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David Sebastian

Publications and source records attributed to David Sebastian.

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Industry-ready spin-photon interfaces for hybrid photonic quantum computing

Hybrid photonic quantum computers, combining stationary matter qubits and flying photonic qubits, offer an intrinsically networked and resource-efficient route to large-scale, error-corrected quantum computation. Their core components are cavity-coupled matter qubits that act as light--matter interfaces, enabling: high-efficiency on-demand single-photon generation, stable near-unity photon indistinguishability and spin--multi-photon entanglement. Semiconductor quantum dots in microcavities are a leading platform for realizing such devices. Yet reaching the performance, reproducibility and spin-coherence thresholds for large-scale error correction remains a major challenge requiring industrial fabrication and control. Here we report thousands of monolithic semiconductor quantum-dot devices fabricated using a III--V pilot production-line process compatible with large-scale deployment. Systematic control of source parameters yields state-of-the-art efficiency and supports a path to optical losses below fault-tolerance thresholds. Using field-quadrature state reconstruction as a stringent joint test of efficiency and indistinguishability, we observe near-unity photon quantum purity stable over tens of minutes and a record single-photon Wigner-function negativity. We further demonstrate seven-partite spin--multi-photon entanglement and spin coherence extendable to microsecond timescales in the low-magnetic-field regime. Finally, photons from distant sources are as indistinguishable as photons emitted successively by a single source. These results establish foundry-compatible III--V quantum dots as a scalable platform for hybrid photonic quantum computing.

quant-ph

In-situ reduction by Joule heating and measurement of electrical conductivity of graphene oxide in a transmission electron microscope

Graphene oxide (GO) is reduced by Joule heating using in-situ transmission electron microscopy (TEM). The approach allows the simultaneous study of GO conductivity by electrical measurements and of its composition and structural properties throughout the reduction process by TEM, electron diffraction and electron energy-loss spectroscopy. The small changes of GO properties observed at low applied electric currents are attributed to the promotion of diffusion processes. The actual reduction process starts from an applied power density of about 2 1014 Wm-3 and occurs in a highly uniform and localized manner. The conductivity increases more than 4 orders of magnitude reaching a value of 3 103 Sm-1 with a final O content of less than 1%. We discuss differences between the reduction by thermal annealing and Joule heating.

cond-mat.mes-hall