arXiv subjects

David P. Pappas

Publications and source records attributed to David P. Pappas.

40 records · Page 3Linked to original sources

arXiv2011

Sub-micrometer epitaxial Josephson junctions for quantum circuits

We present a fabrication scheme and testing results for epitaxial sub-micrometer Josephson junctions. The junctions are made using a high-temperature (1170 K) "via process" yielding junctions as small as 0.8 mu m in diameter by use of optical lithography. Sapphire (Al2O3) tunnel-barriers are grown on an epitaxial Re/Ti multilayer base-electrode. We have fabricated devices with both Re and Al top electrodes. While room-temperature (295 K) resistance versus area data are favorable for both types of top electrodes, the low-temperature (50 mK) data show that junctions with the Al top electrode have a much higher subgap resistance. The microwave loss properties of the junctions have been measured by use of superconducting Josephson junction qubits. The results show that high subgap resistance correlates to improved qubit performance.

cond-mat.supr-con↗

arXiv2010

Remote Sensing and Control of Phase Qubits

We demonstrate a remote sensing design of phase qubits by separating the control and readout circuits from the qubit loop. This design improves measurement reliability because the control readout chip can be fabricated using more robust materials and can be reused to test different qubit chips. Typical qubit measurements such as Rabi oscillations, spectroscopy, and excited-state energy relaxation are presented.

cond-mat.supr-con↗

arXiv2010

Low Loss Superconducting Titanium Nitride Coplanar Waveguide Resonators

Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into RF coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin temperatures in both the many photon and single photon limits, i.e. high and low power regimes, respectively. At high power, internal quality factors ($Q_i$'s) higher than $10^7$ were measured for TiN with predominantly a (200)-TiN orientation. Films that showed significant (111)-TiN texture invariably had much lower $Q_i$'s, on the order of $10^5$. Our studies show that the (200)-TiN is favored for growth at high temperature on either bare Si or SiN buffer layers. However, growth on bare sapphire or Si(100) at low temperature resulted in primarily a (111)-TiN orientation. Ellipsometry and Auger measurements indicate that the (200)-TiN growth on the bare Si substrates is correlated with the formation of a thin, $\approx 2$ nm, layer of SiN during the pre-deposition procedure. In the single photon regime, $Q_i$ of these films exceeded $8\times10^5$, while thicker SiN buffer layers led to reduced $Q_i$'s at low power.

cond-mat.supr-con↗

arXiv2010

Direct Observation of Coherent Population Trapping in a Superconducting Artificial Atom

The phenomenon of Coherent Population Trapping (CPT) of an atom (or solid state "artificial atom"), and the associated effect of Electromagnetically Induced Transparency (EIT), are clear demonstrations of quantum interference due to coherence in multi-level quantum systems. We report observation of CPT in a superconducting phase qubit by simultaneously driving two coherent transitions in a $Λ$-type configuration, utilizing the three lowest lying levels of a local minimum of a phase qubit. We observe $60(\pm 7)%$ suppression of excited state population under conditions of CPT resonance. We present data and matching theoretical simulations showing the development of CPT in time. Finally, we used the observed time dependence of the excited state population to characterize quantum dephasing times of the system.

quant-ph↗