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Daniel Klawson

Publications and source records attributed to Daniel Klawson.

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Zero-change foundry compatible silicon photonics MEMS optical switch

Large-scale photonic switches are emerging as essential devices for energy-efficient optical interconnect in data centers and AI/ML clusters as a key enabler for high-bandwidth and low-latency connectivity. Combining micro-electro-mechanical (MEMS) based mechanical reconfigurability with silicon photonic integrated circuits can enable a large-scale, low-loss, programmable platform required for large-scale optical circuit switches. We demonstrate a broadband silicon photonics MEMS switch with more than 30 dB extinction ratio operating in C-band using a zero-change foundry-compatible process and Back-end-of-Line (BEOL) post-processing. The optical switch element exhibits an insertion loss of less than 1.5 dB with a low static power consumption of approx 20 nW at maximum actuation voltage. Our results illustrate that MEMS-based silicon photonics modulators and phase shifters can be used alongside standard silicon photonics components seamlessly in scenarios where performance in terms of footprint, extinction ratio, broad bandwidth, and low-loss operation is of paramount importance.

physics.optics

A broadband, individually addressing two- and three-dimensional photonic integrated circuit for trapped-ion qubit control

Trapped ions provide a high-fidelity platform for quantum information processing, yet delivery of multiple, distinct wavelengths across large networks of interaction zones remains a bottleneck. Conventional free-space light delivery lacks scalability, while on-chip grating couplers suffer from narrow operational bandwidth that increases circuit footprint and optical interfacing complexity. Here we show a broadband photonic integrated circuit capable of addressing individual ions. The circuit combines a planar waveguide lens with a micromirror fabricated using two-photon polymerization at wafer scale. This implementation can address three individual ions from $\lambda$ = 405 - 880 nm with -27 dB average intensity crosstalk at $5\,\mu\mathrm{m}$ pitch. We trap $^{40}\mathrm{Ca}^{+}$ and $^{138}\mathrm{Ba}^{+}$ ions above such devices, characterize optical crosstalk with barium ions, and demonstrate individual repumping of calcium ions. This monolithic photonic architecture brings broadband addressing in an on-chip modality to trapped-ion technology. More generally, integrating additive manufacturing into quantum devices is poised to unlock expanded design space for implementing novel quantum architectures.

quant-ph