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Dao Hua Zhang

Publications and source records attributed to Dao Hua Zhang.

5 recordsLinked to original sources
arXiv2021

Non-invasive super-resolution imaging through scattering media using fluctuating speckles

Extending super-resolution imaging techniques to objects hidden in strongly scattering media potentially revolutionize the technical analysis for much broader categories of samples, such as biological tissues. The main challenge is the media's inhomogeneous structures which scramble the light path and create noise-like speckle patterns, hindering the object's visualization even at a low-resolution level. Here, we propose a computational method relying on the object's spatial and temporal fluctuation to visualize nanoscale objects through scattering media non-invasively. The fluctuating object can be achieved by random speckle illumination, illuminating through dynamic scattering media, or flickering emitters. The optical memory effect allows us to derive the object at diffraction limit resolution and estimate the point spreading function (PSF). Multiple images of the fluctuating object are obtained by deconvolution, then super-resolution images are achieved by computing the high order cumulants. Non-linearity of high order cumulant significantly suppresses the noise and artifacts in the resulting images and enhances the resolution by a factor of $\sqrt{N}$, where $N$ is the cumulant order. Our non-invasive super-resolution speckle fluctuation imaging (NISFFI) presents a nanoscopy technique with very simple hardware to visualize samples behind scattering media.

physics.optics↗
arXiv2019

Band structure of Ge$_{1-x}$Sn$_{x}$alloy: a full-zone 30-band $k$$\cdot$$p$ model

A full-zone 30-band $k$$\cdot$$p$ model is developed as an efficient and reliable tool to compute electronic band structure in Ge$_{1-x}$Sn$_{x}$ alloy. The model was first used to reproduce the electronic band structures in Ge and $α$-Sn obtained with empirical tight binding and \textit{ab initio} methods. Input parameters for the 30-band $k$$\cdot$$p$ model are carefully calibrated against prior empirical predications and experimental data. Important material properties such as effective mass for electrons and holes, Luttinger parameters, and density of states are obtained for Ge$_{1-x}$Sn$_{x}$ alloy with the composition range $0<x<0.3$. The 30-band $k$$\cdot$$p$ model that requires far less computing resources is a necessary capability for optimization of sophisticated devices made from Ge$_{1-x}$Sn$_{x}$ alloy with a large parameter space to explore.

physics.app-ph↗
arXiv2017

Temperature-dependent Optoelectronic Properties of Quasi-2D Colloidal Cadmium Selenide Nanoplatelets

Colloidal Cadmium Selenide (CdSe) nanoplatelets (NPLs) are a recently developed class of efficient luminescent nanomaterial suitable for optoelectronic device applications. A change in temperature greatly affects their electronic bandstructure and luminescence properties. It is important to understand how-and-why the characteristics of NPLs are influenced, particularly at elevated temperature, where both reversible and irreversible quenching processes come into picture. Here we present a study on the effect of elevated temperature on the characteristics of colloidal CdSe NPLs. We used an effective-mass envelope function theory based 8-band k$\cdot$p model and density-matrix theory considering exciton-phonon interaction. We observed the photoluminescence (PL) spectra at various temperatures for their photon emission energy, PL linewidth and intensity by considering the exciton-phonon interaction with both acoustic and optical phonons using Bose-Einstein statistical factors. With rise in temperature we observed a fall in the transition energy (emission redshift), matrix element, Fermi factor and quasi Fermi separation, with reduction in intraband state gaps and increased interband coupling. Also, there was a fall in the PL intensity, along with spectral broadening due to an intraband scattering effect. The predicted transition energy values and simulated PL spectra at varying temperatures exhibit appreciable consistency with experimental results. Our findings have important implications for application of NPLs in optoelectronic devices, such as NPL lasers and LEDs, operating much above room temperature.

cond-mat.mes-hall↗
arXiv2017

Optoelectronics of Inverted Type-I CdS/CdSe Core/Crown Quantum Ring

Inverted type-I heterostructure core/crown quantum rings (QRs) are quantum-efficient luminophores, whose spectral characteristics are highly tunable. Here, we study the optoelectronic properties of type-I core/crown CdS/CdSe QRs in the zincblende phase - over contrasting lateral size and crown width. For this we inspect their strain profiles, transition energies, transition matrix elements, spatial charge densities, electronic bandstructure, band-mixing probabilities, optical gain spectra, maximum optical gains and differential optical gains. Our framework uses an effective-mass envelope function theory based on the 8-band k$\cdot$p method employing the valence force field model for calculating the atomic strain distributions. The gain calculations are based on the density-matrix equation and take into consideration the excitonic effects with intraband scattering. Variations in the QR lateral size and relative widths of core and crown (ergo the composition) affect their energy levels, band-mixing probabilities, optical transition matrix elements, emission wavelengths/intensity, etc. The optical gain of QRs is also strongly dimension and composition dependent with further dependency on the injection carrier density causing band-filling effect. They also affect the maximum and differential gain at varying dimensions and compositions.

cond-mat.mes-hall↗