arXiv subjects

David M. -T. Kuo

Publications and source records attributed to David M. -T. Kuo.

At least 19 recordsLinked to original sources

arXiv2015

Thermoelectric effects of quantum dot arrays embedded in nanowires

The thermoelectric properties of quantum dot arrays (QDAs) embedded in nanowires connected to electrodes are studied theoretically in the Coulomb blockade regime. A Hurbbard-Anderson model is used to simulate the electronic contribution to thermoelectric proper- ties of a QDA junction system. The electrical conductance, Seebeck coefficient, and electron thermal conductance are calculated by both the Keldysh Green function method and the mean-field approach. The phonon thermal conductivities are calculated by using the equation of phonon radiative transfer method. In the Coulomb blockade regime the electron thermal conductance is much smaller than the phonon thermal conductance. Therefore, the optimal figure of merit (ZT) can be enhanced by increasing thermal power and decreasing phonon thermal conductance simultaneously. We found that it is possible to obtain ZT value of InGaAs/GaAs QDAs embedded in nanowires larger than one at room temperature.

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arXiv2013

Tunneling Current Spectra of a Metal Core/Semiconductor Shell Quantum Dot Molecule

The transport properties of a metal core/semiconductor shell quantum dot molecule (QDM) embedded in a matrix connected to metallic electrodes are theoretically studied in the framework of Keldysh Green function technique. The effects of the electron plasmon interactions (EPIs) on the tunneling current spectra of QDM are examined. The energy levels of the QDs, intradot and interdot Coulomb interactions, electron interdot hopping strengths, and tunneling rates of QDs are renormalized by the EPIs. The differential conductance spectra show peaks arising from the plasmon assisted tunneling process, intradot and interdot Coulomb interactions, and coherent tunneling between the QDs.

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arXiv2013

Thermoelectric Properties of a Semiconductor Quantum Dot Chain Connected to Metallic Electrodes

The thermoelectric properties of a semiconduct quantum dot chain (SQDC) connected to metallic electrodes are theoretically investigated in the Coulomb blockade regime. An extended Hubbard model is employed to simulate the SQDC system consisted of {\color{blue}N=2,3,4, and 5} quantum dots (QDs). The charge and heat currents are calculated in the framework of Keldysh Green's function technique. We obtained a closed-form Landauer expression for the transmission coefficient of the SQDC system with arbitrary number of QDs by using the method beyond mean-field theory. The electrical conductance ($G_e$), Seebeck coefficient (S), thermal conductance, and figure of merit (ZT) are numerically calculated and analyzed in the linear response regime. When thermal conductance is dominated by phonon carriers, the optimization of ZT is determined by the power factor ($pF=S^2G_e$). We find that the optimization of ZT value favors the following conditions:(1) QDs with low energy level fluctuations, (2) QD energy levels lie above the Fermi level of electrodes, (3) $Γ< t_c \ll U_0$, where $t_c$, $U_0$, and $Γ$ are electron interdot hopping strength, on-site electron Coulomb interaction, and tunneling rate, respectively, and (4) $Γ_L=Γ_R$ with $Γ_L+Γ_R$ kept constant, where $Γ_L (Γ_R)$ is the left (right) tunneling rate. It is predicted that high ZT values can be achieved by tailoring above conditions.

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arXiv2012

Effects of interdot hopping and Coulomb blockade on the thermoelectric properties of serially coupled quantum dots

We have theoretically studied the thermoelectric properties of serially coupled quantum dots (SCQD) embedded in an insulator matrix connected to metallic electrodes. In the framework of Keldysh Green's function technique, the Landauer formula of transmission factor is obtained by using the equation of motion method. Based on such analytical expressions of charge and heat currents, we calculate the electrical conductance, Seebeck coefficient, electron thermal conductance and figure of merit (ZT) of SCQD in the linear response regime. The effects of electron Coulomb interactions on the reduction and enhancement of ZT are analyzed. We demonstrate that ZT is not a monotonic increasing function of interdot electron hopping strength ($t_c$). We also show that in the absence of phonon thermal conductance, SCQD can reach the Carnot efficiency as $t_c$ approaches zero.

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arXiv2012

Current Rectification and Seebeck Coefficient of Serially Coupled Double Quantum Dots

The transport properties of serially coupled quantum dots (SCQDs) embedded in a matrix connected to metallic electrodes are theoretically studied in the linear and nonlinear regimes. The current rectification and negative differential conductance of SCQDs under the Pauli spin blockade condition are attributed to the combination of bias-direction dependent probability weight and off-resonant energy levels yielded by the applied bias across the junctions. We observe the spin-polarization current rectification under the Zeeman effect. The maximum spin-polarization current occurs in the forward bias regime. Such behavior is different from the charge current rectification. Finally, the Seebeck coefficient ($S$)of SCQDs is calculated and analyzed in the cases without and with electron phonon interactions. The application of SCQDs as a temperature detector is discussed on the basis of the nonlinear behavior of $S$ with respect to temperature difference across the junction.

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arXiv2012

Bistability in the Tunnelling Current through a Ring of $N$ Coupled Quantum Dots

We study bistability in the electron transport through a ring of N coupled quantum dots with two orbitals in each dot. One orbital is localized (called b orbital) and coupling of the b orbitals in any two dots is negligible; the other is delocalized in the plane of the ring (called d orbital), due to coupling of the d orbitals in the neighboring dots, as described by a tight-binding model. The d orbitals thereby form a band with finite width. The b and d orbitals are connected to the source and drain electrodes with a voltage bias V, allowing the electron tunnelling. Tunnelling current is calculated by using a nonequilibrium Green function method recently developed to treat nanostructures with multiple energy levels. We find a bistable effect in the tunnelling current as a function of bias V, when the size N>50; this effect scales with the size N and becomes sizable at N~100. The temperature effect on bistability is also discussed. In comparison, mean-field treatment tends to overestimate the bistable effect.

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arXiv2011

Bipolar thermoelectric effect in a srially coupled quantum dot system

The Seebeck coefficient (S) of a serially coupled quantum dot (SCQD) junction system is theoretically studied via a two-level Anderson model. A change of sign in S with respect to temperature is found, which arises from the competition between tunneling currents due to electrons and holes (i.e, bipolar tunneling effect). The change of sign in S implies that one can vary the equilibrium temperature to produce thermoelectric current in either the forward or reverse direction, leading to a bipolar thermoelectric effect. For the case of two parallel SCQDs, we also observe the oscillatory behavior of S with respect to temperature.

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arXiv2011

Theory of spin blockade, charge ratchet effect, and thermoelectrical behavior in serially coupled quantum-dot system

The charge transport of a serially coupled quantum dots (SCQD) connected to the metallic electrodes is theoretically investigated in the Coulomb blockade regime. A closed-form expression for the tunneling current of SCQD in the {\color{red} weak interdot hopping} limit is obtained by solving an extended two-site Hubbard model via the Green's function method. We use this expression to investigate spin current rectification, negative differential conductance, and coherent tunneling in the nonlinear response regime. The current rectification arising from the space symmetry breaking of SCQD is suppressed by increasing temperature. The calculation of SCQD is extended to the case of multiple parallel SCQDs for studying the charge ratchet effect and SCQD with multiple levels. In the linear response regime, the functionalities of spin filter and low-temperature current filter are demonstrated to coexist in this system. It is further demonstrated that two-electron spin singlet and triplet states can be readily resolved from the measurement of Seebeck coefficient rather than that of electrical conductance.

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arXiv2010

Thermoelectric and thermal rectification properties of quantum dot junctions

The electrical conductance, thermal conductance, thermal power and figure of merit (ZT) of semiconductor quantum dots (QDs) embedded into an insulator matrix connected with metallic electrodes are theoretically investigated in the Coulomb blockade regime. The multilevel Anderson model is used to simulate the multiple QDs junction system. The charge and heat currents in the sequential tunneling process are calculated by the Keldysh Green function technique. In the linear response regime the ZT values are still very impressive in the small tunneling rates case, although the effect of electron Coulomb interaction on ZT is significant. In the nonlinear response regime, we have demonstrated that the thermal rectification behavior can be observed for the coupled QDs system, where the very strong asymmetrical coupling between the dots and electrodes, large energy level separation between dots and strong interdot Coulomb interactions are required.

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arXiv2010

Thermal rectification properties of multiple-quantum-dot junctions

It is illustrated that semiconductor quantum dots (QDs) embedded into an insulating matrix connected with metallic electrodes and some vacuum space can lead to significant thermal rectification effect. A multilevel Anderson model is used to investigate the thermal rectification properties of the multiple-QD junction. The charge and heat currents in the tunneling process are calculated via the Keldysh Green's function technique. We show that pronounced thermal rectification and negative differential thermal conductance (NDTC) behaviors can be observed for the multiple-QD junction with asymmetrical tunneling rates and strong interdot Coulomb interactions.

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arXiv2008

Bistable states of quantum dot array junctions for high-density memory

We demonstrate that two-dimensional (2D) arrays of coupled quantum dots (QDs) with six-fold degenerate p orbitals can display bistable states, suitable for application in high-density memory device with low power consumption. Due to the inter-dot coupling of $p_x$ and $p_y$ orbitals in these QD arrays, two dimensional conduction bands can be formed in the x-y plane, while the $p_z$ orbitals remain localized in the x-y plane such that the inter-dot coupling between them can be neglected. We model such systems by taking into account the on-site repulsive interactions between electrons in $p_z$ orbitals and the coupling of the localized $p_z$ orbitals with the 2D conduction bands formed by $p_x$ and $p_y$ orbitals. The Green's function method within an extended Anderson model is used to calculate the tunneling current through the QDs. We find that bistable tunneling current can exist for such systems due to the interplay of the on-site Coulomb interactions (U) between the $p_z$ orbitals and the delocalized nature of conduction band states derived from the hybridization of $p_x$ / $p_y$ orbitals. This bistable current is not sensitive to the detailed band structure of the two dimensional band, but depends critically on the strength of $U$ and the ratio of the left and right tunneling rates. The behavior of the electrical bistability can be sustained when the 2D QD array reduces to a one-dimensional QD array, indicating the feasibility for high-density packing of these bistable nanoscale structures.

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arXiv2007

Tunneling current spectroscopy of a nanostructure junction involving multiple energy levels

A multi-level Anderson model is employed to simulate the system of a nanostructure tunnel junction with any number of one-particle energy levels. The tunneling current, including both shell-tunneling and shell-filling cases, is theoretically investigated via the nonequilibrium Green's function method. We obtain a closed form for the spectral function, which is used to analyze the complicated tunneling current spectra of a quantum dot or molecule embedded in a double-barrier junction. We also show that negative differential conductance can be observed in a quantum dot tunnel junction when the Coulomb interactions with neighboring quantum dots are taken into account.

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arXiv2006

Light emitting single electron transistors

The dynamic properties of light-emitting single-electron transistors (LESETs) made from quantum dots are theoretically studied by using nonequilibrium Green's function method. Holes residing at QD created by small ac signals added in the base electrode of valence band lead to the exciton assisted tunnelling level for the electron tunnelling from emitter to collector, it is therefore such small signals can be amplified. LESETs can be employed as efficient single-photon detectors.

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arXiv2006

Light-emitting current of electrically driven single-photon sources

The time-dependent tunnelling current arising from the electron-hole recombination of exciton state is theoretically studied using the nonequilibrium Green's function technique and the Anderson model with two energy levels. The charge conservation and gauge invariance are satisfied in the tunnelling current. Apart from the classical capacitive charging and discharging behavior, interesting oscillations superimpose on the tunnelling current for the applied rectangular pulse voltage.

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arXiv2005

Transient tunneling current of single electron transistors

The transient tunneling current of single electron transistors (SETs) is theoretically investigated. The time-dependent current formula given by Jauho, Wingreen and Meir [Phys. Rev. B 50, 5528 (1994)] is applied to study the temperature effect on the transient current through a single quantum dot embedded into asymmetry barrier. It is found that the tunneling rate ratio significantly influences the feature of transient current. Finally, the oscillation structures on the exponential growth transient current of single hole transistors composed of germanium quantum dots is analyzed.

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arXiv2005

Fano interference effect on the transition spectrum of single electron transistors

We theoretically study the intraband transition spectrum of single electron transistors (SETs) composed of individual self-assembled quantum dots. The polarization of SETs is obtained by using the nonequilibrium Green's function technique and the Anderson model with three energy levels. Owing to nonradiative coupling between two excited states through the continuum of electrodes, the Fano interference effect significantly influences the peak position and intensity of infrared wavelength single-photon spectrum.

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arXiv2005

Stark effect on the exciton complexes of individual quantum dots

The emission spectrum of exciton complexes formed in individual self-assembled quantum dots (QDs) embedded into a p-n junction is theoretically studied using an effective mass model. We calculate the particle Coulomb interactions, eletron-hole overlaps and transition energies of exciton complexes for the different strength and direction of electric field. Both redshifts and blueshifts are observed in exciton, trions and biexciton. The Stark effect may be applied to manipulate the spontaneous emission rate of individual QDs embedded in microcavities.

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arXiv2005

Tunnelling current and emission spectrum of a single electron transistor under optical pumping

Theoretical studies of the tunnelling current and emission spectrum of a single electron transistor (SET) under optical pumping are presented. The calculation is performed via Keldysh Green's function method within the Anderson model with two energy levels. It is found that holes in the quantum dot (QD) created by optical pumping lead to new channels for the electron tunnelling from emitter to collector. As a consequence, an electron can tunnel through the QD via additional channels, characterized by the exciton, trion and biexciton states. It is found that the tunnelling current as a function of the gate voltage displays a series of sharp peaks and the spacing between these peaks can be used to determine the exciton binding energy as well as the electron-electron Coulomb repulsion energy. In addition, we show that the single-photon emission associated with the electron-hole recombination in the exciton complexes formed in the QD can be controlled both electrically and optically.

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