arXiv subjects

David R. McKenzie

Publications and source records attributed to David R. McKenzie.

4 recordsLinked to original sources

arXiv2025

Revealing localised dark-exciton populations in 2D perovskites via magneto-optical microscopy

The successful development of optoelectronic devices is contingent on a detailed understanding of interactions between light and excited energy states in photoactive materials. In 2D perovskites, excitons are the dominant photogenerated species and their energetic structure plays a pivotal role, governing photon absorption and emission processes. In these materials, dark exciton states can undergo photoluminescence due to the relaxation of selection rules and this process can be modulated by an external magnetic field, enabling unambiguous identification of the exciton fine structure. Previous reports of magneto-optical spectroscopy on 2D perovskites have been restricted to the macroscopic response, where key information is lost regarding the microscopic heterogeneity of the photoluminescence. Here, we use magneto-optical microscopy for the first time on perovskite materials to elucidate the spatial variation of exciton emission processes. In 2D perovskite thin films, we distinguish between regions of localised bright and dark exciton populations, correlated to the film morphology. In single crystals, we show that dark excitons become localised at the edges, where excitons can be trapped in two distinct types of sub-gap states. This work represents significant progress in understanding the properties of exciton emission in 2D perovskites, which is crucial for the development of optoelectronic technology.

cond-mat.mtrl-sci↗

arXiv2022

The gray body approximation for radiative heat transfer in evacuated tube solar collectors: Effects of envelope infrared transparency

A theoretical and experimental analysis is carried out of radiative heat transfer in the coaxial geometry of evacuated tube solar collectors. The gray body approximation implicit in the use of an effective emissivity does not strictly apply to evacuated tube solar collectors due to selective absorber coating and partially transmitting outer glass in the thermal infrared, especially when constructed from borosilicate. We develop analytic expressions for the heat transfer through the outer envelope and show the equations no longer follow a simple form where an effective emissivity for the system can be defined. To test all approximations in practice, an experiment is performed using an evacuated solar collector manufactured in the 1980s by the Nitto Kohki company in Japan using the effective emissivity approximation to determine the typical heat transfer characteristics using net radiative heat flows in both directions. This method enabled a good fit to temperature-time data for cooling and heating of the inner tube for temperatures between 10 and 85°C. The results confirm that the effective emittance method can be used in situations with typical glass wall thickness and temperatures. At temperatures greater 100°C, the spectral distribution of the emitted radiation falls significantly within the transmitting region of the outer glass and can no longer be neglected. The work has verified the stability of the vacuum in this type of collector as the tube still functions well, maintaining a low emissivity and good vacuum after approximately 40 years in storage conditions.

physics.app-ph↗

arXiv2019

Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy

Over the last two decades, prototype devices for future classical and quantum computing technologies have been fabricated, by using scanning tunneling microscopy and hydrogen resist lithography to position phosphorus atoms in silicon with atomic-scale precision. Despite these successes, phosphine remains the only donor precursor molecule to have been demonstrated as compatible with the hydrogen resist lithography technique. The potential benefits of atomic-scale placement of alternative dopant species have, until now, remained unexplored. In this work, we demonstrate successful fabrication of atomic-scale structures of arsenic-in-silicon. Using a scanning tunneling microscope tip, we pattern a monolayer hydrogen mask to selectively place arsenic atoms on the Si(001) surface using arsine as the precursor molecule. We fully elucidate the surface chemistry and reaction pathways of arsine on Si(001), revealing significant differences to phosphine. We explain how these differences result in enhanced surface immobilization and in-plane confinement of arsenic compared to phosphorus, and a dose-rate independent arsenic saturation density of $0.24{\pm}0.04$ ML. We demonstrate the successful encapsulation of arsenic delta-layers using silicon molecular beam epitaxy, and find electrical characteristics that are competitive with equivalent structures fabricated with phosphorus. Arsenic delta-layers are also found to offer improvement in out-of-plane confinement compared to similarly prepared phosphorus layers, while still retaining >80% carrier activation and sheet resistances of $<2 kΩ/{\square}$. These excellent characteristics of arsenic represent opportunities to enhance existing capabilities of atomic-scale fabrication of dopant structures in silicon, and are particularly important for three-dimensional devices, where vertical control of the position of device components is critical.

physics.app-ph↗

arXiv2011

Mechanisms for covalent immobilization of horseradish peroxi-dase on ion beam treated polyethylene

The mechanism that provides the observed strong binding of biomolecules to polymer sur-faces modified by ion beams is investigated. The surface of polyethylene (PE) was modified by plasma immersion ion implantation with nitrogen ions. Structure changes including car-bonization and oxidation were observed in the modified surface layer of PE by Raman spec-troscopy, FTIR ATR spectroscopy, atomic force microscopy, surface energy measurement and XPS spectroscopy. An observed high surface energy of the modified polyethylene was attributed to the presence of free radicals on the surface. The surface energy decay with stor-age time after PIII treatment was explained by a decay of the free radical concentration while the concentration of oxygen-containing groups increased with storage time. Horseradish per-oxidase was covalently attached onto the modified PE surface. The enzymatic activity of co-valently attached protein remained high. A mechanism based on the covalent attachment by the reaction of protein with free radicals in the modified surface is proposed. Appropriate blocking agents can block this reaction. All aminoacid residues can take part in the covalent attachment process, providing a universal mechanism of attachment for all proteins. The long-term activity of the modified layer to attach protein (at least 2 years) is explained by stabilisa-tion of unpaired electrons in sp2 carbon structures. The native conformation of attached pro-tein is retained due to hydrophilic interactions in the interface region. A high concentration of free radicals on the surface can give multiple covalent bonds to the protein molecule and de-stroy the native conformation and with it the catalytic activity. The universal mechanism of protein attachment to free radicals could be extended to various methods of radiation damage of polymers.

physics.chem-ph↗