arXiv subjects

David P. Fenning

Publications and source records attributed to David P. Fenning.

10 recordsLinked to original sources

arXiv2026

BaCd2P2: a promising impurity-tolerant counterpart of GaAs for photovoltaics

BaCd2P2 (BCP) has been recently identified as a new solar absorber with promising optoelectronic properties. This work demonstrates that, despite having a low precursor purity (98.90% to 99.95%), synthesized BCP samples exhibit a promising photoconductive carrier lifetime up to 300 ns, an implied open-circuit voltage exceeding 1 V, and photoluminescence quantum yield in the order of 0.2%, comparable to a high-purity single-crystalline GaAs wafer. To better understand the underlying mechanisms of BCP's promising properties, its tolerance to intrinsic defects and extrinsic impurities is investigated using first-principles defect modeling and compared with that of the well-studied GaAs. The results show that the nonradiative recombination rates induced by dominant deep-level intrinsic antisite defects are lower in BCP than in GaAs under typical growth conditions. Further exploration of the impact of transition metal impurities in the raw materials used to make BCP and impurities introduced during its synthesis shows that most of these do not form deep-level nonradiative recombination centers. As an impurity-tolerant counterpart of GaAs, BCP demonstrates great potential to improve the cost-to-performance ratio of photovoltaics.

cond-mat.mtrl-sci↗

arXiv2026

Long photoexcited carrier lifetime in a stable and earth-abundant zinc polyphosphide

Halide perovskites have revolutionized optoelectronics by demonstrating that long carrier lifetime can be achieved in materials processed in relatively uncontrolled environments, whereas conventional inorganic semiconductors typically suffer from short carrier lifetime unless very carefully prepared and postprocessed. Here, we report the discovery of exceptionally long photoexcited carrier lifetime in monoclinic ZnP2, effectively bridging the carrier lifetime gap between direct-gap inorganic semiconductors and halide perovskites. Through computational screening, ZnP2 is identified as a long carrier lifetime semiconductor characterized by an unconventional polyphosphide bonding, combining covalently bonded phosphorus chains and polar-covalent Zn-P tetrahedra. Experimentally, ZnP2 crystals synthesized from low-purity precursors exhibit bright band-to-band photoluminescence at 1.49 eV and carrier lifetimes of up to 1 $μ$s. Further analysis reveals that the polyphosphide bonding of ZnP2 suppresses the formation of deep intrinsic defects, making it defect resistant. Combined with its remarkable environmental stability, ZnP2 presents a highly promising material for solar absorbers and light emitters. Our work illustrates that underexplored inorganic materials spaces with unusual chemical bonding hold great promise for discovering novel optoelectronic materials.

cond-mat.mtrl-sci↗

arXiv2024

Assessing carrier mobility, dopability, and defect tolerance in the chalcogenide perovskite BaZrS$_3$

The chalcogenide perovskite BaZrS$_3$ has attracted much attention as a promising solar absorber for thin-film photovoltaics. Here, we use first-principles calculations to evaluate its carrier transport and defect properties. We find that BaZrS$_3$ has a phonon-limited electron mobility of 37 cm$^2$/Vs comparable to that in halide perovskites but lower hole mobility of 11 cm$^2$/Vs. The defect computations indicate that BaZrS$_3$ is intrinsically n-type due to shallow sulfur vacancies, but that strong compensation by sulfur vacancies will prevent attempts to make it p-type. We also establish that BaZrS$_3$ shows some degree of defect tolerance, presenting only few low formation energy, deep intrinsic defects. Among the deep defects, sulfur interstitials are the dominant nonradiative recombination centers but exhibit a moderate capture coefficient. Our work highlights the material's intrinsic limitations in carrier mobility and p-type doping and suggests focusing on suppressing the formation of sulfur interstitials to reach longer carrier lifetime.

cond-mat.mtrl-sci↗

arXiv2024

Low-Temperature Synthesis of Stable CaZn$_2$P$_2$ Zintl Phosphide Thin Films as Candidate Top Absorbers

The development of tandem photovoltaics and photoelectrochemical solar cells requires new absorber materials with band gaps in the range of ~1.5-2.3 eV, for use in the top cell paired with a narrower-gap bottom cell. An outstanding challenge is finding materials with suitable optoelectronic and defect properties, good operational stability, and synthesis conditions that preserve underlying device layers. This study demonstrates the Zintl phosphide compound CaZn$_2$P$_2$ as a compelling candidate semiconductor for these applications. We prepare phase pure, 500 nm-thick CaZn$_2$P$_2$ thin films using a scalable reactive sputter deposition process at growth temperatures as low as 100 °C, which is desirable for device integration. UV-vis spectroscopy shows that CaZn$_2$P$_2$ films exhibit an optical absorptivity of ~10$^4$ cm$^-$$^1$ at ~1.95 eV direct band gap. Room-temperature photoluminescence (PL) measurements show near-band-edge optical emission, and time-resolved microwave conductivity (TRMC) measurements indicate a photoexcited carrier lifetime of ~30 ns. CaZn$_2$P$_2$ is highly stable in both ambient conditions and moisture, as evidenced by PL and TRMC measurements. Experimental data are supported by first-principles calculations, which indicate the absence of low-formation-energy, deep intrinsic defects. Overall, our study should motivate future work integrating this potential top cell absorber material into tandem solar cells.

cond-mat.mtrl-sci↗

arXiv2023

Discovery of the Zintl-phosphide BaCd$_{2}$P$_{2}$ as a long carrier lifetime and stable solar absorber

Thin-film photovoltaics offers a path to significantly decarbonize our energy production. Unfortunately, current materials commercialized or under development as thin-film solar cell absorbers are far from optimal as they show either low power conversion efficiency or issues with earth-abundance and stability. Entirely new and disruptive materials platforms are rarely discovered as the search for new solar absorbers is traditionally slow and serendipitous. Here, we use first principles high-throughput screening to accelerate this process. We identify new solar absorbers among known inorganic compounds using considerations on band gap, carrier transport, optical absorption but also on intrinsic defects which can strongly limit the carrier lifetime and ultimately the solar cell efficiency. Screening about 40,000 materials, we discover the Zintl-phosphide BaCd$_{2}$P$_{2}$ as a potential high-efficiency solar absorber. Follow-up experimental work confirms the predicted promises of BaCd$_{2}$P$_{2}$ highlighting an optimal band gap for visible absorption, bright photoluminescence, and long carrier lifetime of up to 30 ns even for unoptimized powder samples. Importantly, BaCd$_{2}$P$_{2}$ does not contain any critical elements and is highly stable in air and water. Our work opens an avenue for a new family of stable, earth-abundant, high-performance Zintl-based solar absorbers. It also demonstrates how recent advances in first principles computation can accelerate the search of photovoltaic materials by combining high-throughput screening with experiment.

cond-mat.mtrl-sci↗

arXiv2021

Electrochemical Screening of Contact Layers for Metal Halide Perovskites

Optimizing selective contact layers in photovoltaics is necessary to yield high performing stable devices. However, this has been difficult for perovskites due to their complex interfacial defects that affect carrier concentrations in the active layer as well as charge transfer and recombination at the interface. Using vacuum thermally-evaporated tin oxide as a case study, we highlight electrochemical tests that are simple yet screen device-relevant contact layer properties, making them useful for process development and quality control. Specifically, we show that cyclic voltammetry and potentiostatic chronoamperometry correlate to key performance parameters in completed devices as well as other material/interfacial properties relevant to devices such as shunt pathways and chemical composition. Having fast, reliable, scalable, and actionable probes of electronic properties is increasingly important as halide perovskite photovoltaics approach their theoretical limits and scale to large-area devices.

cond-mat.mtrl-sci↗

arXiv2021

Opportunities for Machine Learning to Accelerate Halide Perovskite Commercialization and Scale-Up

While halide perovskites attract significant academic attention, examples of at-scale industrial production are still sparse. In this perspective, we review practical challenges hindering the commercialization of halide perovskites, and discuss how machine-learning (ML) tools could help: (1) active-learning algorithms that blend institutional knowledge and human expertise could help stabilize and rapidly update baseline manufacturing processes; (2) ML-powered metrology, including computer imaging, could help narrow the performance gap between large- and small-area devices; and (3) inference methods could help accelerate root-cause analysis by reconciling multiple data streams and simulations, focusing research effort on areas with highest probability for improvement. We conclude that to satisfy many of these challenges, incremental -- not radical -- adaptations of existing ML and statistical methods are needed. We identify resources to help develop in-house data-science talent, and propose how industry-academic partnerships could help adapt "ready-now" ML tools to specific industry needs, further improve process control by revealing underlying mechanisms, and develop "gamechanger" discovery-oriented algorithms to better navigate vast materials combination spaces and the literature.

cond-mat.mtrl-sci↗

arXiv2020

Imaging real-time amorphization of hybrid perovskite solar cells under electrical biasing

Perovskite solar cells have drawn much attention in recent years, owing to its world-record setting photovoltaic performances. Despite its promising use in tandem applications and flexible devices, its practicality is still limited by its structural instability often arising from ion migration and defect formation. While it is generally understood that ion instability is a primary cause for degradation, there is still a lack of direct evidence of structural transformation at the atomistic scale. Such an understanding is crucial to evaluate and pin-point how such instabilities are induced relative to external perturbations such as illumination or electrical bias with time, allowing researchers to devise effective strategies to mitigate them. Here, we designed an in-situ TEM setup to enable real-time observation of amorphization in double cation mixed perovskite materials under electrical biasing at 1 V. It is found that amorphization occurs along the (001) and (002) planes, which represents the observation of in-situ facet-dependent amorphization of a perovskite crystal. To reverse the degradation, the samples were heated at 50 oC and was found to recrystallize, effectively regaining its performance losses. This work is vital toward understanding fundamental ion-migration phenomena and address instability challenges of perovskite optoelectronics.

cond-mat.mtrl-sci↗

arXiv2018

Residual Nanoscale Strain in Cesium Lead Bromide Perovskite Reduces Stability and Alters Local Band Gap

Using nanoprobe X-ray diffraction microscopy, we investigate the relationship between residual strains from crystal growth in CsPbBr$_3$ thin film crystals, their stability, and local bandgap. We find that out-of-plane compressive strain that arises from cooldown from crystallization is detrimental to material stability under X-ray irradiation. We also find that the optical photoluminescence red shifts as a result of the out-of-plane compressive strain. The sensitivity of bandgap to strain suggests possible applications such as stress-sensitive sensors. Mosaicity, the formation of small misorientations in neighboring crystalline domains we observe in some CsPbBr$_3$ single crystals, indicates the significant variations in crystal quality that can occur even in single-crystal halide perovskites. The nano-diffraction results suggest that reducing local strains is a necessary path to enhance the stability of perovskite optoelectronic materials and devices from light-emitting diodes to high-energy detectors.

cond-mat.mtrl-sci↗

arXiv2018

Homogenization of Halide Distribution and Carrier Dynamics in Alloyed Organic-Inorganic Perovskites

Perovskite solar cells have shown remarkable efficiencies beyond 22%, through organic and inorganic cation alloying. However, the role of alkali-metal cations is not well-understood. By using synchrotron-based nano-X-ray fluorescence and complementary measurements, we show that when adding RbI and/or CsI the halide distribution becomes homogenous. This homogenization translates into long-lived charge carrier decays, spatially homogenous carrier dynamics visualized by ultrafast microscopy, as well as improved photovoltaic device performance. We find that Rb and K phase-segregate in highly concentrated aggregates. Synchrotron-based X-ray-beam-induced current and electron-beam-induced current of solar cells show that Rb clusters do not contribute to the current and are recombination active. Our findings bring light to the beneficial effects of alkali metal halides in perovskites, and point at areas of weakness in the elemental composition of these complex perovskites, paving the way to improved performance in this rapidly growing family of materials for solar cell applications.

cond-mat.mtrl-sci↗