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Dangli Gao

Publications and source records attributed to Dangli Gao.

3 recordsLinked to original sources

Modulating anomalous thermal quenching behavior of stimulation luminescence via high-orbit electronic satellite-stabilized Trap state in germanate-based phosphors for 5D optical data storage

Persistent luminescence (PersL) materials, widely used in emergency lighting and information storage, are primarily employed at room temperature. However, their luminescent performance deteriorates sharply at high temperatures. Herein, a serials of Mg2GeO4:Ti4+,Ln3+ (Ln = Tb, Eu) phosphors demonstrated anomalous thermal quenching PersL due to the temperature-dependent Fermi-Dirac distribution of bound charge carriers of Ti4+Mg2+ as remote electron traps and VMg2+ as hole traps. The high carrier retention rate of phosphors is attributed to the ability of Ti4+Mg2+ positive charge center to strongly trap non-bonding electrons over a long range (about 20 angstroms) as the electronic satellite for its stable operation. Under external optical/thermal stimulation, the released electrons and holes recombine at the different luminescent levels of Tb3+, resulting in the emission of different PersL branching ratios. Using these phosphors, we have developed 5D optical data storage (2D plane + trap depth + temperature + time) and the encrypted engine program for high-temperature aerospace engines. This study reveals the energy storage process of long-range trapping and releasing electrons by Ti4+ electron traps, and provides a new design concept for the design of PersL materials.

physics.optics

Controllable Thermo-Stimulated Luminescence in Niobate Persistent Phosphor by Constructing the Photovoltaic/Electrolytic Cell for Remote Intelligent Anti-Counterfeiting

Persistent luminescence (PersL) carrying remote key information plays a crucial role for intelligent anti-counterfeiting applications. However, the weak PersL intensity accompanied by uncontrollability limits their practical application. Here we develop LiNbO3 (LNO):Pr,Bi phosphor with enhanced red PersL by trace doping Sm3+. The LNO:Pr,Bi,Sm phosphor exhibits quadruplet luminescence, including polychrome photoluminescence, PersL, and photo/thermo-stimulated luminescence (PSL/TSL). Particularly, the enhanced TSL can carry remote subjective information independent of the phosphor itself by controlling the temperature. A mechanism of afterglow enhancement is proposed based on constructing reversible photovoltaic cells and electrolytic cells by photothermal redox reactions using Bi3+ + VO and Bi3+/Pr3+ + VLi' ion pair. This study has sparked the exploration of designing the information storage PersL materials for more sophisticated remote intelligent anti-counterfeiting.

physics.optics

High-Throughput Information Storage in An Intelligent Response Phosphor

Persistent phosphor has emerged as a promising candidate for information storage due to the rapid accessibility and low-energy requirements. However, the low storage capacity has limited its practical application. Herein, we skillfully designed and developed NaGdGeO4:Pb2+,Tb3+ stimulated phosphor by trace doped Sm3+. As expected, this phosphor demonstrates the larger carrier capacity than traditional commercial SrAl2O4:Eu2+,Dy3+ phosphors and super-strong thermo-stimulated luminescence (TSL) that is three times greater than its photoluminescence (PL) intensity (PL efficiency: 17.3%). A mechanism of the enhanced and controllable TSL is proposed based on electron-hole defect pair structure. We further present a high-throughput optical data recording in five dimensions in a single fluorescent film recording layer. The findings described here provides not only a universal approach for construction TSL materials, but also a new paradigm for future generation optical storage technology.

physics.optics