arXiv subjects

Daming Tian

Publications and source records attributed to Daming Tian.

3 recordsLinked to original sources

arXiv2025

Competition between Weak Localization and Antilocalization of Dirac-like Fermions in a Spin-Polarized Two-Dimensional Electron Gas at KTaO3 (111) Interface

Quantum transport phenomena in two-dimensional electron gases (2DEGs) at oxide interfaces have garnered significant interest owing to their potential in spintronic and quantum information technologies. Here, we systematically investigate the quantum conductance corrections of spin-polarized 2DEGs formed at the interfaces between two insulating oxides, ferromagnetic EuTiO3 (ETO) films and (111)-oriented KTaO3 (KTO) substrates. The anomalous Hall effect and hysteretic magnetoresistance provide clear evidence for long-range ferromagnetic order in the 2DEGs, which could be attributed to interfacial Eu doping in combination with the magnetic proximity effect of the ETO layer. The breaking of time-reversal symmetry by ferromagnetism in the 2DEGs, and with the assistance of spin-orbit coupling effect, gives rise to a nontrivial Berry phase. This results in a competition between weak localization (WL) and weak antilocalization (WAL) in the quantum transport of Dirac-like fermions at the KTO (111) interfaces. Notably, this competitive behavior can be effectively tuned by optical gating via a photoexcitation-induced shift of the Fermi level. Our findings demonstrate a controllable platform based on spin-polarized oxide 2DEGs for quantum transport, opening new avenues for spin-orbitronic and topological electronic applications.

cond-mat.str-el↗

arXiv2025

Light-Induced Giant Enhancement of the Nonlinear Hall Effect in Two-Dimensional Electron Gases at KTaO3 (111) Interfaces

The nonlinear Hall effect (NLHE), an emergent phenomenon in noncentrosymmetric systems, enables the generation of a transverse voltage without an external magnetic field through a second-order electrical response. However, achieving a sizable NLHE signal remains a critical challenge for its application in frequency-doubling and rectifying devices. Here, we report a light-induced giant enhancement of the NLHE in the two-dimensional electron gas (2DEG) at the CaZrO3/KTaO3 (111) interface. Under light illumination, the second harmonic Hall voltage (V2{\omega} y) increases substantially and undergoes a sign reversal. Correspondingly,the second-order transverse conductivity increases by nearly five orders of magnitude, reaching 2.4 um V-1 omega-1, while also reversing its sign. Scaling analysis indicates that skew scattering is the dominant mechanism underlying the NLHE and is highly tunable via optical gating. Photoexcitation pumps electrons from in-gap states into the higher-lying Ta 5d conduction band, generating high-mobility photocarriers that significantly increase the cubic transport scattering time, thereby driving a dramatic enhancement of {\sigma}(2) yxx. First-principles calculations further reveal that the Berry curvature distribution on the Fermi surface strongly depends on band filling. As the Fermi level approaches a band crossing in the Ta 5d subband near the M point, the Berry curvature triple undergoes a sign change, accounting for the experimentally observed sign reversal of the nonlinear Hall response. Our work offers a new strategy to optically boost and tune the nonlinear Hall effect in oxide 2DEG systems, paving the way for applications in light-controlled rectification and nonlinear electronic devices.

cond-mat.mes-hall↗

arXiv2025

Two-Dimensional Superconductivity at the CaZrO3/KTaO3 (001) Heterointerfaces

Two-dimensional superconductivity at KTaO3 (KTO) heterointerfaces has sparked intensive investigations since its discovery, yet whether the (001)-oriented KTO interface hosts superconductivity remains to be elucidated. Here, we provide unambiguous evidence of superconductivity in two-dimensional electron gases (2DEGs) at CaZrO3/KTO(001) heterointerfaces, with a superconducting transition TC up to ~0.25 K. Notably, TC increases linearly with carrier density nS over the range of 4.5*10^13~10.3*10^13 cm^-2. Furthermore, superconductivity exhibits a pronounced dependence on crystallographic orientation, with TC rising from 0.25 K for (001) to 1.04 K for (110) and 2.22 K for (111), underscoring the crucial role of interfacial symmetry in the CaZrO3/KTO system. The two-dimensional nature of the superconducting state is corroborated by the Berezinskii-Kosterlitz-Thouless (BKT) transition and the large anisotropy of the upper critical field. For the CaZrO3/KTO(001) sample with nS=7.7*10^13 cm^-2, the estimated Ginzburg-Landau coherence length {\xi}GL=146.4 nm is larger than the superconducting layer thickness dSC=10.1 nm by a factor of ~14.5, confirming significant two-dimensional confinement of the CaZrO3/KTO(001) superconductor. In addition, we demonstrate that the two-dimensional superconductivity at the CaZrO3/KTO(001) interface can be effectively tuned by applying a back gate voltage. Our findings reveal the existence of two-dimensional superconductivity at CaZrO3/KTO(001), providing a new platform for exploring two-dimensional superconductivity at oxide interfaces.

cond-mat.supr-con↗