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David G. Cahill

Publications and source records attributed to David G. Cahill.

40 records · Page 3Linked to original sources
arXiv2010

Reliably Counting Atomic Planes of Few-Layer Graphene (n>4)

We demonstrate a reliable technique for counting atomic planes (n) of few-layer graphene (FLG) on SiO2/Si substrates by Raman spectroscopy. Our approach is based on measuring the ratio of the integrated intensity of the G graphene peak and the optical phonon peak of Si, I(G)/I(Si), and is particularly useful in the range n>4 where few methods exist. We compare our results with atomic force microscopy (AFM) measurements and Fresnel equation calculations. Lastly, we apply our method to unambiguously identify n of FLG devices and find that the mobility (~2000 cm2 V-1 s-1) is independent of layer thickness for n>4.

cond-mat.mes-hall↗
arXiv2003

Formation and annihilation of nanocavities during keV ion irradiation of Ge

Nanocavities in Ge(111) created by 5 keV Xe ion irradiation are characterized by ex situ transmission electron microscopy and Rutherford backscattering spectrometry. Nanocavities nucleate near the surface and then undergo thermal migration. Nanocavities with average diameter of 10 nm and areal density of 5.1 x 10-3 nm-2 are observed at 773 K, while nanocavities with average diameter of 2.9 nm and areal density of 3.1 x 10-3 nm-2 are observed at 673 K. The estimated Xe gas pressure inside the nanocavities is 0.035 GPa at 773 K, much smaller than the estimated equilibrium pressure 0.38 GPa. This result suggests that the nanocavities grow beyond equilibrium size at 773 K. The nanocavities are annihilated at the surface to form surface pits by the interaction of displacement cascades of keV Xe ions with the nanocavities. These pits are characterized by in situ scanning tunneling microscopy. Pits are created on Ge(111) and Ge(001) at temperatures ~ 523-578 K by keV Xe ions even when less than a bilayer (monolayer) of surface material is removed.

cond-mat.mtrl-sci↗
arXiv2000

Thermal conductivity of amorphous carbon thin films

Thermal conductivities $Λ$ of amorphous carbon thin films are measured in the temperatures range 80--400 K using the $3ω$ method. Sample films range from soft a-C:H prepared by remote-plasma deposition ($Λ= 0.20$ W m$^{-1}$ K$^{-1}$ at room temperature) to amorphous diamond with a large fraction of $sp^3$ bonded carbon deposited from a filtered-arc source ($Λ= 2.2$ W m$^{-1}$ K$^{-1}$). Effective-medium theory provides a phenomenological description of the variation of conductivity with mass density. The thermal conductivities are in good agreement with the minimum thermal conductivity calculated from the measured atomic density and longitudinal speed of sound.

cond-mat.mtrl-sci↗