arXiv subjects

Daniel A. Mayoh

Publications and source records attributed to Daniel A. Mayoh.

5 recordsLinked to original sources

arXiv2026

Antiferroquadrupolar Order in Altermagnetic CoF$_2$

Altermagnets host non-relativistic spin-split electronic states whose microscopic origin is theoretically linked to a hidden charge order, yet experimental studies of this charge order are limited. We therefore investigate charge order within CoF$_2$, a $d$-wave altermagnetic compound with a rutile crystal structure and $Γ$-point antiferromagnetism. Combining resonant elastic X-ray scattering, symmetry analysis and ab initio calculations, we directly observe charge ordering and identify it as antiferroquadrupolar in nature. Via electronic structure calculations, we show that the experimentally observed antiferroquadrupolar order gives rise to the characteristic altermagnetic spin-splitting, thereby establishing empirical evidence for the decomposition of the altermagnetic order parameter into magnetic and charge degrees of freedom. We hence demonstrate that antiferroquadrupolar order is the microscopic origin of altermagnetism in CoF$_2$, with implications to the wider family of rutile altermagnets. Furthermore, our approach is applicable to studying altermagnetism in general, having demonstrated that resonant elastic X-ray scattering can serve as a direct probe of the charge multipoles that underpin spin-split electronic states in these materials.

cond-mat.str-el↗

arXiv2026

Magnetic switching of exciton lifetime in CrSBr

Exciton dynamics in layered magnetic semiconductors provide a sensitive probe of the interplay between spin order and light-matter interaction. Here, we study thin CrSBr layers using time-resolved photoluminescence spectroscopy in an external magnetic field, revealing a step-like reduction in the exciton lifetime from 11 to 7 ps, during the magnetization flip from the antiferromagnetic to the ferromagnetic phase. The reduction of the exciton lifetime in the ferromagnetic phase persists below the Néel temperature, as evidenced by its strong magnetic-field dependence that disappears in the paramagnetic phase. Ab initio calculations reveal a one-dimensional nature of free excitons accompanied by a pronounced change in the oscillator strength across the magnetic phase transition predicting a shorter radiative lifetime of free excitons in the antiferromagnetic phase of CrSBr contradicting the experimental observations. This discrepancy is explained by strong localization of excitons at low tempature. We show both experimentally and theoretically that the observed magnetic switching of the exciton lifetime is attributed to a larger exciton localization volume leading to a larger oscillator strength in the ferromagnetic phase. The results show that disorder-induced localization effects play a key role in exciton dynamics in CrSBr.

cond-mat.mes-hall↗

arXiv2026

Long-range magnetic interactions in Nd$_2$PdSi$_3$ and the formation of skyrmion phases in centrosymmetric metals

We present an extensive X-ray and neutron scattering study of the structure and magnetic excitations of Nd$_2$PdSi$_3$, a sister compound of Gd$_2$PdSi$_3$ which was recently found to host a skyrmion lattice phase despite its centrosymmetric crystal structure. Dispersive magnetic excitations were measured throughout the Brillouin zone and modeled to determine the magnetic interactions between Nd ions. Our analysis reveals that the magnetic interactions in this system extend over large distances and are significantly affected by a crystallographic superstructure formed by ordering of the Pd and Si atoms. The results suggest that the mechanism for the skyrmion phase formation in this family of materials, specifically Gd$_2$PdSi$_3$, is through the long-range RKKY interactions rather than short-range triangular-lattice frustration.

cond-mat.str-el↗

arXiv2024

Role of native point defects and Hg impurities in the electronic properties of Bi$_4$I$_4$

We studied the effects of point defects and Hg impurities in the electronic properties of bismuth iodide (Bi$_4$I$_4$). Our transport measurements after annealing at different temperatures show that the resistivity of Bi$_4$I$_4$ depends on its thermal history, suggesting that the formation of native defects and impurities can shape the temperature dependence of electrical resistivity. Our density functional theory calculations indicate that the bismuth and iodine antisites, and bismuth vacancies are the dominant native point defects. We find that bismuth antisites introduce resonant states in the band-edges, while iodine antisites and bismuth vacancies lead to a $n$-type and $p$-type doping of Bi$_4$I$_4$, respectively. The Hg impurities are likely to be found at Bi substitutional sites, giving rise to the $p$-type doping of Bi$_4$I$_4$. Overall, our findings indicate that the presence of native point defects and impurities can significantly modify the electronic properties, and, thus, impact the resistivity profile of Bi$_4$I$_4$ due to modifications in the amount and type of carriers, and the associated defect(impurity) scattering. Our results suggest possible routes for pursuing fine-tuning of the electronic properties of quasi-one-dimensional quantum materials.

cond-mat.mtrl-sci↗

arXiv2023

Direct evidence from high-field magnetotransport for a dramatic change of quasiparticle character in van der Waals ferromagnet Fe$_{3-x}$GeTe$_2$

Magnetometry and magnetoresistance (MR) data taken on the van der Waals ferromagnet Fe$_{3-x}$GeTe$_2$ (FGT) reveal three distinct contributions to the MR: a linear negative component, a contribution from closed Fermi-surface orbits, and a $H^2$ enhancement linked to a non-coplanar spin arrangement. Contrary to earlier studies on FGT, by accounting for the field dependence of the anomalous Hall effect, we find that the ordinary Hall coefficient decreases markedly below 80 K, indicating a significant change in character of the electrons and holes on the Fermi surface at this temperature. The resulting altered ground state eventually causes the Hall coefficient to reverse sign at 35 K. Our Hall data support the proposal that Kondo-lattice behavior develops in this $d$-electron material below 80 K. Additional evidence comes from the negative linear component of the MR, which arises from electron-magnon scattering with an atypical temperature dependence attributable to the onset of Kondo screening.

cond-mat.str-el↗