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David Awschalom

Publications and source records attributed to David Awschalom.

6 recordsLinked to original sources

Development of Quantum InterConnects for Next-Generation Information Technologies

Just as classical information technology rests on a foundation built of interconnected information-processing systems, quantum information technology (QIT) must do the same. A critical component of such systems is the interconnect, a device or process that allows transfer of information between disparate physical media, for example, semiconductor electronics, individual atoms, light pulses in optical fiber, or microwave fields. While interconnects have been well engineered for decades in the realm of classical information technology, quantum interconnects (QuICs) present special challenges, as they must allow the transfer of fragile quantum states between different physical parts or degrees of freedom of the system. The diversity of QIT platforms (superconducting, atomic, solid-state color center, optical, etc.) that will form a quantum internet poses additional challenges. As quantum systems scale to larger size, the quantum interconnect bottleneck is imminent, and is emerging as a grand challenge for QIT. For these reasons, it is the position of the community represented by participants of the NSF workshop on Quantum Interconnects that accelerating QuIC research is crucial for sustained development of a national quantum science and technology program. Given the diversity of QIT platforms, materials used, applications, and infrastructure required, a convergent research program including partnership between academia, industry and national laboratories is required. This document is a summary from a U.S. National Science Foundation supported workshop held on 31 October - 1 November 2019 in Alexandria, VA. Attendees were charged to identify the scientific and community needs, opportunities, and significant challenges for quantum interconnects over the next 2-5 years.

quant-ph

Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide

Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective, near-telecom optical interface. However, previous studies were hindered by material quality resulting in limited coherent control. In this work, we implant Cr into commercial 4H-SiC and show optimal defect activation after annealing above 1600 C. We measure an ensemble optical hole linewidth of 31 MHz, an order of magnitude improvement compared to as-grown samples. An in-depth exploration of optical and spin dynamics reveals efficient spin polarization, coherent control, and readout with high fidelity (79%). We report T1 times greater than 1 second at cryogenic temperatures (15 K) with a T2* = 317 nanoseconds and a T2 = 81 microseconds, where spin dephasing times are currently limited by spin-spin interactions within the defect ensemble. Our results demonstrate the potential of Cr4+ in SiC as an extrinsic, optically active spin qubit.

quant-ph

Quantum Sensing for High Energy Physics

Report of the first workshop to identify approaches and techniques in the domain of quantum sensing that can be utilized by future High Energy Physics applications to further the scientific goals of High Energy Physics.

hep-ex

Deterministic coupling of delta-doped NV centers to a nanobeam photonic crystal cavity

The negatively-charged nitrogen vacancy center (NV) in diamond has generated significant interest as a platform for quantum information processing and sensing in the solid state. For most applications, high quality optical cavities are required to enhance the NV zero-phonon line (ZPL) emission. An outstanding challenge in maximizing the degree of NV-cavity coupling is the deterministic placement of NVs within the cavity. Here, we report photonic crystal nanobeam cavities coupled to NVs incorporated by a delta-doping technique that allows nanometer-scale vertical positioning of the emitters. We demonstrate cavities with Q up to ~24,000 and mode volume V ~ $0.47(λ/n)^{3}$ as well as resonant enhancement of the ZPL of an NV ensemble with Purcell factor of ~20. Our fabrication technique provides a first step towards deterministic NV-cavity coupling using spatial control of the emitters.

cond-mat.mes-hall

Emergence of the persistent spin helix in semiconductor quantum wells

According to Noethers theorem, for every symmetry in nature there is a corresponding conservation law. For example, invariance with respect to spatial translation corresponds to conservation of momentum. In another well-known example, invariance with respect to rotation of the electrons spin, or SU(2) symmetry, leads to conservation of spin polarization. For electrons in a solid, this symmetry is ordinarily broken by spin-orbit coupling, allowing spin angular momentum to flow to orbital angular momentum. However, it has recently been predicted that SU(2) can be achieved in a two-dimensional electron gas, despite the presence of spin-orbit coupling. The corresponding conserved quantities include the amplitude and phase of a helical spin density wave termed the persistent spin helix. SU(2) is realized, in principle, when the strength of two dominant spin-orbit interactions, the Rashba (strength parameterized by α) and linear Dresselhaus (β_1), are equal. This symmetry is predicted to be robust against all forms of spin-independent scattering, including electron-electron interactions, but is broken by the cubic Dresselhaus term (β_3) and spin-dependent scattering. When these terms are negligible, the distance over which spin information can propagate is predicted to diverge as αapproaches β_1. Here we observe experimentally the emergence of the persistent spin helix in GaAs quantum wells by independently tuning αand β_1. Using transient spin-grating spectroscopy, we find a spin-lifetime enhancement of two orders of magnitude near the symmetry point.........

cond-mat.mtrl-sci

Fabrication and Characterization of Two-Dimensional Photonic Crystal Microcavities in Nanocrystalline Diamond

Diamond-based photonic devices offer exceptional opportunity to study cavity QED at room temperature. Here we report fabrication and optical characterization of high quality photonic crystal (PC) microcavities based on nanocrystalline diamond. Fundamental modes near the emission wavelength of negatively charged nitrogen-vacancy (N-V) centers (637 nm) with quality factors (Qs) as high as 585 were observed. Three-dimensional Finite-Difference Time-Domain (FDTD) simulations were carried out and had excellent agreement with experimental results in the values of the mode frequencies. Polarization measurements of the modes were characterized; their anomalous behavior provides important insights to scattering loss in these structures.

cond-mat.mtrl-sci