Daniel Rothhardt | Searcharxiv

arXiv2025

Nucleation of magnetic skyrmions on curvilinear surfaces using local magnetic fields

Magnetic skyrmions stabilized by interfacial Dzyaloshinskii-Moriya interactions (DMI) are promising candidates for applications in memory, logic, and neuromorphic computing. Beyond planar films, theoretical studies predict that curvature can influence skyrmion stability by introducing effective chiral interactions. Here, we investigate skyrmion formation on self-assembled polystyrene particles coated with Pt/Co/Ta multilayers by magnetron sputtering. Vibrating sample magnetometry reveals clear differences in the magnetic reversal behavior of the curvilinear film compared to that of the planar counterpart. Using non-invasive imaging methods such as scanning transmission X-ray microscopy and high-sensitivity in-vacuum magnetic force microscopy (MFM) with low moment magnetic tipcs, we observe a maze domain pattern for the planar films while the curvilinear film reveals three-dimensional spiraling stripe states. By employing a conventional MFM operating under ambient conditions requiring a tip with a higher magnetic moment, we demonstrate that these stripe states can rupture into metastable skyrmions located at the top of the spherical particles by applying consecutive scans. Our results demonstrate that curvilinear films offer an accessible platform for stabilizing single skyrmions using local magnetic field stimuli, opening pathways to study the interplay between interfacial and curvature-induced DMIs and enabling controlled skyrmion writing on three-dimensional magnetic architectures.

cond-mat.mes-hall↗

arXiv2018

The perovskite/transport layer interfaces dominate non-radiative recombination in efficient perovskite solar cells

Charge transport layers (CTLs) are key components of diffusion controlled perovskite solar cells, however, they can induce additional non-radiative recombination pathways which limit the open circuit voltage (V_OC) of the cell. In order to realize the full thermodynamic potential of the perovskite absorber, both the electron and hole transport layer (ETL/HTL) need to be as selective as possible. By measuring the quasi-Fermi level splitting (QFLS) of perovskite/CTL heterojunctions, we quantify the non-radiative interfacial recombination current for a wide range of commonly used CTLs, including various hole-transporting polymers, spiro-OMeTAD, metal oxides and fullerenes. We find that all studied CTLs limit the V_OC by inducing an additional non-radiative recombination current that is significantly larger than the loss in the neat perovskite and that the least-selective interface sets the upper limit for the V_OC of the device. The results also show that the V_OC equals the internal QFLS in the absorber layer of (pin, nip) cells with selective CTLs and power conversion efficiencies of up to 21.4%. However, in case of less selective CTLs, the V_OC is substantially lower than the QFLS which indicates additional losses at the contacts and/or interfaces. The findings are corroborated by rigorous device simulations which outline several important considerations to maximize the V_OC. This work shows that the real challenge to supress non-radiative recombination losses in perovskite cells on their way to the radiative limit lies in the suppression of carrier recombination at the perovskite/CTL interfaces.

physics.app-ph↗