arXiv subjects

Damien West

Publications and source records attributed to Damien West.

At least 19 recordsLinked to original sources

arXiv2025

Uncovering the Fourier Structure of Wavefunctions in Semiconductors

Symmetry is at the heart of material properties. Symmetry of the Bravais lattice defines the degeneracy of planewaves, upon which atomic symmetry determines interaction potentials which may lift such degeneracies. This results in wavefunctions which are single planewaves throughout the Brillouin zone (BZ), except in the vicinity of lifted degeneracies. This great simplification allows for determination of optical properties from a handful of planewaves and a single transition. Further, it reveals that nonlinear optical response arises from higher order degeneracy along lines/points in the BZ.

cond-mat.mtrl-sci↗

arXiv2025

Semiconductor-compatible topological digital alloys

Recently, GeSn alloys have attracted much interest for direct-gap infrared photonics and as potential topological materials which are compatible with the semiconductor industry. However, for photonics, the high-Sn content required leads to low detectivity, associated with poor material quality, and the (>35%) Sn required for topological properties have been out of reach experimentally. Here, we demonstrate that by patterning the Sn distribution within Ge, the electronic properties have a far greater tunability than is possible with the random alloy. For the GeSn δ-digital alloy (DA) formed by confining Sn atoms in atomic layer(s) along the [111] direction of Ge, we show that ~10% Sn can lead to a triple-point semimetal. These findings are understood in terms of Sn ordering causing spatial separation of Sn and Ge band edges, leading to band inversion. This mechanism can also lead to a weak topological insulator, Weyl semimetal, and enables tunable direct bandgaps down to 2 meV, covering the entire infrared range. This DA induced topological properties are also identified in compound semiconductors, such as InAs1-xSbx, showing the general applicability of the DA design for realizing topological properties on conventional semiconductor platforms. Our findings not only point to a new class of currently unexplored topological systems accessible by epitaxy, but also establish the promise of low-Sn GeSn DAs for application as infrared laser diodes and photodetectors in Si photonic integrated circuits and infrared image sensors.

cond-mat.mtrl-sci↗

arXiv2024

Bond Dipole based Geometric Theory of Band Alignment

The band alignment (BA) between two materials is a fundamental property that governs the functionality and performance of electronic, as well as electrochemical, devices. However, despite decades of study, the inability to separate surface properties from those of bulk have made a deep understanding of the physics of BA illusive. Building on the theory of ideal vacuum level to separate surface from bulk [CWZ, Phys. Rev. B 103, 235202 (2021)], here we present a geometric theory for the band alignment, particularly, explaining the insensitivity of the alignment to interfacial orientation between isotropic materials. First, we adopt charge neutral polyhedron, termed Wigner-Seitz atoms (WSA), to partition the charge of atoms in a way which maintains crystal symmetry and tessellates the space. In contrast to CWZ theory, the band alignment of two materials constructed from such WSAs is independent of interface orientation. Upon electron relaxation at the interface, here we show that the interfacial charge transfer dipole can be faithfully descibed by the sum of localized point dipoles which exist between atoms at the interface (bond dipoles). For interfaces between isotropic materials, the magnitude of the bond dipole can be factored out as a multiplier, leaving only geometric factors, such as the crystal symmetry and dimension of the material, to determine band alignment, irrespective of the orientation of the interface. We considered 29 distinct interfaces and found that this bond dipole theory yields excellent agreement (RMS deviation < 30 meV) with first-principles results. Our theory can be straightforwardly applied to interface between alloys, as well as between anisotropic systems.

cond-mat.mtrl-sci↗

arXiv2024

Revisiting the Formulation of Charged Defect in Solids

Defect physics is at the heart of microelectronics. By keeping track of the reference energy in total energy calculations, we explicitly show that the "potential alignment" correction vanishes, and the classic Markov-Payne correction yields accurate results. From linear response theory, we further formulate an accurate expression for the quadrupole correction. Application to numerous defects including anisotropic material yields accurate formation energies in small supercells and the historically slow convergence of the 2+ diamond vacancy is shown to be a result of slow varying gap levels of the defect leading to a size dependent dielectric constant.

cond-mat.mtrl-sci↗

arXiv2024

Atomic short-range order: a new degree of freedom for band engineering of GeSn semiconductor alloys

Chemical short-range order (SRO) in alloys denotes the statistical preference or avoidance between atomic species on neighboring lattice sites. Here, we highlight SRO as a powerful new mechanism for semiconductor alloy band engineering. Atom probe tomography reveals a significantly higher probability of Sn-Sn first nearest neighbors (1NNs) in thin-film GeSn alloys grown by molecular beam epitaxy (MBE) vs. chemical vapor deposition (CVD). Remarkably, although lower Sn concentration typically widens the bandgap, we find that the stronger presence of Sn-Sn 1NN pairs in MBE samples overrides this trend, resulting in a narrower bandgap despite having 2 at.\% lower Sn content than CVD samples. First-principles modeling corroborates this effect, attributing these SRO variations to distinctive surface terminations and growth temperatures between MBE and CVD. These findings establish SRO as a new degree of freedom for semiconductor band engineering beyond composition, strain, and quantum confinement, unlocking novel device mechanisms for the post-Moore era.

cond-mat.mtrl-sci↗

arXiv2023

Small polarom formation by electron-electron interaction

In a solid, electrons can be scattered both by phonons and other electrons. First proposed by Landau, scattering by phonons can lead to a composite entity called a polaron, in which a lattice distortion traps an itinerant electron (or hole) such that the distortion and carrier move in unison as a single particle with larger effective mass. While this is the traditional view of polarons, the rise of 2D systems, especially strongly correlated ones, open the prospect of electron scattering taking on a larger role in spontaneous carrier localization for such material systems. Here, we show that in transition metal halides, such electron-electron interactions can lead to polaron formation even in the absence of lattice distortion. This suggests an alternative direction for polaron formation, transport, and control in solids. This new mechanism of polaron formation is confirmed by first-principles calculation of 2D transition metal halides, CrI2, CoCl2 and CoBr2. These theoretical predictions are supported by scanning tunneling microscopy/spectroscopy measurements of polarons in CrI2.

cond-mat.mtrl-sci↗

arXiv2022

Enumeration of Moire Patterns of a Hexagonal Twisted Bilayer and Intercalated Transition Metals in Twisted h-BN

A real-space method using generating integers is used to classify the possible moire patterns for two equal hexagonal lattices. The result is that the rotations that take (n,m) to (m,n) with n,m relatively prime form the fundamental moire transformations, and the number of lattice coincidence areas within each supercell is given by (n-m)^2. The scheme may be extended to cases where the lattice constants differ. Additionally, we consider a system with a transition metal between the layers of a twisted bilayer of h-BN. We find that the lowest energy configurations for such an arrangement are those at aligned and anti-aligned sites of the moire pattern, depending on the transition metal, and the low-symmetry sites possess high magnetization.

physics.comp-ph↗

arXiv2022

Ultrafast Charge Transfer Enhancement in CdS-MoS2 via Linker Molecule

Hybrid systems, which take advantage of low material dimensionality, have great potential for designing nanoscale devices. Quantum dots (QDs) -- a 0D nanostructure -- can be combined with 2D monolayers to achieve success in photovoltaics and photocatalytic water splitting. In such colloidal systems, ligand molecules such as cysteine play an important role in device performance. The role of the ligand molecule in these QD heterostructures is poorly understood. In this study, time-dependent density functional theory (TD-DFT) is employed in order to explore how the ligand affect the charge transfer at the ultra-fast timescale. We study the charge transfer dynamics in CdS-MoS2 heterostructures both with and without an organic linker molecule. We find that the ligand molecule enhances the ultrafast charge transfer, and that electrons are preferentially transferred from CdS to MoS2 as band alignment would predict. The electronic dynamics and time-evolved projection character are sensitive to the ionic temperature and excitation density.

physics.comp-ph↗

arXiv2022

A Universal Description of Workfunction

At the surfaces of materials, the bulk symmetry of the charge density is broken and electron spill-out into the vacuum region creates a surface dipole. Such spill-out has been historically calculated by Lang and Kohn [Phys. Rev. B \textbf{3}, 1215 (1971)] using average electron density to sucessfully explain the workfunction in metals. However, despite its initial success, in the fifty years since it has not been extended beyond simple metals. Here we show that the degree of charge spill-out is largely controlled by the innate bulk workfunction $ϕ_I$, which is the Fermi level position of $\it bulk$ relative to the ideal vacuum. By incorporating the contribution of $ϕ_I$ to the surface dipole we show that Lang-Kohn's $\it jellium$ based approach can be broadly expanded to understand the workfunction over a wide range of metals, semiconductors, and insulators.

cond-mat.mtrl-sci↗

arXiv2022

Manipulating single excess electrons in monolayer transition metal dihalide

Polarons are entities of excess electrons dressed with local response of lattices, whose atomic-scale characterization is essential for understanding the many body physics arising from the electron-lattice entanglement, but yet difficult to achieve. Here, using scanning tunneling microscopy and spectroscopy (STM/STS), we show the visualization and manipulation of single polarons with different origin, i.e., electronic and conventional polarons, in monolayer CoCl2, that are grown on HOPG substrate via molecular beam epitaxy. Four types of polarons are identified, all inducing upward local band bending, but exhibiting distinct appearances, lattice occupations, polaronic states and local lattice distortions. First principles calculations unveil three types of polarons are stabilized by electron-electron interaction. The type-4 polaron, however, are driven by conventional lattice distortions. All the four types of polarons can be created, moved, erased, and moreover interconverted individually by the STM tip, allowing precise control of single polarons unprecedently. This finding identifies the rich category of polarons and their feasibility of manipulation in CoCl2, which can be generalized to other transition metal halides.

cond-mat.mes-hall↗

arXiv2021

Polarization at the Nanoscale

Modern polarization theory yields surface bound charge associated with spontaneous polarization of bulk. However, understanding polarization in nano systems also requires a proper treatment of charge transfer between surface dangling bonds. Here, we develop a real-space approach for total polarization and apply it to wurtzite semiconductors and BaTiO3 perovskite. First-principles calculations utilizing this approach not only yield spontaneous bulk polarization in agreement with Berry phase calculations, but also uncover phenomena specific to nano systems. As an example, we show surface passivation leads to a complete quenching of the piezoelectric effect, which reemerges only at larger length scale and/or spontaneous polarization.

cond-mat.mtrl-sci↗

arXiv2021

Realization of AlSb in the double layer honeycomb structure: a robust new class of two-dimensional material

Exploring new two-dimensional (2D) van der Waals (vdW) systems is at the forefront of materials physics. Here, through molecular beam epitaxy on graphene-covered SiC(0001), we report successful growth of AlSb in the double-layer honeycomb (DLHC) structure, a 2D vdW material which has no direct analogue to its 3D bulk and is predicted kinetically stable when freestanding. The structural morphology and electronic structure of the experimental 2D AlSb are characterized with spectroscopic imaging scanning tunneling microscopy and cross-sectional imaging scanning transmission electron microscopy, which compare well to the proposed DLHC structure. The 2D AlSb exhibits a bandgap of 0.93 eV versus the predicted 1.06 eV, which is substantially smaller than the 1.6 eV of bulk. We also attempt the less-stable InSb DLHC structure; however, it grows into bulk islands instead. The successful growth of a DLHC material here opens the door for the realization of a large family of novel 2D DLHC traditional semiconductors with unique excitonic, topological, and electronic properties.

cond-mat.mtrl-sci↗

arXiv2020

Vector Potential and Surface Magnetic Field in Magnetoelectric Antiferromagnetic Materials

A general formula for the average vector potential of bulk periodic systems is proposed and shown to set the boundary conditions at magnetic interfaces. For antiferromagnetic materials, the study reveals a unique relation between the macroscopic potential and the orientation-dependent magnetic quadrupole, as a result of the different crystalline and magnetic symmetries. In particular, at surfaces and interfaces of a truncated bulk without inversion and time-reversal symmetries, the average vector potential exhibits a discontinuity, which results in an interfacial magnetic field. In general, however, due to the surface and interface electronic and atomic relaxations, additional magnetization may result. For the experimentally-observed magnetoelectric antiferromagnets, in particular, our symmetry analysis suggest that the relaxation effects could well be a system response to the presence of such a potential discontinuity.

cond-mat.mtrl-sci↗

arXiv2020

Epitaxial Growth of Two-dimensional Insulator Monolayer Honeycomb BeO

The emergence of two-dimensional (2D) materials launched a fascinating frontier of flatland electronics. Most crystalline atomic layer materials are based on layered van der Waals materials with weak interlayer bonding, which naturally leads to thermodynamically stable monolayers. We report the synthesis of a 2D insulator comprised of a single atomic sheet of honeycomb structure BeO (h-BeO), although its bulk counterpart has a wurtzite structure. The h-BeO is grown by molecular beam epitaxy (MBE) on Ag(111) thin films that are conveniently grown on Si(111) wafers. Using scanning tunneling microscopy and spectroscopy (STM/S), the honeycomb BeO lattice constant is determined to be 2.65 angstrom with an insulating band gap of 6 eV. Our low energy electron diffraction (LEED) measurements indicate that the h-BeO forms a continuous layer with good crystallinity at the millimeter scale. Moiré pattern analysis shows the BeO honeycomb structure maintains long range phase coherence in atomic registry even across Ag steps. We find that the interaction between the h-BeO layer and the Ag(111) substrate is weak by using STS and complimentary density functional theory calculations. We not only demonstrate the feasibility of growing h-BeO monolayers by MBE, but also illustrate that the large-scale growth, weak substrate interactions, and long-range crystallinity make h-BeO an attractive candidate for future technological applications. More significantly, the ability to create a stable single crystalline atomic sheet without a bulk layered counterpart is an intriguing approach to tailoring novel 2D electronic materials.

cond-mat.mes-hall↗

arXiv2020

Uncovering vacuum level in infinite solid by real-space potential-unfolding

Although real materials are finite in size, electronic structure theory is built on the assumption of infinitely large solid, which led to a longstanding controversy: where is the vacuum level? Here, we introduce an analytic real-space potential-unfolding approach to uncover the vacuum level in infinitely large solid. First-principles calculations show that, in the absence of a physical surface, the bulk band structure, often measured with respect to an average bulk potential, is offset by a hereto unknown and orientation-dependent bulk quadrupole with respect to the vacuum level. By identifying intrinsic contributions of a bulk solid to its surface and interface properties, our theory eliminates the ambiguities surrounding the physical origin of the band alignment between matters.

cond-mat.mtrl-sci↗

arXiv2018

Electronic Fingerprints of Cr and V Dopants in Topological Insulator Sb2Te3

By combining scanning tunneling microscopy/spectroscopy and first-principles calculations, we systematically study the local electronic states of magnetic dopants V and Cr in the topological insulator (TI) Sb2Te3. Spectroscopic imaging shows diverse local defect states between Cr and V, which agree with our first-principle calculations. The unique spectroscopic features of V and Cr dopants provide electronic fingerprints for the co-doped magnetic TI samples with the enhanced quantum anomalous Hall effect. Our results also facilitate the exploration of the underlying mechanism of the enhanced quantum anomalous Hall temperature in Cr/V co-doped TIs.

cond-mat.str-el↗

arXiv2018

Enhanced Light Emission from the Ridge of Two-dimensional InSe Flakes

InSe, a newly rediscovered two-dimensional (2D) semiconductor, possesses superior electrical and optical properties as a direct bandgap semiconductor with high mobility from bulk to atomically thin layers, drastically different from transition metal dichalcogenides (TMDCs) in which the direct bandgap only exists at the single layer limit. However, absorption in InSe is mostly dominated by an out-of-plane dipole contribution which results in the limited absorption of normally incident light which can only excite the in-plane dipole at resonance. To address this challenge, we have explored a unique geometric ridge state of the 2D flake without compromising the sample quality. We observed the enhanced absorption at the ridge over a broad range of excitation frequencies from photocurrent and photoluminescence (PL) measurements. In addition, we have discovered new PL peaks at low temperature due to defect states on the ridge, which can be as much as ~ 60 times stronger than the intrinsic PL peak of InSe. Interestingly, the PL of the defects is highly tunable through an external electrical field, which can be attributed to the Stark effect of the localized defects. InSe ridges thus provide new avenues for manipulating light-matter interaction and defect-engineering which are vitally crucial for novel optoelectronic devices based on 2D semiconductors.

cond-mat.mes-hall↗

arXiv2017

Built-in potential and band alignment of matter

The built-in potential is the interfacial potential difference due to electric dipole at the interface of two dissimilar materials. It is of central importance to the understanding of many phenomena in electrochemistry, electrical engineering, and materials science because it determines the band alignment at the interfaces. Despite its importance, its exact sign and magnitude have generally been recognized as an ill-defined quantity for more than half a century. Here, we provide a universal definition of the built-in potential. Furthermore, the built-in potential is explicitly determined by the bulk (i.e., innate) properties of the constituent materials when the system is in electronic equilibrium, while the interface plays a role only in the absence of equilibrium. Our quantitative theory enables a unified description of a variety of important properties in all types of interfaces, ranging from work functions and Schottky barriers in electronic devices to open circuit voltages and electrode potentials in electrochemical cells.

cond-mat.mtrl-sci↗