arXiv subjects

Daun Chung

Publications and source records attributed to Daun Chung.

6 recordsLinked to original sources

arXiv2025

Phase-Space Topology in a Single-Atom Synthetic Dimension

We investigate topological features in the synthetic Fock-state lattice (FSL) of a single-atom system described by the quantum Rabi model. By diagonalizing the Hamiltonian, we identify a zero-energy defect state localized at a domain wall of the FSL, whose spin polarization is topologically protected. To address the challenge of applying band topology to the FSL, we introduce a physically motivated and directly measurable topological invariant based on phase-space geometry-the phase-space winding number. We show that the Zak phase, computed using a phase-space parameter, is related to the invariant. This quantized geometric phase reflects the spin polarization of the defect state, demonstrating a bulk-boundary correspondence. The resulting phase-space topology reveals the emergence of single-atom dressed states with contrasting properties-topologically protected spin states and driving-tunable bosonic states. Our results establish phase-space topology as a novel framework for exploring topological physics in single-atom synthetic dimensions, uncovering quantum-unique topological protection distinct from classical analogs.

quant-ph↗

arXiv2025

Radio-Frequency Pseudo-Null Induced by Light in an Ion Trap

In a linear radio-frequency (rf) ion trap, the rf null is the point of zero electric field in the dynamic trapping potential where the ion motion is approximately harmonic. When displaced from the rf null, the ion is superimposed by fast oscillations known as micromotion, which can be probed through motion-sensitive light-atom interactions. In this work, we report on the emergence of the rf pseudo-null, a locus of points where the ion responds to light as if it were at the true rf null, despite being displaced from it. The phenomenon is fully explained by accounting for the general two-dimensional structure of micromotion and is experimentally verified under various potential configurations, with observations in great agreement with numerical simulations. The rf pseudo-null manifests as a line in a two-dimensional parameter space, determined by the geometry of the incident light and its overlap with the motional structure of the ion. The true rf null occurs uniquely at the concurrent point of the pseudo-null lines induced by different light sources.

physics.atom-ph↗

arXiv2024

A silicon-based ion trap chip protected from semiconductor charging

Silicon-based ion trap chips can benefit from existing advanced fabrication technologies, such as multi-metal layer techniques for two-dimensional architectures and silicon photonics for the integration of on-chip optical components. However, the scalability of these technologies may be compromised by semiconductor charging, where photogenerated charge carriers produce electric potentials that disrupt ion motion. Inspired by recent studies on charge distribution mechanisms in semiconductors, we developed a silicon-based chip with gold coated on all exposed silicon surfaces. This modification significantly stabilized ion motion compared to a chip without such metallic shielding, a result that underscores the detrimental effects of exposed silicon. With the mitigation of background silicon-induced fields to negligible levels, quantum operations such as sideband cooling and two-ion entangling gates, which were previously infeasible with the unshielded chip, can now be implemented.

quant-ph↗

arXiv2023

Photo-induced charge carrier dynamics in a semiconductor-based ion trap investigated via motion-sensitive qubit transitions

Ion trap systems built upon microfabricated chips have emerged as a promising platform for quantum computing to achieve reproducible and scalable structures. However, photo-induced charging of materials in such chips can generate undesired stray electric fields that disrupt the quantum state of the ion, limiting high-fidelity quantum control essential for practical quantum computing. While crude understanding of the phenomena has been gained heuristically over the past years, explanations for the microscopic mechanism of photo-generated charge carrier dynamics remains largely elusive. Here, we present a photo-induced charging model for semiconductors, whose verification is enabled by a systematic interaction between trapped ions and photo-induced stray fields from exposed silicon surfaces in our chip. We use motion-sensitive qubit transitions to directly characterize the stray field and analyze its effect on the quantum dynamics of the trapped ion. In contrast to incoherent errors arising from the thermal motion of the ion, coherent errors are induced by the stray field, whose effect is significantly imprinted during the quantum control of the ion. These errors are investigated in depth and methods to mitigate them are discussed. Finally, we extend the implications of our study to other photo-induced charging mechanisms prevalent in ion traps.

quant-ph↗

arXiv2023

Micromotion compensation of trapped ions by qubit transition and direct scanning of dc voltages

Excess micromotion is detrimental to accurate qubit control of trapped ions, thus measuring and minimizing it is crucial. In this paper, we present a simple approach for measuring and suppressing excess micromotion of trapped ions by leveraging the existing laser-driven qubit transition scheme combined with direct scanning of dc voltages. The compensation voltage is deduced by analyzing the Bessel expansion of a scanned qubit transition rate. The method provides a fair level of sensitivity for practical quantum computing applications, while demanding minimal deviation of trap condition. By accomplishing compensation of excess micromotion in the qubit momentum-excitation direction, the scheme offers an additional avenue for excess micromotion compensation, complementing existing compensation schemes.

quant-ph↗

arXiv2021

Observation of Kondo hybridization with an orbital-selective Mott phase in 4d Ca2-xSrxRuO4

The heavy fermion state with Kondo-hybridization (KH), usually manifested in f-electron systems with lanthanide or actinide elements, was recently discovered in several 3d transition metal compounds without f-electrons. However, KH has not yet been observed in 4d/5d transition metal compounds, since more extended 4d/5d orbitals do not usually form flat bands that supply localized electrons appropriate for Kondo pairing. Here, we report a doping- and temperature-dependent angle-resolved photoemission study on 4d Ca2-xSrxRuO4, which shows the signature of KH. We observed a spectral weight transfer in the γ-band, reminiscent of an orbital-selective Mott phase (OSMP). The Mott localized γ-band induces KH with the itinerant \b{eta}-band, resulting in spectral weight suppression around the Fermi level. Our work is the first to demonstrate the evolution of the OSMP with possible KH among 4d electrons, and thereby expands the material boundary of Kondo physics to 4d multi-orbital systems.

cond-mat.str-el↗