arXiv subjects

Daniel Dunmore

Publications and source records attributed to Daniel Dunmore.

3 recordsLinked to original sources

arXiv2026

Lusztig-Vogan categories of equal rank 2

Lusztig-Vogan categories are categorifications of the principal block of the Lusztig-Vogan module over the Hecke algebra, which captures information about characters of irreducible admissible representations of a real reductive group. Lusztig-Vogan categories can be constructed as module categories over Soergel bimodules. In this paper, we describe the structure of the rank 2 Lusztig-Vogan categories corresponding to equal rank real groups. More precisely, we classify indecomposable objects and describe the action of generating Soergel bimodules, recovering the $W$-graph of the underlying Lusztig-Vogan module. We also provide an algorithm which completes this procedure for arbitrary finite rank Lusztig-Vogan categories, including those which do not correspond to a real reductive group.

math.RT↗

arXiv2025

Enhancement of Electric Drive in Silicon Quantum Dots with Electric Quadrupole Spin Resonance

Quantum computation with electron spin qubits requires coherent and efficient manipulation of these spins, typically accomplished through the application of alternating magnetic or electric fields for electron spin resonance (ESR). In particular, electrical driving allows us to apply localized fields on the electrons, which benefits scale-up architectures. However, we have found that Electric Dipole Spin Resonance (EDSR) is insufficient for modeling the Rabi behavior in recent experimental studies. Therefore, we propose that the electron spin is being driven by a new method of electric spin qubit control which generalizes the spin dynamics by taking into account a quadrupolar contribution of the quantum dot: electric quadrupole spin resonance (EQSR). In this work, we explore the electric quadrupole driving of a quantum dot in silicon, specifically examining the cases of 5 and 13 electron occupancies.

cond-mat.mes-hall↗

arXiv2023

Bounds to electron spin qubit variability for scalable CMOS architectures

Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact upon qubit performance. We chart the spin qubit variability due to the unavoidable atomic-scale roughness of the Si/SiO$_2$ interface, compiling experiments in 12 devices, and developing theoretical tools to analyse these results. Atomistic tight binding and path integral Monte Carlo methods are adapted for describing fluctuations in devices with millions of atoms by directly analysing their wavefunctions and electron paths instead of their energy spectra. We correlate the effect of roughness with the variability in qubit position, deformation, valley splitting, valley phase, spin-orbit coupling and exchange coupling. These variabilities are found to be bounded and lie within the tolerances for scalable architectures for quantum computing as long as robust control methods are incorporated.

quant-ph↗