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Daniel Loss

Publications and source records attributed to Daniel Loss.

At least 163 records · Page 9Linked to original sources

Surface charge theorem and topological constraints for edge states: An analytical study of one-dimensional nearest-neighbor tight-binding models

For a wide class of noninteracting tight-binding models in one dimension we present an analytical solution for all scattering and edge states on a half-infinite system. Without assuming any symmetry constraints we consider models with nearest-neighbor hoppings and one orbital per site but arbitrary size of the unit cell and generic modulations of on-site potentials and hoppings. The solutions are parametrized by determinants which can be calculated from recursion relations. This representation allows for an elegant analytic continuation to complex quasimomentum consistent with previous treatments for continuum models. Two important analytical results are obtained: (1) An explicit proof of the surface charge theorem is presented including a unique relationship between the boundary charge $Q_B^{(α)}$ of a single band $α$ and the bulk polarization in terms of the Zak-Berry phase with no unknown integer left. This establishes a precise form of a bulk-boundary correspondence relating the {\it boundary charge of a single band} to bulk properties. (2) We derive a topological constraint for the phase-dependence of the edge state energies, where the phase variable describes a continuous shift of the lattice towards the boundary. The topological constraint is shown to be equivalent to the quantization of a topological index $I=ΔQ_B-\barρ\in \{-1,0\}$ introduced in an accompanying letter [arXiv:1911.06890]. Here $ΔQ_B$ is the change of the boundary charge $Q_B$ for a given chemical potential in the insulating regime when the lattice is shifted by one site towards the boundary, and $\barρ$ is the average charge per site (both in units of the elementary charge $e=1$). This establishes an interesting link between universal properties of the boundary charge and edge state physics discussed within the field of topological insulators.

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Rational boundary charge in one-dimensional systems with interaction and disorder

We study the boundary charge $Q_B$ of generic semi-infinite one-dimensional insulators with translational invariance and show that non-local symmetries (i.e., including translations) lead to rational quantizations $p/q$ of $Q_B$. In particular, we find that (up to an unknown integer) the quantization of $Q_B$ is given in integer units of $\frac{1}{2}\barρ$ and $\frac{1}{2}(\barρ-1)$, where $\barρ$ is the average charge per site (which is a rational number for an insulator). This is a direct generalization of the known half-integer quantization of $Q_B$ for systems with local inversion or local chiral symmetries to any rational value. Quite remarkably, this rational quantization remains valid even in the presence of short-ranged electron-electron interactions as well as static random disorder (breaking translational invariance). This striking stability can be traced back to the fact that local perturbations in insulators induce only local charge redistributions. We establish this result with complementary methods including density matrix renormalization group calculations, bosonization methods, and exact solutions for particular lattice models. Furthermore, for the special case of half-filling $\barρ=\frac{1}{2}$, we present explicit results in single-channel and nearest-neighbor hopping models and identify Weyl semimetal physics at gap closing points. Our general framework also allows us to shed new light on the well-known rational quantization of soliton charges at domain walls.

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Majorana and parafermion corner states from two coupled sheets of bilayer graphene

We consider a setup consisting of two coupled sheets of bilayer graphene in the regime of strong spin-orbit interaction, where electrostatic confinement is used to create an array of effective quantum wires. We show that for suitable interwire couplings the system supports a topological insulator phase exhibiting Kramers partners of gapless helical edge states, while the additional presence of a small in-plane magnetic field and weak proximity-induced superconductivity leads to the emergence of zero-energy Majorana corner states at all four corners of a rectangular sample, indicating the transition to a second-order topological superconducting phase. The presence of strong electron-electron interactions is shown to promote the above phases to their exotic fractional counterparts. In particular, we find that the system supports a fractional topological insulator phase exhibiting fractionally charged gapless edge states and a fractional second-order topological superconducting phase exhibiting zero-energy $\mathbb{Z}_{2m}$ parafermion corner states, where $m$ is an odd integer determined by the position of the chemical potential.

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Spin orbit field in a physically defined p type MOS silicon double quantum dot

We experimentally and theoretically investigate the spin orbit (SO) field in a physically defined, p type metal oxide semiconductor double quantum dot in silicon. We measure the magnetic field dependence of the leakage current through the double dot in the Pauli spin blockade. A finite magnetic field lifts the blockade, with the lifting least effective when the external and SO fields are parallel. In this way, we find that the spin flip of a tunneling hole is due to a SO field pointing perpendicular to the double dot axis and almost fully out of the quantum well plane. We augment the measurements by a derivation of SO terms using group symmetric representations theory. It predicts that without in plane electric fields (a quantum well case), the SO field would be mostly within the plane, dominated by a sum of a Rashba and a Dresselhaus like term. We, therefore, interpret the observed SO field as originated in the electric fields with substantial in plane components.

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Coherence of a driven electron spin qubit actively decoupled from quasi-static noise

The coherence of electron spin qubits in semiconductor quantum dots suffers mostly from low-frequency noise. During the last decade, efforts have been devoted to mitigate such noise by material engineering, leading to substantial enhancement of the spin dephasing time for an idling qubit. However, the role of the environmental noise during spin manipulation, which determines the control fidelity, is less understood. We demonstrate an electron spin qubit whose coherence in the driven evolution is limited by high-frequency charge noise rather than the quasi-static noise inherent to any semiconductor device. We employed a feedback control technique to actively suppress the latter, demonstrating a $π$-flip gate fidelity as high as $99.04\pm 0.23\,\%$ in a gallium arsenide quantum dot. We show that the driven-evolution coherence is limited by the longitudinal noise at the Rabi frequency, whose spectrum resembles the $1/f$ noise observed in isotopically purified silicon qubits.

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Quantum Depinning of a Magnetic Skyrmion

We investigate the quantum depinning of a weakly driven skyrmion out of an impurity potential in a mesoscopic magnetic insulator. For small barrier height, the Magnus force dynamics dominates over the inertial one, and the problem is reduced to a massless charged particle in a strong magnetic field. The universal form of the WKB exponent, the rate of tunneling, and the crossover temperature between thermal and quantum tunneling is provided, independently of the detailed form of the pinning potential. The results are discussed in terms of macroscopic parameters of the insulator Cu2OSeO3 and various skyrmion radii. We demonstrate that small enough magnetic skyrmions, with a radius of ~ 10 lattice sites, consisting of some thousands of spins, can behave as quantum objects at low temperatures in the mK regime.

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Quantum Damping of Skyrmion Crystal Eigenmodes due to Spontaneous Quasiparticle Decay

The elementary excitations of skyrmion crystals experience both emergent magnetic fields and anharmonic interactions brought about by the topologically nontrivial noncollinear texture. The resulting flat bands cause strong spontaneous quasiparticle decay, dressing the eigenmodes of skyrmion crystals with a finite zero-temperature quantum lifetime. Sweeping the flat bands through the spectrum by changing the magnetic field leads to an externally controllable energy-selective magnon breakdown. In particular, we uncover that the three fundamental modes, i.e., the anticlockwise, breathing, and clockwise mode, exhibit distinct decay behavior, with the clockwise (anticlockwise) mode being the least (most) stable mode out of the three.

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Spin Wave Radiation by a Topological Charge Dipole

The use of spin waves (SWs) as data carriers in spintronic and magnonic logic devices offers operation at low power consumption, free of Joule heating. Nevertheless, the controlled emission and propagation of SWs in magnetic materials remains a significant challenge. Here, we propose that skyrmion-antiskyrmion bilayers form topological charge dipoles and act as efficient sub-100 nm SW emitters when excited by in-plane ac magnetic fields. The propagating SWs have a preferred radiation direction, with clear dipole signatures in their radiation pattern, suggesting that the bilayer forms a SW antenna. Bilayers with the same topological charge radiate SWs with spiral and antispiral spatial profiles, enlarging the class of SW patterns. We demonstrate that the characteristics of the emitted SWs are linked to the topology of the source, allowing for full control of the SW features, including their amplitude, preferred direction of propagation, and wavelength.

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Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices

Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site-controlled nanowires is a prerequisite towards the next generation of devices that will require addressability and scalability. Here, combining top-down nanofabrication and bottom-up self-assembly, we report on the growth of Ge wires on pre-patterned Si (001) substrates with controllable position, distance, length and structure. This is achieved by a novel growth process which uses a SiGe strain-relaxation template and can be generalized to other material combinations. Transport measurements show an electrically tunable spin-orbit coupling, with a spin-orbit length similar to that of III-V materials. Also, capacitive coupling between closely spaced wires is observed, which underlines their potential as a host for implementing two qubit gates. The reported results open a path towards scalable qubit devices with Si compatibility.

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Transport signatures of topological phases in double nanowires probed by spin-polarized STM

We study a double-nanowire setup proximity coupled to an $s$-wave superconductor and search for the bulk signatures of the topological phase transition that can be observed experimentally, for example, with an STM tip. Three bulk quantities, namely, the charge, the spin polarization, and the pairing amplitude of intrawire superconductivity are studied in this work. The spin polarization and the pairing amplitude flip sign as the system undergoes a phase transition from the trivial to the topological phase. In order to identify promising ways to observe bulk signatures of the phase transition in transport experiments, we compute the spin current flowing between a local spin-polarized probe, such as an STM tip, and the double-nanowire system in the Keldysh formalism. We find that the spin current contains information about the sign flip of the bulk spin polarization and can be used to determine the topological phase transition point.

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Charge transport of a spin-orbit-coupled Luttinger liquid

The charge transport of a (Tomonaga-)Luttinger liquid with tunnel barriers exhibits universal scaling: the current-voltage curves measured at various temperatures collapse into a single curve upon rescaling. The exponent characterizing this single curve can be used to extract the strength of electron-electron interaction. Motivated by a recent experiment on InAs nanowires [Sato et al., Phys. Rev. B 99, 155304 (2019)], we theoretically investigate the analogous behavior of a spin-orbit-coupled Luttinger liquid. We find that the scaling exponent differs for different impurity strengths, being weak (disorder potential) or strong (tunnel barriers), and their positions, either in the bulk or near the edge of the wire. For each case we quantify the exponent of the universal scaling and its modification due to the spin-orbit coupling. Our findings serve as a guide in the determination of the interaction strength of quasi-one-dimensional spin-orbit-coupled quantum wires from transport measurements.

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First-order magnetic phase-transition of mobile electrons in monolayer MoS$_2$

Evidence is presented for a first-order magnetic phase transition in a gated two-dimensional semiconductor, monolayer-MoS$_2$. The phase boundary separates a spin-polarised (ferromagnetic) phase at low electron density and a paramagnetic phase at high electron density. Abrupt changes in the optical response signal an abrupt change in the magnetism. The magnetic order is thereby controlled via the voltage applied to the gate electrode of the device. Accompanying the change in magnetism is a large change in the electron effective mass.

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Fractional Topological Superconductivity and Parafermion Corner States

We consider a system of weakly coupled Rashba nanowires in the strong spin-orbit interaction (SOI) regime. The nanowires are arranged into two tunnel-coupled layers proximitized by a top and bottom superconductor such that the superconducting phase difference between them is $π$. We show that in such a system strong electron-electron interactions can stabilize a helical topological superconducting phase hosting Kramers partners of $\mathbb{Z}_{2m}$ parafermion edge modes, where $m$ is an odd integer determined by the position of the chemical potential. Furthermore, upon turning on a weak in-plane magnetic field, the system is driven into a second-order topological superconducting phase hosting zero-energy $\mathbb{Z}_{2m}$ parafermion bound states localized at two opposite corners of a rectangular sample. As a special case, zero-energy Majorana corner states emerge in the non-interacting limit $m=1$, where the chemical potential is tuned to the SOI energy of the single nanowires.

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Magnetically-Confined Bound States in Rashba Systems

A Rashba nanowire is subjected to a magnetic field that assumes opposite signs in two sections of the nanowire, and, thus, creates a magnetic domain wall. The direction of magnetic field is chosen to be perpendicular to the Rashba spin-orbit vector such that there is only a partial gap in the spectrum. Nevertheless, we prove analytically and numerically that such a domain wall hosts a bound state whose energy is at bottom of the spectrum below the energy of all bulk states. Thus, this magnetically-confined bound state is well-isolated and can be accessed experimentally. We further show that the same type of magnetic confinement can be implemented in two-dimensional systems with strong spin-orbit interaction. A quantum channel along the magnetic domain wall emerges with a non-degenerate dispersive band that lies energetically below the bulk states. We show that this magnetic confinement is robust against disorder and various parameter variations.

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Coherent backaction between spins and an electronic bath: Non-Markovian dynamics and low-temperature quantum thermodynamic electron cooling

We provide a versatile analytical framework for calculating the dynamics of a spin system in contact with a fermionic bath beyond the Markov approximation. The approach is based on a second order expansion of the Nakajima-Zwanzig master equation but systematically includes all quantum coherent memory effects leading to non-Markovian dynamics. Our results describe, for the free induction decay, the full time range from the non-Markovian dynamics at short times, to the well-known exponential thermal decay at long times. We provide full analytic results for the entire time range using a bath of itinerant electrons as an archetype for universal quantum fluctuations. Furthermore, we propose a quantum thermodynamic scheme to employ the temperature insensitivity of the non-Markovian decay to transport heat out of the electron system and thus, by repeated reinitialization of a cluster of spins, to efficiently cool the electrons at very low temperatures.

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Time-Reversal Invariant Topological Superconductivity in Planar Josephson Bijunction

We consider a Josephson bijunction consisting of a thin $SIS$ $π$-Josephson junction sandwiched between two-dimensional semiconducting layers with strong Rashba spin-orbit interaction. Each of these layers forms an $SNS$ junction due to proximity-induced superconductivity. The $SIS$ junction is assumed to be thin enough such that the two Rashba layers are tunnel-coupled. We show that, by tuning external gates, this system can be controllably brought into a time-reversal invariant topological superconducting phase with a Kramers pair of Majorana bound states being localized at the end of the normal region for a large parameter phase space. In particular, in the strong spin-orbit interaction limit, the topological phase can be accessed already in the regime of small tunneling amplitudes.

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Hinge Modes and Surface States in Second-Order Topological Three-Dimensional Quantum Hall Systems induced by Charge Density Modulation

We consider a system of weakly coupled one-dimensional wires forming a three-dimensional stack in the presence of a spatially periodic modulation of the chemical potential along the wires, equivalent to a charge density wave (CDW). An external static magnetic field is applied parallel to the wire axes. We show that, for a certain parameter regime, due to interplay between the CDW and magnetic field, the system can support a second-order topological phase characterized by the presence of chiral quasi-1D Quantum Hall Effect (QHE) hinge modes. Interestingly, we demonstrate that direction of propagation of the hinge modes depends on the phase of the CDW and can be reversed only by electrical means without the need of changing the orientation of the magnetic field. Furthermore, we show that the system can also support 2D chiral surface QHE states, which can coexist with one-dimensional hinge modes, realizing a scenario of a hybrid high-order topology. We show that the hinge modes are robust against static disorder.

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Chiral Magnonic Edge States in Ferromagnetic Skyrmion Crystals Controlled by Magnetic Fields

Achieving control over magnon spin currents in insulating magnets - where dissipation due to Joule heating is highly suppressed - is an active area of research that could lead to energy-efficient spintronics applications. However, magnon spin currents supported by conventional systems with uniform magnetic order have proven hard to control. An alternative approach that relies on topologically protected magnonic edge states of spatially periodic magnetic textures has recently emerged. A prime example of such textures is the ferromagnetic skyrmion crystal which hosts chiral edge states providing a platform for magnon spin currents. Here, we show, for the first time, an external magnetic field can drive a topological phase transition in the spin wave spectrum of a ferromagnetic skyrmion crystal. The topological phase transition is signaled by the closing of a low-energy bulk magnon gap at a critical field. In the topological phase, below the critical field, two topologically protected chiral magnonic edge states lie within this gap, but they unravel in the trivial phase, above the critical field. Remarkably, the topological phase transition involves an inversion of two magnon bands that at the $Γ$ point correspond to the breathing and anticlockwise modes of the skyrmions in the crystal. Our findings suggest that an external magnetic field could be used as a knob to switch on and off magnon spin currents carried by topologically protected chiral magnonic edge states.

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