arXiv subjects

Dan Csontos

Publications and source records attributed to Dan Csontos.

4 recordsLinked to original sources

arXiv2007

Spin polarization control by electric field gradients

We show that the propagation of spin polarized carriers may be dramatically affected by {\em inhomogeneous} electric fields. Surprisingly, the spin diffusion length is found to strongly depend on the sign and magnitude of electric field \emph{gradients}, in addition to the previously reported dependence on the sign and magnitude of the electric field [Yu & Flatté, Phys. Rev. B {\bf 66}, 201202(R) 2002; {\em ibid.} {\bf 66}, 235302 (2002)]. This indicates that purely electrical effects may play a crucial role in spin polarized injection, transport and detection in semiconductor spintronics. A generalized drift-diffusion equation that describes our findings is derived and verified by numerical calculations using the Boltzmann transport equation.

cond-mat.mtrl-sci↗

arXiv2006

Strong spin relaxation length dependence on electric field gradients

We discuss the influence of electrical effects on spin transport, and in particular the propagation and relaxation of spin polarized electrons in the presence of inhomogeneous electric fields. We show that the spin relaxation length strongly depends on electric field gradients, and that significant suppression of electron spin polarization can occur as a result thereof. A discussion in terms of a drift-diffusion picture, and self-consistent numerical calculations based on a Boltzmann-Poisson approach shows that the spin relaxation length in fact can be of the order of the charge screening length.

cond-mat.mes-hall↗

arXiv2005

Crossover from diffusive to ballistic transport in semiconductor nanostructures

We present a detailed microscopic study of quasi-ballistic transport in deep submicron semiconductor channels. In particular, we study the crossover between the diffusive and ballistic regimes of transport and identify signatures in the electrostatic response, electron density, and nonequilibrium electron distribution function that are due to ballistic and diffusive transport, respectively. Our theoretical and computational approach is based on the Boltzmann transport equation for a nondegenerate electron system, together with the Poisson equation, from which we obtain the nonequilibrium electron distribution in a self-consistent way.

cond-mat.mtrl-sci↗

arXiv2005

Spin injection and accumulation in inhomogeneous semiconductors

We present a study of spin transport in charge and spin inhomogeneous semiconductor systems. In particular, we investigate the propagation of spin-polarized electrons through a boundary between two semiconductor regions with different doping concentrations. We use a theoretical and numerical method, presented in this paper, based on a self-consistent treatment of a two-component version of the Boltzmann transport equation. We show that space-charge effects strongly influence the spin transport properties, in particular giving rise to pronounced spin accumulation and spin density enhancement.

cond-mat.mtrl-sci↗