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Damir Dominko

Publications and source records attributed to Damir Dominko.

2 recordsLinked to original sources

Spin-Reorientation-Driven Linear Magnetoelectric Effect in Topological Antiferromagnet Cu$_3$TeO$_6$

The search for new materials for energy-efficient electronic devices has gained unprecedented importance. Among the various classes of magnetic materials driving this search are antiferromagnets, magnetoelectrics, and systems with topological spin excitations. Cu$_3$TeO$_6$ is a material that belongs to all three of these classes. Combining static electric polarization and magnetic torque measurements with phenomenological simulations we demonstrate that magnetic-field-induced spin reorientation needs to be taken into account to understand the linear magnetoelectric (ME) effect in Cu$_3$TeO$_6$. Our calculations reveal that the magnetic field pushes the system from the nonpolar ground state to the polar magnetic structures. However, nonpolar structures only weakly differing from the obtained polar ones exist due to the weak effect that the field-induced breaking of some symmetries has on the calculated structures. Among those symmetries is the $PT$ ($\overline{1}'$) symmetry, preserved for Dirac points found in Cu$_3$TeO$_6$. Our findings establish Cu$_3$TeO$_6$ as a promising playground to study the interplay of spintronics-related phenomena.

cond-mat.str-el

Persisting correlation between electrical transport and magnetic dynamics in M-type hexaferrites

In this work we present frequency-dependent magnetic susceptibility and dc electric transport properties of three different compositions of hexaferrite Ba$_{1-x}$Pb$_{x}$Fe$_{12-y}$Al$_{y}$O$_{19}$. We find a correlation between activation energies of dc electric transport and ac magnetic susceptibility which persists in the whole researched range of aluminium substitution $x=0$ to $3.3$. This result is discussed in the context of charged magnetic domain walls, the pinning of which is determined by charge carriers activated over the transport gap. Our work points toward a general relaxational mechanism in ferrimagnetic semiconductors which directly affects dynamic magnetic properties via electric transport.

cond-mat.str-el