arXiv subjects

David Broido

Publications and source records attributed to David Broido.

14 recordsLinked to original sources

arXiv2025

Thermal conductivity of boron arsenide above 2100 watts per meter per Kelvin at room temperature

Boron arsenide (BAs) single crystals had been previously reported to have thermal conductivity of 1500 W/mK at room temperature. Now we achieved thermal conductivity above 2100 W/mK at room temperature in BAs crystals due to much lower concentration of impurities Si, C, and O grown from purified arsenic. We also observed a T-1.8 dependence of the thermal conductivity, suggesting a more significant contribution from four-phonon scatterings than suggested by previous theory. We found that our experimental result can be fit with a modified theoretical calculation by tuning down the three-phonon scattering for phonons in the 4-8 THz range, although current phonon transport theory cannot provide a physical explanation. Such an advance will not only attract more effort on growing BAs single crystals and studying their practical applications but also stimulate theoretical work to predict more materials with possibly even higher thermal conductivities.

cond-mat.mtrl-sci↗

arXiv2022

Colossal phonon drag enhanced thermopower in lightly doped diamond

Diamond is one of the most studied materials because of its unique combination of remarkable electrical, mechanical, thermal and optical properties. Using a fully self-consistent ab initio theory of coupled electron-phonon transport, we reveal another striking behavior: a huge drag enhancement of the thermopower of lightly doped diamond. Thermopower values of around 100,000 microvolts per Kelvin are found at 100 K, significantly exceeding the highest previously measured value in the correlated metal FeSb2, and occurring at much higher temperatures. The enormous thermopower in diamond arises primarily from exceptionally weak anharmonic phonon decay around and below 100 K that facilitates efficient momentum exchange between charge carriers and phonons through electron-phonon interactions. Exceedingly large thermoelectric power factors are also identified. This work gives insights into the physics of the coupled electron-phonon system in solids and advances our understanding of thermoelectric transport in the regime of strong drag.

cond-mat.mtrl-sci↗

arXiv2022

Hybrid ab initio method for examining thermal properties in magnetic materials

A hybrid ab initio theoretical approach for examining thermal properties in magnetic systems of unknown entropy is presented. Commonly used theoretical approaches interrogate thermal properties from Gibbs/Helmholtz free energies, which require an accurate model of magnetic interactions. The present approach avoids this requirement by instead calculating system pressure from thermally disordered microstates that properly incorporate vibrational and spin subsystems at each temperature as well as the coupling between these subsystems. In place of a specific model for magnetic interactions, the approach integrates measurements of temperature dependent magnetization of the studied material. We apply the approach to calculate phonon modes and to investigate the anomalously low thermal expansion of the classical Invar alloy, Fe_0.65Ni_0.35. The calculated phonon dispersions for Invar are in excellent agreement with measured data. The Invar thermal expansion is shown to remain small between 50 K and room temperature, consistent with the experimentally observed low thermal expansion value in this same temperature range. This anomalously small thermal expansion is directly connected to a small positive contribution from lattice thermal disorder that is nearly canceled by a large negative magnetic disorder contribution. By contrast, calculations for bcc Fe show a much larger thermal expansion, consistent with experiment, which is dominated by a large contribution from lattice thermal disorder that is reduced only slightly by a small negative contribution from that of magnetism. These findings give insights into the unusual nature of magnetism and spin-lattice coupling in Invar and Fe, and they support the presented new methodology as a complementary way to investigate thermal properties of magnetic materials.

cond-mat.mtrl-sci↗

arXiv2022

Visualizing bulk and edge photocurrent flow in anisotropic Weyl semimetals

Materials that rectify light into current in their bulk are desired for optoelectronic applications. In inversion-breaking Weyl semimetals, bulk photocurrents may arise due to nonlinear optical processes that are enhanced near the Weyl nodes. However, the photoresponse of these materials is commonly studied by scanning photocurrent microscopy (SPCM), which convolves the effects of photocurrent generation and collection. Here, we directly image the photocurrent flow inside the type-II Weyl semimetals WTe2 and TaIrTe4 using high-sensitivity quantum magnetometry with nitrogen-vacancy center spins. We elucidate an unknown mechanism for bulk photocurrent generation termed the anisotropic photothermoelectric effect (APTE), where unequal thermopowers along different crystal axes drive intricate circulations of photocurrent around the photoexcitation. Using simultaneous SPCM and magnetic imaging at the sample's interior and edges, we visualize how the APTE stimulates the long-range photocurrent collected in our Weyl semimetal devices through the Shockley-Ramo theorem. Our results highlight an overlooked, but widely relevant source of current flow and inspire novel photodetectors using homogeneous materials with anisotropy.

cond-mat.mtrl-sci↗

arXiv2021

The elphbolt ab initio solver for the coupled electron-phonon Boltzmann transport equations

elphbolt is a modern Fortran (2018 standard) code for efficiently solving the coupled electron-phonon Boltzmann transport equations from first principles. Using results from density functional and density functional perturbation theory as inputs, it can calculate the effect of the non-equilibrium phonons on the electronic transport (phonon drag) and non-equilibrium electrons on the phononic transport (electron drag) in a fully self-consistent manner and obeying the constraints mandated by thermodynamics. It can calculate the lattice, charge, and thermoelectric transport coefficients for the temperature gradient and electric fields, and the effect of the mutual electron-phonon drag on these transport properties. The code fully exploits the symmetries of the crystal and the transport-active window to allow the sampling of extremely fine electron and phonon wave vector meshes required for accurately capturing the drag phenomena. The coarray feature of modern Fortran, which offers native and convenient support for parallelization, is utilized. The code is compact, readable, well-documented, and extensible by design.

cond-mat.mtrl-sci↗

arXiv2020

How do defects limit the ultrahigh thermal conductivity of BAs? A first principles study

The promise enabled by BAs high thermal conductivity in power electronics cannot be assessed without taking into account the reduction incurred when doping the material. Using first principles calculations, we determine the thermal conductivity reduction induced by different group IV impurities in BAs as a function of concentration and charge state. We unveil a general trend, where neutral impurities scatter phonons more strongly than the charged ones. $\text{C}_{\text{B}}$ and $\text{Ge}_{\text{As}}$ impurities show by far the weakest phonon scattering and retain BAs $\kappa$ values of over $\sim$ 1000 $\text{W}\cdot\text{K}^{-1}\cdot\text{m}^{-1}$ even up to high densities making them ideal n-type and p-type dopants. Furthermore, going beyond the doping compensation threshold associated to Fermi level pinning triggers observable changes in the thermal conductivity. This informs design considerations on the doping of BAs, and it also suggests a direct way to determine the onset of compensation doping in experimental samples.

cond-mat.mtrl-sci↗

arXiv2020

Exposing the hidden influence of selection rules on phonon-phonon scattering by pressure and temperature tuning

Using ab initio calculations, we show that the hidden influence of selection rules on three-phonon scattering can be exposed through anomalous signatures in the pressure ($P$) and temperature ($T$) dependence of the thermal conductivities, $\kappa$, of certain compounds. Boron phosphide reveals such underlying behavior through an exceptionally sharp initial rise in $\kappa$ with increasing $P$, which may be the steepest of any material, and also a peak and decrease in $\kappa$ at high $P$. These features are in stark contrast to the measured behavior for many solids, and occur at experimentally accessible conditions. Similar anomalous behavior is predicted for silicon carbide and other related materials.

cond-mat.mtrl-sci↗

arXiv2020

Phonon-Phonon Interactions in Strongly Bonded Solids: Selection Rules and Higher-Order Processes

We show that the commonly used lowest-order theory of phonon-phonon interactions frequently fails to accurately describe the anharmonic phonon decay rates and thermal conductivity ($\kappa$), even among strongly bonded crystals. Applying a first principles theory that includes both the lowest-order three-phonon and the higher-order four-phonon processes to seventeen zinc blende semiconductors, we find that the lowest-order theory drastically overestimates the measured $\kappa$ for many of these materials, while inclusion of four-phonon scattering gives significantly improved agreement with measurements. We have identified new selection rules on three-phonon processes that help explain many of these failures in terms of anomalously weak anharmonic phonon decay rates predicted by the lowest-order theory competing with four-phonon processes. We also show that zinc blende compounds containing boron (B), carbon (C) or nitrogen (N) atoms have exceptionally weak four-phonon scattering, much weaker than in compounds that do not contain B, C or N atoms. This new understanding helps explain the ultrahigh $\kappa$ in several technologically important materials like cubic boron arsenide, boron phosphide and silicon carbide. At the same time, it not only makes the possibility of achieving high $\kappa$ in materials without B, C or N atoms unlikely, but it also suggests that it may be necessary to include four-phonon processes in many future studies. Our work gives new insights into the nature of anharmonic processes in solids and demonstrates the broad importance of higher-order phonon-phonon interactions in assessing the thermal properties of materials.

cond-mat.mtrl-sci↗

arXiv2019

Thermodynamic Evidence of Proximity to a Kitaev Spin-Liquid in Ag$_{3}$LiIr$_{2}$O$_{6}$

Kitaev magnets are materials with bond-dependent Ising interactions between localized spins on a honeycomb lattice. Such interactions could lead to a quantum spin-liquid (QSL) ground state at zero temperature. Recent theoretical studies suggest two potential signatures of a QSL at finite temperatures, namely a scaling behavior of thermodynamic quantities in the presence of quenched disorder, and a two-step release of the magnetic entropy. Here, we present both signatures in Ag$_{3}$LiIr$_{2}$O$_{6}$ which is synthesized from $\alpha$-Li$_{2}$IrO$_{3}$ by replacing the inter-layer Li atoms with Ag atoms. In addition, the DC susceptibility data confirm absence of a long-range order, and the AC susceptibility data rule out a spin-glass transition. These observations suggest a closer proximity to the QSL in Ag$_{3}$LiIr$_{2}$O$_{6}$ compared to its parent compound $\alpha$-Li$_{2}$IrO$_{3}$ that orders at 15 K. We discuss an enhanced spin-orbit coupling due to a mixing between silver d and oxygen p orbitals as a potential underlying mechanism.

cond-mat.mtrl-sci↗

arXiv2019

Thermal expansion coefficient and lattice anharmonicity of cubic boron arsenide

Recent measurements of an unusual high thermal conductivity of around 1000 W m-1 K-1 at room temperature in cubic boron arsenide (BAs) confirm predictions from theory and suggest potential applications of this semiconductor compound for thermal management applications. Knowledge of the thermal expansion coefficient and Gr\"uneisen parameter of a material contributes both to the fundamental understanding of its lattice anharmonicity and to assessing its utility as a thermal-management material. However, previous theoretical calculations of the thermal expansion coefficient and Gr\"uneisen parameter of BAs yield inconsistent results. Here we report the linear thermal expansion coefficient of BAs obtained from the X-ray diffraction measurements from 300 K to 773 K. The measurement results are in good agreement with our ab initio calculations that account for atomic interactions up to fifth nearest neighbours. With the measured thermal expansion coefficient and specific heat, a Gr\"uneisen parameter of BAs of 0.84 +/- 0.09 is obtained at 300 K, in excellent agreement with the value of 0.82 calculated from first principles and much lower than prior theoretical results. Our results confirm that BAs exhibits a better thermal expansion coefficient match with commonly used semiconductors than other high-thermal conductivity materials such as diamond and cubic boron nitride.

cond-mat.mtrl-sci↗

arXiv2018

High-Throughput Calculations of Thermal Conductivity in Nanoporous Materials: The Case of Half-Heusler Compounds

Achieving low thermal conductivity and good electrical properties is a crucial condition for thermal energy harvesting materials. Nanostructuring offers a very powerful tool to address both requirements: in nanostructured materials, boundaries preferentially scatter phonons compared to electrons. The search for low-thermal-conductivity nanostructures is typically limited to materials with simple crystal structures, such as silicon, because of the complexity arising from modeling branch- and wave vector- dependent nanoscale heat transport. Using the phonon mean-free-path (MFP) dependent Boltzmann transport equation, a model that overcomes this limitation, we compute thermal transport in 75 nanoporous half-Heusler compounds for different pore sizes. We demonstrate that the optimization of thermal transport in nanostructures should take into account both bulk thermal properties and geometry-dependent phonon suppression, two aspects that are typically engineered separately. In fact, our work predicts that, given a set of bulk materials and a system geometry, the ordering of the thermal conductivity of the nanostructure does not necessarily align with that of the bulk: We show that what dictates thermal transport is the interplay between the bulk MFP distribution and the nanostructuring length scale of the material. Finally, we derive a thermal transport model that enables fast systems screening within large bulk material repositories and a given geometry. Our study motivates the need for a holistic approach to engineering thermal transport and provides a method for high-throughput materials discovery.

cond-mat.mes-hall↗

arXiv2017

Phonon thermal transport in 2H, 4H and 6H silicon carbide from first principles

Silicon carbide (SiC) is a wide band gap semiconductor with a variety of industrial applications. Among its many useful properties is its high thermal conductivity, which makes it advantageous for thermal management applications. In this paper we present \textit{ab initio} calculations of the in-plane and cross-plane thermal conductivities, $\kappa_{\text{in}}$ and $\kappa_{\text{out}}$, of three common hexagonal polytypes of SiC: 2H, 4H and 6H. The phonon Boltzmann transport equation is solved iteratively using as input interatomic force constants determined from density functional theory. Both $\kappa_{\text{in}}$ and $\kappa_{\text{out}}$ decrease with increasing $n$ in $n$H SiC because of additional low-lying optic phonon branches. These optic branches are characterized by low phonon group velocities, and they increase the phase space for phonon-phonon scattering of acoustic modes. Also, for all $n$, $\kappa_{\text{in}}$ is found to be larger than $\kappa_{\text{out}}$ in the temperature range considered. At electron concentrations present in experimental samples, scattering of phonons by electrons is shown to be negligible except well below room temperature where it can lead to a significant reduction of the lattice thermal conductivity. This work highlights the power of \textit{ab initio} approaches in giving quantitative, predictive descriptions of thermal transport in materials. It helps explain the qualitative disagreement that exists among different sets of measured thermal conductivity data and provides information of the relative quality of samples from which measured data was obtained.

cond-mat.mtrl-sci↗

arXiv2016

The Effect of Shallow vs. Deep Level Doping on the Performance of Thermoelectric Materials

It is well known that the efficiency of a good thermoelectric material should be optimized with respect to doping concentration. However, much less attention has been paid to the optimization of the dopant's energy level. Thermoelectric materials doped with shallow levels may experience a dramatic reduction in their figures of merit at high temperatures due to the excitation of minority carriers that reduces the Seebeck coefficient and increases bipolar heat conduction. Doping with deep level impurities can delay the excitation of minority carriers as it requires a higher temperature to ionize all dopants. We find through modeling that, depending on the material type and temperature range of operation, different impurity levels (shallow or deep) will be desired to optimize the efficiency of a thermoelectric material. For different materials, we further clarify where the most preferable position of the impurity level within the band gap falls. Our research provides insights in choosing the most appropriate dopants for a thermoelectric material in order to maximize the device efficiency.

cond-mat.mtrl-sci↗

arXiv2015

Temperature-dependent thermal conductivity in nanoporous materials studied by the Boltzmann Transport Equation

Nanostructured materials exhibit low thermal conductivity because of the additional scattering due to phonon-boundary interactions. As these interactions are highly sensitive to the mean free path (MFP) of a given phonon mode, MFP distributions in nanostructures can be dramatically distorted relative to bulk. Here we calculate the MFP distribution in periodic nanoporous Si for different temperatures, using the recently developed MFP-dependent Boltzmann Transport Equation. After analyzing the relative contribution of each phonon branch to thermal transport in nanoporous Si, we find that at room temperature optical phonons contribute 18 % to heat transport, compared to 5% in bulk Si. Interestingly, we observe a steady thermal conductivity in the nanoporous materials over a temperature range 200 K < T < 300 K, which we attribute to the ballistic transport of acoustic phonons with long intrinsic MFP. These results, which are also consistent with a recent experimental study, shed light on the origin of the reduction of thermal conductivity in nanostructured materials, and could contribute to multiscale heat transport engineering, in which the bulk material and geometry are optimized concurrently.

cond-mat.mtrl-sci↗