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David Eon

Publications and source records attributed to David Eon.

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Observation of narrow-band $\gamma$ radiation from a boron-doped diamond superlattice with an 855 MeV electron beam

We report the first observation of narrow band 1.3 MeV $\gamma$ radiation from a crystalline diamond micro-undulator. A diamond superlattice was grown with a periodical varying boron doping profile. Four sinusoidally deformed (110) periods resulted with a period length of 5.0 $\mu$m and an amplitude of 0.098 nm. A channeling experiment was performed with the 855 MeV electron beam of the Mainz Microtron MAMI accelerator facility. A clear peak was detected with a large sodium iodide scintillation detector close to the expected photon energy of 1.28 MeV. Key characteristics of the peak, including photon energy, width and intensity, were reproduced fairly well by Monte-Carlo simulation calculations. Based on the latter, optimized boron doping profiles were designed for a hypothetical 3 GeV electron beam, enabling preparation of a highly directional $\gamma$-ray beam with a photon energy of 14.5 MeV. The predicted spectral bandwidth is 13\%, however, with a high energy continuum tail. The on-target photon flux at a beam current of 100 $\mu$A would be about $10^{12}$/s.

physics.ins-det

Potential barrier heights at metal on oxygen-terminated diamond interfaces

Electrical properties of metal-semiconductor (M/SC) and metal/oxide/SC structures built with Zr or ZrO\_2 deposited on oxygen-terminated surfaces of (001)-oriented diamond films, comprising a stack of lightly p-doped diamond on a heavily doped layer itself homoepitaxially grown on a Ib substrate, are investigated experimentally and compared to different models. In Schottky barrier diodes, the interfacial oxide layer evidenced by high resolution transmission electron microscopy and electron energy losses spectroscopy before and after annealing, and barrier height inhomogeneities accounts for the measured electrical characteristics until flat bands are reached, in accordance with a model which generalizes that of R.T. Tung [Phys. Rev. B 45, 13509 (1992)] and permits to extract physically meaningful parameters of the three kinds of interface: (a) unannealed ones; (b) annealed at 350{\textdegree}C; (c) annealed at 450{\textdegree}C, with characteristic barrier heights of 2.2-2.5 V in case (a) while as low as 0.96 V in case (c). Possible models of potential barriers for several metals deposited on well defined oxygen-terminated diamond surfaces are discussed and compared to experimental data. It is concluded that interface dipoles of several kinds present at these compound interfaces and their chemical evolution due to annealing are the suitable ingredients able to account for the Mott-Schottky behavior when the effect of the metal work function is ignored, and to justify the reverted slope observed regarding metal work function, in contrast to the trend always reported for all other metal-semiconductor interfaces.

cond-mat.mtrl-sci