arXiv subjects

Daniel Moreno-Garcia

Publications and source records attributed to Daniel Moreno-Garcia.

4 recordsLinked to original sources

arXiv2024

Measuring direct flexoelectricity at the nanoscale

Flexoelectricity is a property of all dielectric materials, where inhomogeneous strain induces electrical polarization. This effect becomes particularly prominent at the nanoscale where larger strain gradients can be obtained. While flexoelectric charges have been measured in mm-scale systems, direct measurements in nanoscale-thickness materials have not yet been achieved. Given that one of the most prominent applications of flexoelectricity is in nano-electro-mechanical systems (NEMS), confirming the presence and magnitude of the effect at these scales is essential. This study presents the first-ever measurements of flexoelectric-generated charges (direct effect) in nanoscale-thickness materials, using cantilevers with a 50 nm hafnium oxide layer. We confirm that the estimated flexoelectric coefficient from said measurements aligns with the values obtained from complementary experiments using the flexoelectric inverse effect. Additionally, by changing the cantilever geometry (modifying the width of the cantilevers), we demonstrate a 40% increase in the effective flexoelectric coefficient, explained by the interplay of different flexoelectric tensor components. These findings not only validate the presence of flexoelectric effects at the nanoscale but also open the possibility for full flexoelectric transduction of the motion in NEMS/MEMS devices.

physics.app-ph↗

arXiv2024

Effect of Annealing on Flexoelectricity in Hafnium Oxide (HfO2)

Flexoelectricity is universal in all dielectrics, effective at high temperatures, and a promising transduction technique for nanoelectromechanical systems (NEMS). However, as flexoelectricity is still in its early stages, many aspects require further investigation. Understanding how flexoelectricity depends on material parameters like crystallographic phase and how temperature might affect it, is important for selecting and optimizing the right material for technological applications. This work studies the influence of high-temperature annealing (and the consequent crystallization) in the flexoelectricity of hafnium oxide (HfO2), a material with significant technological relevance. We measure the flexoelectric coefficient for amorphous (not annealed) and annealed (slightly crystalline) phases of HfO2, with samples annealed in nitrogen or oxygen atmospheres. Our results indicate that the amorphous phase of HfO2 exhibits the highest flexoelectric coefficient (105 $\pm$ 10 pC/m), while annealed samples show a significant decrease, with the lowest value in nitrogen-annealed samples (26 $\pm$ 4 pC/m). Samples annealed in an oxygen atmosphere improve flexoelectric properties (54 $\pm$ 6 pC/m) compared to those annealed in nitrogen. Using cross-sectional imaging, X-ray diffraction, resonance frequency characterization, and relative permittivity measurements, we find that annealing promotes crystallization into the tetragonal phase and increases internal stress within the HfO2 layer, while most other parameters remain constant. We attribute the differences in flexoelectricity from the annealed samples to the quantity of oxygen vacancies in hafnium oxide. These oxygen vacancies in hafnium oxide seem to negatively affect the flexoelectric coefficient. This finding can be applied to optimize materials to enhance their flexoelectric properties.

cond-mat.mtrl-sci↗

arXiv2024

Flexoelectricity in Amorphous Hafnium Oxide (HfO2)

Flexoelectricity, inherent in all materials, offers a promising alternative to piezoelectricity for nanoscale actuation and sensing. However, its widespread application faces significant challenges: differentiating flexoelectric effects from those of piezoelectricity and other phenomena, verifying its universality across all material structures and thicknesses, and establishing a comprehensive database of flexoelectric coefficients across different materials. This work introduces a groundbreaking methodology that accurately isolates flexoelectricity from piezoelectric, electrostrictive and electrostatic effects, with a detection threshold extending below 1 fC/m. The robustness of this method is demonstrated through its application to amorphous hafnium oxide (HfO$_2$), successfully measuring a flexoelectric coefficient of 105 $\pm$ 10 pC/m. This measurement signifies the first measurement of flexoelectricity in hafnia, as well as in any amorphous material. Additionally, the study compiles a list of published flexoelectric coefficients, revealing an important insight. The relationship between the flexoelectric coefficient and the material's relative permittivity is better approximated by a quadratic proportionality. This challenges the traditional linear assumption proposed in Kogan's work and opens new avenues for future research in flexoelectric materials.

cond-mat.mtrl-sci↗

arXiv2023

Binary classification of spoken words with passive phononic metamaterials

Mitigating the energy requirements of artificial intelligence requires novel physical substrates for computation. Phononic metamaterials have a vanishingly low power dissipation and hence are a prime candidate for green, always-on computers. However, their use in machine learning applications has not been explored due to the complexity of their design process: Current phononic metamaterials are restricted to simple geometries (e.g. periodic, tapered), and hence do not possess sufficient expressivity to encode machine learning tasks. We design and fabricate a non-periodic phononic metamaterial, directly from data samples, that can distinguish between pairs of spoken words in the presence of a simple readout nonlinearity; hence demonstrating that phononic metamaterials are a viable avenue towards zero-power smart devices.

eess.SP↗