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Daniel Gruss

Publications and source records attributed to Daniel Gruss.

38 records · Page 3Linked to original sources

Flush+Flush: A Fast and Stealthy Cache Attack

Research on cache attacks has shown that CPU caches leak significant information. Proposed detection mechanisms assume that all cache attacks cause more cache hits and cache misses than benign applications and use hardware performance counters for detection. In this article, we show that this assumption does not hold by developing a novel attack technique: the Flush+Flush attack. The Flush+Flush attack only relies on the execution time of the flush instruction, which depends on whether data is cached or not. Flush+Flush does not make any memory accesses, contrary to any other cache attack. Thus, it causes no cache misses at all and the number of cache hits is reduced to a minimum due to the constant cache flushes. Therefore, Flush+Flush attacks are stealthy, i.e., the spy process cannot be detected based on cache hits and misses, or state-of-the-art detection mechanisms. The Flush+Flush attack runs in a higher frequency and thus is faster than any existing cache attack. With 496 KB/s in a cross-core covert channel it is 6.7 times faster than any previously published cache covert channel.

cs.CR↗

Interaction-induced conducting-nonconducting transition of ultra-cold atoms in 1D optical lattices

The study of time-dependent, many-body transport phenomena is increasingly within reach of ultra-cold atom experiments. We show that the introduction of spatially inhomogeneous interactions, e.g., generated by optically-controlled collisions, induce negative differential conductance in the transport of atoms in 1D optical lattices. Specifically, we simulate the dynamics of interacting fermionic atoms via a micro-canonical transport formalism within both mean-field and a higher-order approximation, as well as with time-dependent DMRG. For weakly repulsive interactions, a quasi steady-state atomic current develops that is similar to the situation occurring for electronic systems subject to an external voltage bias. At the mean-field level, we find that this atomic current is robust against the details of how the interaction is switched on. Further, a conducting-to-nonconducting transition exists when the interaction imbalance exceeds some threshold from both our approximate and time-dependent DMRG simulations. This transition is preceded by the atomic equivalent of negative differential conductivity observed in transport across solid-state structures.

cond-mat.quant-gas↗