arXiv subjects

Dan Dessau

Publications and source records attributed to Dan Dessau.

6 recordsLinked to original sources

arXiv2022

Experimental electronic structure of the electrically switchable antiferromagnet CuMnAs

Tetragonal CuMnAs is a room temperature antiferromagnet with an electrically reorientable Néel vector and a Dirac semimetal candidate. Direct measurements of the electronic structure of single-crystalline thin films of tetragonal CuMnAs using angle-resolved photoemission spectroscopy (ARPES) are reported, including Fermi surfaces (FS) and energy-wavevector dispersions. After correcting for a chemical potential shift of $\approx-390$ meV (hole doping), there is excellent agreement of FS, orbital character of bands, and Fermi velocities between the experiment and density functional theory calculations. Additionally, 2x1 surface reconstructions are found in the low energy electron diffraction (LEED) and ARPES. This work underscores the need to control the chemical potential in tetragonal CuMnAs to enable the exploration and exploitation of the Dirac fermions with tunable masses, which are predicted to be above the chemical potential in the present samples.

cond-mat.mtrl-sci↗

arXiv2021

Growth, characterization and Chern insulator state in MnBi$_2$Te$_4$ via the chemical vapor transport method

As the first intrinsic antiferromagnetic topological insulator, MnBi$_2$Te$_4$ has provided a platform to investigate the interplay of band topology and magnetism as well as the emergent phenomena arising from such an interplay. Here we report the chemical-vapor-transport (CVT) growth and characterization of MnBi$_2$Te$_4$, as well as the observation of the field-induced quantized Hall conductance in 6-layer devices. Through comparative studies between our CVT-grown and flux-grown MnBi$_2$Te$_4$ via magnetic, transport, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy measurements, we find that CVT-grown MnBi$_2$Te$_4$ is marked with higher Mn occupancy on the Mn site, slightly higher Mn$_{\rm{Bi}}$ antisites, smaller carrier concentration and a Fermi level closer to the Dirac point. Furthermore, a 6-layer device made from the CVT-grown sample shows by far the highest mobility of 2500 cm$^2$V$\cdot$s in MnBi$_2$Te$_4$ devices with the quantized Hall conductance appearing at 1.8 K and 8 T. Our study provides a new route to obtain high-quality single crystals of MnBi$_2$Te$_4$ that are promising to make superior devices and realize emergent phenomena, such as the layer Hall effect and quantized anomalous hall effect, etc.

cond-mat.mtrl-sci↗

arXiv2021

Realization of an intrinsic, ferromagnetic topological state in MnBi8Te13

The interplay between topology and magnetism is essential for realizing novel topological states including the axion insulator, the magnetic Weyl semimetal, etc. An intrinsically ferromagnetic topological material with only the topological bands at the charge neutrality energy has so far remained elusive. By rationally designing the natural heterostructure consisting of [MnBi2Te4] septuple layers and [Bi2Te3] quintuple layers, we report MnBi8Te13 as the first intrinsic ferromagnetic topological material with clean low-energy band structure. Based on the thermodynamic, transport and neutron diffraction measurements, our data show that despite the adjacent [MnBi2Te4] being 44.1 Å apart, MnBi8Te13 manifests long-range ferromagnetism below 10.5 K with strong coupling between magnetism and charge carriers. Our first-principles calculations and angle-resolved photoemission spectroscopy measurements further demonstrate that MnBi8Te13 is an intrinsic ferromagnetic axion state. Therefore, MnBi8Te13 serves as an ideal system to investigate rich emergent phenomena, including the quantized anomalous Hall effect and quantized topological magnetoelectric effect.

cond-mat.str-el↗

arXiv2019

Strongly Gapped Topological Surface States on Protected Surfaces of Antiferromagnetic MnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$

The search for materials to support the Quantum Anomalous Hall Effect (QAHE) have recently centered on intrinsic magnetic topological insulators (MTIs) including MnBi$_2$Te$_4$ or heterostructures made up of MnBi$_2$Te$_4$ and Bi$_2$Te$_3$. While MnBi$_2$Te$_4$ is itself a MTI, most recent ARPES experiments indicate that the surface states on this material lack the mass gap that is expected from the magnetism-induced time-reversal symmetry breaking (TRSB), with the absence of this mass gap likely due to surface magnetic disorder. Here, utilizing small-spot ARPES scanned across the surfaces of MnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$, we show the presence of large mass gaps (~ 100 meV scale) on both of these materials when the MnBi$_2$Te$_4$ surfaces are buried below one layer of Bi$_2$Te$_3$ that apparently protects the magnetic order, but not when the MnBi$_2$Te$_4$ surfaces are exposed at the surface or are buried below two Bi$_2$Te$_3$ layers. This makes both MnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$ excellent candidates for supporting the QAHE, especially if bulk devices can be fabricated with a single continuous Bi$_2$Te$_3$ layer at the surface.

cond-mat.str-el↗

arXiv2019

A van der Waals antiferromagnetic topological insulator with weak interlayer magnetic coupling

Magnetic topological insulators (TI) provide an important material platform to explore quantum phenomena such as quantized anomalous Hall (QAH) effect and Majorana modes, etc. Their successful material realization is thus essential for our fundamental understanding and potential technical revolutions. By realizing a bulk van der Waals material MnBi4Te7 with alternating septuple [MnBi2Te4] and quintuple [Bi2Te3] layers, we show that it is ferromagnetic in plane but antiferromagnetic along the c axis with an out-of-plane saturation field of ~ 0.22 T at 2 K. Our angle-resolved photoemission spectroscopy measurements and first-principles calculations further demonstrate that MnBi4Te7 is a Z2 antiferromagnetic TI with two types of surface states associated with the [MnBi2Te4] or [Bi2Te3] termination, respectively. Additionally, its superlattice nature may make various heterostructures of [MnBi2Te4] and [Bi2Te3] layers possible by exfoliation. Therefore, the low saturation field and the superlattice nature of MnBi4Te7 make it an ideal system to investigate rich emergent phenomena.

cond-mat.mtrl-sci↗

arXiv2019

Non-trivial topology in a layered Dirac nodal-line semimetal candidate SrZnSb$_2$ with distorted Sb square nets

Dirac states hosted by Sb/Bi square nets are known to exist in the layered antiferromagnetic AMnX$_2$ (A = Ca/Sr/Ba/Eu/Yb, X=Sb/Bi) material family the space group to be P4/nmm or I4/mmm. In this paper, we present a comprehensive study of quantum transport behaviors, angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations on SrZnSb2, a nonmagnetic analogue to AMnX2, which crystallizes in the pnma space group with distorted square nets. From the quantum oscillation measurements up to 35 T, three major frequencies including F$_1$ = 103 T, F$_2$ = 127 T and F$_3$ = 160 T, are identified. The effective masses of the quasiparticles associated with these frequencies are extracted, namely, m*$_1$ = 0.1 m$_e$, m*$_2$ = 0.1 m$_e$ and m*$_3$ = 0.09m$_e$, where m$_e$ is the free electron mass. From the three-band Lifshitz-Kosevich fit, the Berry phases accumulated along the cyclotron orbit of the quasiparticles are 0.06$π$, 1.2$π$ and 0.74$π$ for F$_1$, F$_2$ and F$_3$, respectively. Combined with the ARPES data and the first-principles calculations, we reveal that F2 and F3 are associated with the two nontrivial Fermi pockets at the Brillouin zone edge while F1 is associated with the trivial Fermi pocket at the zone center. In addition, the first-principles calculations further suggest the existence of Dirac nodal line in the band structure of SrZnSb$_2$.

cond-mat.mtrl-sci↗