arXiv subjects

David D. Awschalom

Publications and source records attributed to David D. Awschalom.

At least 73 records · Page 4Linked to original sources

arXiv2018

Probing spin-phonon interactions in silicon carbide with Gaussian acoustics

Hybrid spin-mechanical systems provide a platform for integrating quantum registers and transducers. Efficient creation and control of such systems require a comprehensive understanding of the individual spin and mechanical components as well as their mutual interactions. Point defects in silicon carbide (SiC) offer long-lived, optically addressable spin registers in a wafer-scale material with low acoustic losses, making them natural candidates for integration with high quality factor mechanical resonators. Here, we show Gaussian focusing of a surface acoustic wave in SiC, characterized by a novel stroboscopic X-ray diffraction imaging technique, which delivers direct, strain amplitude information at nanoscale spatial resolution. Using ab initio calculations, we provide a more complete picture of spin-strain coupling for various defects in SiC with C3v symmetry. This reveals the importance of shear for future device engineering and enhanced spin-mechanical coupling. We demonstrate all-optical detection of acoustic paramagnetic resonance without microwave magnetic fields, relevant to sensing applications. Finally, we show mechanically driven Autler-Townes splittings and magnetically forbidden Rabi oscillations. These results offer a basis for full strain control of three-level spin systems.

quant-ph↗

arXiv2018

Microscale resolution thermal mapping using a flexible platform of patterned quantum sensors

Temperature sensors with micro- and nanoscale spatial resolution have long been explored for their potential to investigate the details of physical systems at an unprecedented scale. In particular, the rapid miniaturization of transistor technology, with the associated steep boost in power density, calls for sensors that accurately monitor heating distributions. Here, we report on a simple and scalable fabrication approach, based on directed self-assembly and transfer printing techniques, to construct arrays of nanodiamonds containing temperature sensitive fluorescent spin defects. The nanoparticles are embedded within a low thermal conductivity matrix that allows for repeated use on a wide range of systems with minimal spurious effects. Additionally, we demonstrate access to a wide spectrum of array parameters ranging from sparser single particle arrays to denser devices with approximately 100 % yield and stronger photoluminescence signal, ideal for temperature measurements. With these we experimentally reconstruct the temperature map of an operating coplanar waveguide to confirm the accuracy of these platforms.

physics.app-ph↗

arXiv2018

Symmetry Breaking of the Persistent Spin Helix in Quantum Transport

We exploit the high-symmetry spin state obtained for equal Rashba and linear Dresselhaus interactions to derive a closed-form expression for the weak localization magnetoconductivity -- the paradigmatic signature of spin-orbit coupling in quantum transport. The small parameter of the theory is the deviation from the symmetry state introduced by the mismatch of the linear terms and by the cubic Dresselhaus term. In this regime, we perform quantum transport experiments in GaAs quantum wells. Top and back gates allow independent tuning of the Rashba and Dresselhaus terms in order to explore the broken-symmetry regime where the formula applies. We present a reliable two-step method to extract all parameters from fits to the new expression, obtaining excellent agreement with recent experiments. This provides experimental confirmation of the new theory, and advances spin-orbit coupling towards a powerful resource in emerging quantum technologies.

cond-mat.mes-hall↗

arXiv2017

Stark Tuning and Electrical Charge State Control of Single Divacancies in Silicon Carbide

Neutrally charged divacancies in silicon carbide (SiC) are paramagnetic color centers whose long coherence times and near-telecom operating wavelengths make them promising for scalable quantum communication technologies compatible with existing fiber optic networks. However, local strain inhomogeneity can randomly perturb their optical transition frequencies, which degrades the indistinguishability of photons emitted from separate defects, and hinders their coupling to optical cavities. Here we show that electric fields can be used to tune the optical transition frequencies of single neutral divacancy defects in 4H-SiC over a range of several GHz via the DC Stark effect. The same technique can also control the charge state of the defect on microsecond timescales, which we use to stabilize unstable or non-neutral divacancies into their neutral charge state. Using fluorescence-based charge state detection, we show both 975 nm and 1130 nm excitation can prepare its neutral charge state with near unity efficiency.

quant-ph↗

arXiv2017

Holonomic Quantum Control by Coherent Optical Excitation in Diamond

Although geometric phases in quantum evolution were historically overlooked, their active control now stimulates strategies for constructing robust quantum technologies. Here, we demonstrate arbitrary single-qubit holonomic gates from a single cycle of non-adiabatic evolution, eliminating the need to concatenate two separate cycles. Our method varies the amplitude, phase, and detuning of a two-tone optical field to control the non-Abelian geometric phase acquired by a nitrogen-vacancy center in diamond over a coherent excitation cycle. We demonstrate the enhanced robustness of detuned gates to excited-state decoherence and provide insights for optimizing fast holonomic control in dissipative quantum systems.

quant-ph↗

arXiv2017

Helicity dependent photocurrent in electrically gated (Bi,Sb)_2Te_3 thin films

Circularly polarized photons are known to generate a directional helicity-dependent photocurrent in three-dimensional topological insulators at room temperature. Surprisingly, the phenomenon is readily observed at photon energies that excite electrons to states far above the spin-momentum locked Dirac cone and the underlying mechanism for the helicity-dependent photocurrent is still not understood. We resolve the puzzle through a comprehensive study of the helicity-dependent photocurrent in (Bi,Sb)_2Te_3 thin films as a function of the incidence angle of the optical excitation, its wavelength, and the gate-tuned chemical potential. Our observations allow us to unambiguously identify the circular photo-galvanic effect as the dominant mechanism for the helicity-dependent photocurrent. Additionally, we use an analytical calculation to relate the directional nature of the photocurrent to asymmetric optical transitions between the topological surface states and bulk bands. The insights we obtain are important for engineering opto-spintronic devices that rely on optical steering of spin and charge currents.

cond-mat.mtrl-sci↗

arXiv2017

Optical charge state control of spin defects in 4H-SiC

Defects in silicon carbide (SiC) have emerged as a favorable platform for optically-active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide enhanced spin-dependent readout and long-term charge stability of the qubits. We investigate this charge state control for two major spin qubits in 4H-SiC, the divacancy (VV) and silicon vacancy (Vsi), obtaining bidirectional optical charge conversion between the bright and dark states of these defects. We measure increased photoluminescence from VV ensembles by up to three orders of magnitude using near-ultraviolet excitation, depending on the substrate, and without degrading the electron spin coherence time. This charge conversion remains stable for hours at cryogenic temperatures, allowing spatial and persistent patterning of the relative charge state populations. We develop a comprehensive model of the defects and optical processes involved, offering a strong basis to improve material design and to develop quantum applications in SiC.

cond-mat.mes-hall↗

arXiv2017

Local optical control of ferromagnetism and chemical potential in a topological insulator

Many proposed experiments involving topological insulators (TIs) require spatial control over time-reversal symmetry and chemical potential. We demonstrate reconfigurable micron-scale optical control of both magnetization (which breaks time-reversal symmetry) and chemical potential in ferromagnetic thin films of Cr-(Bi,Sb)$_2$Te$_3$ grown on SrTiO$_3$. By optically modulating the coercivity of the films, we write and erase arbitrary patterns in their remanent magnetization, which we then image with Kerr microscopy. Additionally, by optically manipulating a space charge layer in the underlying SrTiO$_3$ substrates, we control the local chemical potential of the films. This optical gating effect allows us to write and erase p-n junctions in the films, which we study with photocurrent microscopy. Both effects are persistent and may be patterned and imaged independently on a few-micron scale. Dynamic optical control over both magnetization and chemical potential of a TI may be useful in efforts to understand and control the edge states predicted at magnetic domain walls in quantum anomalous Hall insulators.

cond-mat.mes-hall↗

arXiv2017

Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface

The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a mechanism for high-fidelity spin-to-photon conversion, which is a crucial prerequisite for such technologies, has not yet been demonstrated. Here we demonstrate a high-fidelity spin-to-photon interface in isolated divacancies in epitaxial films of 3C-SiC and 4H-SiC. Our data show that divacancies in 4H-SiC have minimal undesirable spin-mixing, and that the optical linewidths in our current sample are already similar to those of recent remote entanglement demonstrations in other systems. Moreover, we find that 3C-SiC divacancies have millisecond Hahn-echo spin coherence time, which is among the longest measured in a naturally isotopic solid. The presence of defects with these properties in a commercial semiconductor that can be heteroepitaxially grown as a thin film on shows promise for future quantum networks based on SiC defects.

quant-ph↗

arXiv2017

Stretchable persistent spin helices in GaAs quantum wells

The Rashba and Dresselhaus spin-orbit (SO) interactions in 2D electron gases act as effective magnetic fields with momentum-dependent directions, which cause spin decay as the spins undergo arbitrary precessions about these randomly-oriented SO fields due to momentum scattering. Theoretically and experimentally, it has been established that by fine-tuning the Rashba $α$ and Dresselhaus $β$ couplings to equal $\it{fixed}$ strengths $α=β$, the total SO field becomes unidirectional thus rendering the electron spins immune to dephasing due to momentum scattering. A robust persistent spin helix (PSH) has already been experimentally realized at this singular point $α=β$. Here we employ the suppression of weak antilocalization as a sensitive detector for matched SO fields together with a technique that allows for independent electrical control over the SO couplings via top gate voltage $V_T$ and back gate voltage $V_B$. We demonstrate for the first time the gate control of $β$ and the $\it{continuous\,locking}$ of the SO fields at $α=β$, i.e., we are able to vary both $α$ and $β$ controllably and continuously with $V_T$ and $V_B$, while keeping them locked at equal strengths. This makes possible a new concept: "stretchable PSHs", i.e., helical spin patterns with continuously variable pitches $P$ over a wide parameter range. The extracted spin-diffusion lengths and decay times as a function of $α/β$ show a significant enhancement near $α/β=1$. Since within the continuous-locking regime quantum transport is diffusive (2D) for charge while ballistic (1D) for spin and thus amenable to coherent spin control, stretchable PSHs could provide the platform for the much heralded long-distance communication $\sim 8 - 25$ $μ$m between solid-state spin qubits.

cond-mat.mes-hall↗

arXiv2017

Hybrid nanodiamond-YIG systems for efficient quantum information processing and nanoscale sensing

The nitrogen-vacancy (NV) center in diamond has been extensively studied in recent years for its remarkable quantum coherence properties that make it an ideal candidate for room temperature quantum computing and quantum sensing schemes. However, these schemes rely on spin-spin dipolar interactions, which require the NV centers to be within a few nanometers from each other while still separately addressable, or to be in close proximity of the diamond surface, where their coherence properties significantly degrade. Here we demonstrate a method for overcoming these limitations using a hybrid yttrium iron garnet (YIG)-nanodiamond quantum system constructed with the help of directed assembly and transfer printing techniques. We show that YIG spin-waves can amplify the oscillating field of a microwave source by more than two orders of magnitude and efficiently mediate its coherent interactions with an NV center ensemble. These results demonstrate that spin-waves in ferromagnets can be used as quantum buses for enhanced, long-range qubit interactions, paving the way to ultra-efficient manipulation and coupling of solid state defects in hybrid quantum networks and sensing devices.

quant-ph↗

arXiv2016

Quantum decoherence dynamics of divacancy spins in silicon carbide

Long coherence times are key to the performance of quantum bits (qubits). Here, we experimentally and theoretically show that the Hahn-echo coherence time (T2) of electron spins associated with divacancy defects in 4H-SiC reaches 1.3 ms, one of the longest T2 times of an electron spin in a naturally isotopic crystal. Using a first-principles microscopic quantum-bath model, we find that two factors determine the unusually robust coherence. First, in the presence of moderate magnetic fields (300 G and above), the 29Si and 13C paramagnetic nuclear spin baths are decoupled. In addition, because SiC is a binary crystal, homo-nuclear spin pairs are both diluted and forbidden from forming strongly coupled, nearest-neighbor spin pairs. Longer neighbor distances result in fewer nuclear spin flip-flops, a less fluctuating intra-crystalline magnetic environment, and thus a longer T2 time. Our results point to polyatomic crystals as promising hosts for coherent qubits in the solid state.

cond-mat.mes-hall↗

arXiv2016

Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN

Spins bound to point defects are increasingly viewed as an important resource for solid-state implementations of quantum information technologies. In particular, there is a growing interest in the identification of new classes of defect spin that can be controlled optically. Here we demonstrate ensemble optical spin polarization and optically detected magnetic resonance (ODMR) of the S = 1 electronic ground state of chromium (Cr4+) impurities in silicon carbide (SiC) and gallium nitride (GaN). Spin polarization is made possible by the narrow optical linewidths of these ensembles (< 8.5 GHz), which are similar in magnitude to the ground state zero-field spin splitting energies of the ions at liquid helium temperatures. We therefore are able to optically resolve individual spin sublevels within the ensembles at low magnetic fields using resonant excitation from a cavity-stabilized, narrow-linewidth laser. Additionally, these near-infrared emitters possess exceptionally weak phonon sidebands, ensuring that > 73% of the overall optical emission is contained with the defects zero-phonon lines. These characteristics make this semiconductor-based, transition metal impurity system a promising target for further study in the ongoing effort to integrate optically active quantum states within common optoelectronic materials.

cond-mat.mes-hall↗

arXiv2016

Accelerated quantum control using superadiabatic dynamics in a solid-state lambda system

Adiabatic evolutions find widespread utility in applications to quantum state engineering, geometric quantum computation, and quantum simulation. Although offering robustness to experimental imperfections, adiabatic processes are susceptible to decoherence due to their long evolution time. A general strategy termed "shortcuts to adiabaticity" (STA) aims to remedy this vulnerability by designing fast dynamics to reproduce the results of slow, adiabatic evolutions. Here, we implement a novel STA technique known as "superadiabatic transitionless driving" (SATD) to speed up stimulated Raman adiabatic passage (STIRAP) in a solid-state lambda (Λ) system. Utilizing optical transitions to a dissipative excited state in the nitrogen-vacancy (NV) center in diamond, we demonstrate the accelerated performance of different shortcut trajectories for population transfer and for the initialization and transfer of coherent superpositions. We reveal that SATD protocols exhibit robustness to dissipation and experimental uncertainty, and can be optimized when these effects are present. These results motivate STA as a promising tool for controlling open quantum systems comprising individual or hybrid nanomechanical, superconducting, and photonic elements in the solid state.

cond-mat.mes-hall↗

arXiv2016

High fidelity bi-directional nuclear qubit initialization in SiC

Dynamic nuclear polarization (DNP) is an attractive method for initializing nuclear spins that are strongly coupled to optically active electron spins because it functions at room temperature and does not require strong magnetic fields. In this Letter, we demonstrate that DNP, with near-unity polarization efficiency, can be generally realized in weakly coupled hybrid registers, and furthermore that the nuclear spin polarization can be completely reversed with only sub-Gauss magnetic field variations. This mechanism offers new avenues for DNP-based sensors and radio-frequency free control of nuclear qubits.

cond-mat.mes-hall↗

arXiv2015

Deterministic formation of highly coherent nitrogen-vacancy centers using a focused electron irradiation technique

We demonstrate fully three-dimensional and patterned localization of nitrogen-vacancy (NV) centers in diamond with coherence times in excess of 1 ms. Nitrogen δ-doping during CVD diamond growth vertically confines nitrogen to 4 nm while electron irradiation with a transmission electron microscope (TEM) laterally confines vacancies to less than 1 μm. We characterize the effects of electron energy and dose on NV formation. Importantly, our technique enables the formation of reliably high-quality NV centers inside diamond nanostructures, with applications in quantum information and sensing.

cond-mat.mes-hall↗

arXiv2015

Cavity-enhanced measurements of defect spins in silicon carbide

The identification of new solid-state defect qubit candidates in widely used semiconductors has the potential to enable the use of nanofabricated devices for enhanced qubit measurement and control operations. In particular, the recent discovery of optically active spin states in silicon carbide thin films offers a scalable route for incorporating defect qubits into on-chip photonic devices. Here we demonstrate the use of 3C silicon carbide photonic crystal cavities for enhanced excitation of color center defect spin ensembles in order to increase measured photoluminescence signal count rates, optically detected magnetic resonance signal intensities, and optical spin initialization rates. We observe up to a factor of 30 increase in the photoluminescence and ODMR signals from Ky5 color centers excited by cavity resonant excitation and increase the rate of ground-state spin initialization by approximately a factor of two. Furthermore, we show that the small excitation mode volume and enhanced excitation and collection efficiencies provided by the structures can be used to study inhomogeneous broadening in defect qubit ensembles. These results highlight some of the benefits that nanofabricated devices offer for engineering the local photonic environment of color center defect qubits to enable applications in quantum information and sensing.

cond-mat.mes-hall↗

arXiv2015

Theoretical model of the dynamic spin polarization of nuclei coupled to paramagnetic point defects in diamond and silicon carbide

Dynamic nuclear spin polarization (DNP) mediated by paramagnetic point defects in semiconductors is a key resource for both initializing nuclear quantum memories and producing nuclear hyperpolarization. DNP is therefore an important process in the field of quantum-information processing, sensitivity-enhanced nuclear magnetic resonance, and nuclear-spin-based spintronics. DNP based on optical pumping of point defects has been demonstrated by using the electron spin of nitrogen-vacancy (NV) center in diamond, and more recently, by using divacancy and related defect spins in hexagonal silicon carbide (SiC). Here, we describe a general model for these optical DNP processes that allows the effects of many microscopic processes to be integrated. Applying this theory, we gain a deeper insight into dynamic nuclear spin polarization and the physics of diamond and SiC defects. Our results are in good agreement with experimental observations and provide a detailed and unified understanding. In particular, our findings show that the defects' electron spin coherence times and excited state lifetimes are crucial factors in the entire DNP process.

cond-mat.mes-hall↗