SearcharxivSearch

arXiv subjects

David Lynn

Publications and source records attributed to David Lynn.

4 recordsLinked to original sources

Silicon pinhole strip defects and their impact on ATLAS Inner Tracker HV current measurement

In preparation for the High-Luminsoity LHC (HL-LHC), the ATLAS detector will undergo major detector upgrades, including the replacement of the current Inner Detector with the new all-silicon Inner Tracker (ITk). The ITk consists of a pixel detector close to the beamline surrounded by a large-area strip detector. During detector production, the electrical properties of silicon sensors and readout electronics must be characterized through a series of quality control (QC) and quality assurance tests. These tests ensure any defect is captured at the earliest possible stage. One such defect, called a pinhole, occurs when the strip implant and the metal readout electrode are shorted through the intermediary dielectric layer. Notably, the introduction of pinholes during module assembly and pinhole effects on completed modules, especially on leakage current measurement circuitry, have never been studied. In this paper, we investigate the effect of such connections on the sensor leakage current measurements of completed modules and introduce new ways to locate pinholed strips. With minor modifications to testing procedures, such defects are shown not to impede module testing or performance.

physics.ins-det

Evaluation of Radiation Hardness of High-Voltage Silicon Vertical JFETs

In the future ATLAS Inner Tracker, each silicon strip module will be equipped with a switch able to separate the high voltage supply from the sensor in case the latter becomes faulty. The switch, placed in between the HV supply and the sensor, needs to sustain a high voltage in its OFF state, to offer a low resistance path for the sensor leakage current in the ON state, and be radiation hard up to 1.2e15 neq/cm2 along with other requirements. While GaN JFETs have been selected as suitable rad-hard switch, a silicon vertical HV-JFET was developed by Brookhaven National Laboratory as an alternative option. Pre-irradiation results showed the functionality of the device and proved that the silicon HV-JFET satisfied the pre-irradiation requirements for the switch. To assess its suitability after irradiation, a few p-type HV-JFETs have been neutron irradiated at Jozef Stefan Institute (JSI, Ljubljana, Slovenia). This paper reports the static characterization of these irradiated devices and the TCAD numerical simulations used to get an insight of the physics governing the post-irradiation behaviour.

physics.ins-det

GAVIP: A Platform for Gaia Data Analysis

Gaia is a major European Space Agency (ESA) astrophysics mission designed to map and analyse 10$^9$ stars, ultimately generating more than 1 PetaByte of data products. As Gaia data becomes publicly available and reaches a wider audience, there is an increasing need to facilitate the further use of Gaia products without needing to download large datasets. The Gaia Added Value Interface Platform (GAVIP) is designed to address this challenge by providing an innovative platform within which scientists can submit and deploy code, packaged as "Added Value Interfaces" (AVIs), which will be executed close to the data. Deployed AVIs and associated outputs may also be made available to other GAVIP platform users, thus providing a mechanism for scientific experiment reproducibility. This paper describes the capabilities and features of GAVIP.

astro-ph.IM

Rad-hard vertical JFET switch for the HV-MUX system of the ATLAS upgrade Inner Tracker

This work presents a new silicon vertical JFET (V-JFET) device, based on the trenched 3D-detector technology developed at IMB-CNM, to be used as switches for the High-Voltage powering scheme of the ATLAS upgrade Inner Tracker. The optimization of the device characteristics is performed by 2D and 3D TCAD simulations. Special attention has been paid to the on-resistance and the switch-off and breakdown voltages to meet the specific requirements of the system. In addition, a set of parameter values has been extracted from the simulated curves to implement a SPICE model of the proposed V-JFET transistor. As these devices are expected to operate under very high radiation conditions during the whole experiment life-time, a study of the radiation damage effects and the expected degradation on the device performance is also presented at the end of the paper.

physics.ins-det