arXiv subjects

David Gong

Publications and source records attributed to David Gong.

2 recordsLinked to original sources

arXiv2026

Visualizing orbital magnetism in electron doped rhombohedral multilayer graphene

Electron doped rhombohedral multilayer graphene at high displacement field features an exceptionally flat band minimum with near-ideal quantum geometry. Experiments in this regime observe the formation of a 'quarter metal,' in which the electron liquid condenses into a single spin- and valley flavor. Remarkably, recent experiments have found a zero resistance state in the same region of the density- and displacement-field-tuned parameter space, attributed to the formation of a chiral superconductor from an orbitally ferromagnetic normal state. Here, we use nanoSQUID-on-tip magnetometry to map the orbital magnetization of electron-doped rhombohedral graphene devices ranging in thickness between 3 and 15 layers. Magnetization within the quarter metal phases peaks at finite density, consistent with concentration of the Berry curvature in a finite-momentum 'ring of fire'. Correlating transport and local magnetometry data in a superconducting tetralayer sample reveals a finite orbital ferromagnetic moment, providing direct evidence of valley polarization in the superconducting ground state. We further show that widely observed stochastic switching of the resistivity in both metallic and superconducting regimes arises from a density-tuned sign change in the valley-resolved total magnetic moment. This leads to the formation of metastable magnetic domains under typical gate control sequences and can also be harnessed for electric-field controlled switching of the magnetization across the entire device. Finally, high resolution measurements of the magnetization across a superconducting transition allow us to put an upper bound on the 'condensation magnetization' of 0.1 Bohr magneton per carrier, placing a strong quantitative restriction on theoretical models for ferromagnetic superconductivity.

cond-mat.mes-hall↗

arXiv2026

Imaging flat band electron hydrodynamics in biased bilayer graphene

Hydrodynamic electron transport arises when carrier kinetics are dominated by interelectron collisions rather than the relaxation of momentum out of the electron system. In recent years, signatures of electron hydrodynamics have been reported in graphene devices owing to the low disorder and weak electron-phonon coupling. However, these experiments have been performed in regimes where the carrier mass is light, and the electron-electron collision length--though smaller than corresponding lengths for phonon or impurity scattering--remains large in absolute terms, typically several hundred nanometers. This restricts hydrodynamic transport phenomena to large length scales, limiting miniaturization of devices based on hydrodynamic flow. The advent of dual-gated rhombohedral graphene multilayers introduces a new route toward enhanced hydrodynamic behavior via their large--and tunable--effective mass. Here, we employ a scanning superconducting magnetic sensor to image local current flow in dual-gated bilayer graphene. Exploiting a sample geometry sensitive to both laminar and vortical flow, we identify three distinct transport regimes--ballistic, hydrodynamic, and diffusive--across the full phase space spanned by carrier density and displacement field. The strongest hydrodynamic transport is observed in the flat band regime, where fitting our results to a unified Boltzmann transport model reveals the electron-electron scattering length to be comparable to the Fermi wavelength of ~50 nm. High-current measurements, meanwhile, reveal striking nonlinearities in the flow pattern. Our results pave the way for miniaturized electronic devices based on linear and nonlinear electron hydrodynamics.

cond-mat.mes-hall↗