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Daniel Rosenmann

Publications and source records attributed to Daniel Rosenmann.

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Synthesis and transport properties of epitaxial Bi (111) films on GaAs (111) substrates

In recent decades, the growth of ultrathin epitaxial bismuth (Bi) films on various substrates has garnered interest due to their unique electronic properties. We report upon the growth and electrical transport properties of epitaxial Bi (111) films in the thickness range of 5-32 nm deposited directly on GaAs (111) substrates, without a buffer layer. The quality of Bi films is found to depend on conditions for substrate treatment using Ar+ ion-milling and annealing. Substrates milled at low ion beam currents display poor surface reconstruction after annealing, which hinders the growth of high-quality films. In contrast, substrates milled under optimized conditions led to reconstructed surfaces upon annealing, resulting in epitaxial Bi films with predominantly single-domain orientation. Although epitaxial films formed in both cases, transport measurements indicated significantly higher conductivity for films grown on optimally treated substrates. Measurements at low temperatures suggest that the transport properties are dominated by a surface state with high mobility electrons. Magneto-transport measurements suggest that conductivity and mobility improve progressively with increasing film thickness. For the thinnest 5 nm film, a hole-like state emerges, presumably as the electron-like state is gapped out. These results provide a robust methodology for growing high-quality epitaxial Bi films on GaAs (111) and offer insights into their unique transport properties, and our ability to tune them.

cond-mat.mtrl-sci

Cryogenic hybrid magnonic circuits based on spalled YIG thin films

Yttrium iron garnet (YIG) magnonics has garnered significant research interest because of the unique properties of magnons (quasiparticles of collective spin excitation) for signal processing. In particular, hybrid systems based on YIG magnonics show great promise for quantum information science due to their broad frequency tunability and strong compatibility with other platforms. However, their broad applications have been severely constrained by substantial microwave loss in the gadolinium gallium garnet (GGG) substrate at cryogenic temperatures. In this study, we demonstrate that YIG thin films can be spalled from YIG/GGG samples. Our approach is validated by measuring hybrid devices comprising superconducting resonators and spalled YIG films, which exhibits anti-crossing features that indicate strong coupling between magnons and microwave photons. Such new capability of separating YIG thin films from GGG substrates via spalling, and the integrated superconductor-YIG devices represent a significant advancement for integrated magnonic devices, paving the way for advanced magnon-based coherent information processing.

cond-mat.mes-hall

X-ray Spectroscopy of a Rare-Earth Molecular System Measured at the Single Atom Limit in Room Temperature

We investigate the limit of X-ray detection at room temperature on rare-earth molecular films using lanthanum and a pyridine-based dicarboxamide organic linker as a model system. Synchrotron X-ray scanning tunneling microscopy is used to probe the molecules with different coverages on a HOPG substrate. X-ray-induced photocurrent intensities are measured as a function of molecular coverage on the sample allowing a correlation of the amount of La ions with the photocurrent signal strength. X-ray absorption spectroscopy shows cogent M4,5 absorption edges of the lanthanum ion originated by the transitions from the 3d3/2 and 3d5/2 to 4f orbitals. X-ray absorption spectra measured in the tunneling regime further reveal an X-ray excited tunneling current produced at the M4,5 absorption edge of La ion down to the ultimate atomic limit at room temperature.

cond-mat.mtrl-sci

Dynamic-quenching of a single-photon avalanche photodetector using an adaptive resistive switch

One of the most common approaches for quenching single-photon avalanche diodes is to use a passive resistor in series with it. A drawback of this approach has been the limited recovery speed of the single-photon avalanche diodes. High resistance is needed to quench the avalanche, leading to slower recharging of the single-photon avalanche diodes depletion capacitor. We address this issue by replacing a fixed quenching resistor with a bias-dependent adaptive resistive switch. Reversible generation of metallic conduction enables switching between low and high resistance states under unipolar bias. As an example, using a Pt/Al2O3/Ag resistor with a commercial silicon single-photon avalanche diodes, we demonstrate avalanche pulse widths as small as ~30 ns, 10x smaller than a passively quenched approach, thus significantly improving the single-photon avalanche diodes frequency response. The experimental results are consistent with a model where the adaptive resistor dynamically changes its resistance during discharging and recharging the single-photon avalanche diodes.

physics.ins-det

Experimental demonstration of near-infrared epsilon-near-zero multilayer metamaterial slabs

Near-infrared epsilon-near-zero (ENZ) metamaterial slabs based on silver-germanium (Ag-Ge) multilayers are experimentally demonstrated. Transmission, reflection and absorption spectra are characterized and used to determine the complex refractive indices and the effective permittivities of the ENZ metamaterial slabs, which match the results obtained from both the numerical simulations and the optical nonlocalities analysis. A rapid post-annealing process is used to reduce the collision frequency of silver and therefore decrease the optical absorption loss of multilayer metamaterial slabs. Furthermore, multilayer grating structures are studied to enhance the optical transmission and also tune the location of ENZ wavelength. The demonstrated near-infrared ENZ multilayer metamaterial slabs are important for realizing many exotic applications, such as phase front shaping and engineering of photonic density of states.

physics.optics

Tungsten silicide films for microwave kinetic inductance detectors

Microwave Kinetic Inductance Detectors (MKIDs) provide highly multiplexed arrays of detectors that can be configured to operate from the sub-millimeter to the X-ray regime. We have examined two tungsten silicide alloys (W5Si3 and WSi2), which are dense alloys that provide a critical temperature tunable with composition, large kinetic inductance fraction, and high normal-state resistivity. We have fabricated superconducting resonators and provide measurement data on critical temperature, surface resistance, quality factor, noise, and quasiparticles lifetime. Tungsten silicide appears to be promising for microwave kinetic inductance detectors.

cond-mat.supr-con