arXiv subjects

Daryoush Shiri

Publications and source records attributed to Daryoush Shiri.

25 records · Page 2Linked to original sources

arXiv2017

Gunn Effect in Silicon Nanowires: Charge Transport under High Electric Field

Gunn (or Gunn-Hilsum) Effect and its associated negative differential resistivity (NDR) emanates from transfer of electrons between two different energy bands in a semiconductor. If applying a voltage (electric field) transfers electrons from an energy sub band of a low effective mass to a second one with higher effective mass, then the current drops. This manifests itself as a negative slope or NDR in the I-V characteristics of the device which is in essence due to the reduction of electron mobility. Recalling that mobility is inversely proportional to electron effective mass or curvature of the energy sub band. This effect was observed in semiconductors like GaAs which has direct bandgap of very low effective mass and its second indirect sub band is about 300 meV above the former. More importantly a self-repeating oscillation of spatially accumulated charge carriers along the transport direction occurs which is the artifact of NDR, a process which is called Gunn oscillation and was observed by J. B. Gunn. In sharp contrast to GaAs, bulk silicon has a very high energy spacing (~1 eV) which renders the initiation of transfer-induced NDR unobservable. Using Density Functional Theory (DFT), semi-empirical 10 orbital ($sp^{3}d^{5}s^{*}$) Tight Binding (TB) method and Ensemble Monte Carlo (EMC) simulations we show for the first time that (a) Gunn Effect can be induced in narrow silicon nanowires with diameters of 3.1 nm under 3 % tensile strain and an electric field of 5000 V/cm, (b) the onset of NDR in I-V characteristics is reversibly adjustable by strain and (c) strain can modulate the value of resistivity by a factor 2.3 for SiNWs of normal I-V characteristics i.e. those without NDR. These observations are promising for applications of SiNWs in electromechanical sensors and adjustable microwave oscillators.

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arXiv2017

Photoconductive response of strained silicon nanowires: A Monte Carlo study

Using Ensemble Monte Carlo simulations the photocurrent in a 500nm long strained [110] silicon nanowire with diameter of 3.1 nm is investigated. It was observed that a phototransistor based on this nanowire can have responsivities in the order of 21.3 mA/W for an input light wavelength of 532 nm and intensity of 0.25-2.5 kW/cm2. The super-unity slope of 1.2 in photo conductance versus input light intensity suggests that the nanowire has a photoconductive gain and highlights its advantage over germanium nanowires with sub-unity slope (0.77). The generated photocurrents are in the 0.1 nA-1 nA range. Density Functional Theory (DFT) and Tight Binding (TB) methods were used for strain application and band structure calculation, respectively. Both longitudinal acoustic and optical phonons were included in the calculation of the carrier-phonon scattering events, which showed a two-order of magnitude stronger role for longitudinal optical phonons.

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arXiv2017

Ab initio Study of Nonlinear Optical Susceptibilities in Silicon Nanowires

Using Time Independent Density Functional Theory (TIDFT) it is shown that the 2nd order optical susceptibilities of narrow (1nm-2nm) Silicon Nanowires (SiNW) are enhanced due to surface termination. The value of $χ^{(2)}$ is enhanced up to 200 pm/V which is promising a strong Second Harmonic Generation (SHG) in SiNWs. For [100], [110] and [111] SiNWs, yxx component of $χ^{(2)}$ tensor is 81, 225 and 81 pm/V, respectively. These are in close agreement with $χ^{(2)}$ values reported for strained silicon waveguides in experiments. The 3rd order susceptibility, $χ^{(3)}$, is within the range of (0.1-12)x$10^{-18} \frac{m^{2}}{V^{2}}$ which is close to the experimental values of bulk silicon (0.1-0.2)x$10^{-18} \frac{m^{2}}{V^{2}}$ for [110] and [100] SiNWs and it is 100 times better for [111] SiNW. This study suggests possibilities of enhancing SHG in SiNWs through symmetry breaking via strain and surface termination/reconstruction as well as suitability of this DFT-based method in predicting nonlinear optical susceptibilities of nano structures.

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arXiv2017

Reversible Modulation of Spontaneous Emission by Strain in Silicon Nanowires

We computationally study the effect of uniaxial strain in modulating the spontaneous emission of photons in silicon nanowires. Our main finding is that a one to two orders of magnitude change in spontaneous emission time occurs due to two distinct mechanisms: (A) Change in wave function symmetry, where within the direct bandgap regime, strain changes the symmetry of wave functions, which in turn leads to a large change of optical dipole matrix element. (B) Direct to indirect bandgap transition which makes the spontaneous photon emission to be of a slow second order process mediated by phonons. This feature uniquely occurs in silicon nanowires while in bulk silicon there is no change of optical properties under any reasonable amount of strain. These results promise new applications of silicon nanowires as optoelectronic devices including a mechanism for lasing. Our results are verifiable using existing experimental techniques of applying strain to nanowires.

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arXiv2017

Photo absorption enhancement in strained silicon nanowires: An atomistic study

The absorption spectra of silicon nanowires (SiNW) are calculated using semi-empirical $sp^{3}d^{5}s^{*}$ tight binding (TB) and Density Functional Theory (DFT) methods. The role of diameter, wave function symmetry, strain and crystallographic direction in determining the absorption are discussed. We find that compressive strain can change the band edge absorption by more than one order of magnitude due to change in wave function symmetry. In addition, photon polarization with respect to the nanowire axis significantly alters the band edge absorption. Overall, the band edge absorption of [110] and [100] silicon nanowires can differ by as much as three orders of magnitude. We find that compared to bulk Silicon, a strained Silicon nanowire array can absorb infrared photons (1.1 eV) approximately one hundred times better. Finally, we compare a fully numerical and a computationally efficient semi-analytical method, and find that they both yield satisfactory values of the band edge absorption.

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arXiv2017

Dynamic in situ Control of Heat Rectification in Graphene Nano Ribbons using Electric Field-induced Strain

An increasing number of papers propose routes to implement thermal counterparts of electronic rectification. These schemes are mainly based on combinations of crystal anharmonicity and broken mirror symmetry. With respect to graphene, proposals pivot around shape asymmetry induced by using hetero-structures of nano-patterned or defected sections of pristine graphene. Using Molecular Dynamics (MD) we show that it suffices to split a graphene nano-ribbon into two unequal strained sections using external force which leads to large asymmetry in the forward and reverse heat fluxes. We find that the corresponding rectification ratio is enhanced by up to 60 %. Also, and more importantly, the polarity is controllable on-the-fly, i.e. by changing the position where force is applied. Based upon our results we propose a thermo-electric device which obviates the complex nano-patterning and lithography required to pattern graphene every time a new rectification value or sign is sought for, opening a route to simpler fabrication and characterization of phononic phenomena in 2D materials.

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arXiv2014

Magnetoconductance signatures of subband structure in semiconductor nanowires

The radial confining potential in a semiconductor nanowire plays a key role in determining its quantum transport properties. Previous reports have shown that an axial magnetic field induces flux-periodic conductance oscillations when the electronic states are confined to a shell. This effect is due to the coupling of orbital angular momentum to the magnetic flux. Here, we perform calculations of the energy level structure, and consequently the conductance, for more general cases ranging from a flat potential to strong surface band bending. The transverse states are not confined to a shell, but are distributed across the nanowire. It is found that, in general, the subband energy spectrum is aperiodic as a function of both gate voltage and magnetic field. In principle, this allows for precise identification of the occupied subbands from the magnetoconductance patterns of quasi-ballistic devices. The aperiodicity becomes more apparent as the potential flattens. A quantitative method is introduced for matching features in the conductance data to the subband structure resulting from a particular radial potential, where a functional form for the potential is used that depends on two free parameters. Finally, a short-channel InAs nanowire FET device is measured at low temperature in search of conductance features that reveal the subband structure. Features are identified and shown to be consistent with three specific subbands. The experiment is analyzed in the context of the weak localization regime, however, we find that the subband effects predicted for ballistic transport should remain visible when back scattering dominates over interband scattering, as is expected for this device.

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