arXiv subjects

David J. Abramovitch

Publications and source records attributed to David J. Abramovitch.

6 recordsLinked to original sources

arXiv2026

Predicting electron-phonon coupling and electronic transport at the moiré scale in twisted bilayer graphene

First-principles calculations can accurately describe electron-phonon (e-ph) interactions and electronic transport in a wide range of materials, but are currently limited to unit cells with up to $\sim$100 atoms due to computational cost. Here, we develop an atomistic electronic potential with Holstein- and Peierls-like terms for modeling e-ph interactions and phonon-limited electronic transport that enables the study of moiré systems with thousands of atoms per unit cell. This method can accurately reproduce first-principles e-ph coupling and resistivity in graphene and large-angle twisted bilayer graphene (TBG). Using this approach, we study TBG over a range of twist angles down to 1.6$^\circ$ (5044-atom unit cell), and report the evolution of e-ph interactions and phonon-limited resistivity with twist angle. The predicted resistivity increases by two orders of magnitude between 13.2$^\circ$ and 1.6$^\circ$, driven by the progressive reduction of the electronic energy scale. Our calculations can predict key experimental trends in 2.0$^\circ$ and 1.6$^\circ$ TBG, including the resistivity and its dependence on temperature and band filling. Our work establishes a scalable approach for quantitative studies of e-ph interactions and transport in moiré materials and other systems with previously inaccessible length scales.

cond-mat.mtrl-sci↗

arXiv2025

Electron-Phonon Coupling in Correlated Metals: A Dynamical Mean-Field Theory Study

Strong electron-electron interactions are known to significantly modify the electron-phonon coupling relative to the predictions of density functional theory, but this effect is challenging to calculate with realistic theories of strongly correlated materials. Here we define and calculate a version of the EPC applicable beyond band theory by combining first principles density functional theory plus dynamical mean-field theory with finite difference phonon perturbations, presenting results for several representative phonon modes in two materials of interest. In the three-orbital correlated metal SrVO$_3$, we find that intra-V-$t_{2g}$ band correlation significantly increases the coupling of these electrons to a Jahn-Teller phonon mode that splits the degenerate orbital energies, while slightly reducing the coupling associated with a breathing phonon that couples to the charge on each V atom. In the infinite layer cuprate CaCuO$_2$, we find that local correlation within the $d_{x^2-y^2}$ orbital derived band has a modest effect on coupling of near-Fermi surface electrons to optical breathing modes. In both cases, the interaction correction to the electron-phonon coupling predicted by dynamical mean-field theory has a significant dependence on the electronic frequency, arising from a lattice-distortion dependence of the correlated electron dynamics, showing the inadequacy of the simple picture in which correlations change static local susceptibilities. We also show that the electron-phonon scattering and phonon lifetimes associated with these phonon modes are modified by the electronic correlation. Our findings shed light on the material- and mode-specific role of dynamical electronic correlation in electron-phonon coupling and highlight the importance of developing efficient computational methods for treating electron-phonon coupling in correlated materials.

cond-mat.str-el↗

arXiv2025

Respective Roles of Electron-Phonon and Electron-Electron Interactions in the Transport and Quasiparticle Properties of SrVO$_3$

The spectral and transport properties of strongly correlated metals, such as SrVO$_3$ (SVO), are widely attributed to electron-electron ($e$-$e$) interactions, with lattice vibrations (phonons) playing a secondary role. Here, using first-principles electron-phonon ($e$-ph) and dynamical mean field theory calculations, we show that $e$-ph interactions play an essential role in SVO: they govern the electron scattering and resistivity in a wide temperature range above 30 K, and induce an experimentally observed kink in the spectral function. In contrast, the $e$-$e$ interactions control quasiparticle renormalizations and low temperature transport, and enhance the $e$-ph coupling. We clarify the origin of the near $T^2$ temperature dependence of the resistivity by analyzing the $e$-$e$ and $e$-ph limited transport regimes. Our work disentangles the electronic and lattice degrees of freedom in a prototypical correlated metal, revealing the dominant role of $e$-ph interactions in SVO.

cond-mat.mtrl-sci↗

arXiv2023

Correlated Anharmonicity and Dynamic Disorder Control Carrier Transport in Halide Perovskites

Halide pervoskites are an important class of semiconducting materials which hold great promise for optoelectronic applications. In this work we investigate the relationship between vibrational anharmonicity and dynamic disorder in this class of solids. Via a multi-scale model parameterized from first-principles calculations, we demonstrate that the non-Gaussian lattice motion in halide perovskites is microscopically connected to the dynamic disorder of overlap fluctuations among electronic states. This connection allows us to rationalize the emergent differences in temperature-dependent mobilities of prototypical MAPbI$_3$ and MAPbBr$_3$ compounds across structural phase-transitions, in agreement with experimental findings. Our analysis suggests that the details of vibrational anharmonicity and dynamic disorder can complement known predictors of electronic conductivity and can provide structure-property guidelines for the tuning of carrier transport characteristics in anharmonic semiconductors.

cond-mat.mtrl-sci↗

arXiv2023

Combining Electron-Phonon and Dynamical Mean-Field Theory Calculations of Correlated Materials: Transport in the Correlated Metal Sr$_2$RuO$_4$

Electron-electron ($e$-$e$) and electron-phonon ($e$-ph) interactions are challenging to describe in correlated materials, where their joint effects govern unconventional transport, phase transitions, and superconductivity. Here we combine first-principles $e$-ph calculations with dynamical mean field theory (DMFT) as a step toward a unified description of $e$-$e$ and $e$-ph interactions in correlated materials. We compute the $e$-ph self-energy using the DMFT electron Green's function, and combine it with the $e$-$e$ self-energy from DMFT to obtain a Green's function including both interactions. This approach captures the renormalization of quasiparticle dispersion and spectral weight on equal footing. Using our method, we study the $e$-ph and $e$-$e$ contributions to the resistivity and spectral functions in the correlated metal Sr$_2$RuO$_4$. In this material, our results show that $e$-$e$ interactions dominate transport and spectral broadening in the temperature range we study (50$-$310~K), while $e$-ph interactions are relatively weak and account for only $\sim$10\% of the experimental resistivity. We also compute effective scattering rates, and find that the $e$-$e$ interactions result in scattering several times greater than the Planckian value $k_BT$, whereas $e$-ph interactions are associated with scattering rates lower than $k_BT$. Our work demonstrates a first-principles approach to combine electron dynamical correlations from DMFT with $e$-ph interactions in a consistent way, advancing quantitative studies of correlated materials.

cond-mat.mtrl-sci↗

arXiv2021

Thermal fluctuations and carrier localization induced by dynamic disorder in MAPbI3 described by a first-principles based tight-binding model

Halide perovskites are strongly influenced by large amplitude anharmonic lattice fluctuations at room temperature. We develop a tight binding model for dynamically disordered MAPbI$_3$ based on density functional theory (DFT) calculations to calculate electronic structure for finite temperature crystal structures at the length scale of thermal disorder and carrier localization. The model predicts individual Hamiltonian matrix elements and band structures with high accuracy, owing to the inclusion of additional matrix elements and descriptors for non-Coulombic interactions. We apply this model to electronic structure at length and time scales inaccessible to first principles methods, finding an increase in band gap, carrier mass, and the sub-picosecond fluctuations in these quantities with increasing temperature as well as the onset of carrier localization in large supercells induced by thermal disorder at 300 K. We identify the length scale $L^*= 5$ nm as the onset of localization in the electronic structure, associated with associated with decreasing band edge fluctuations, increasing carrier mass, and Rashba splitting approaching zero.

cond-mat.mtrl-sci↗