arXiv subjects

David Soriano

Publications and source records attributed to David Soriano.

16 recordsLinked to original sources

arXiv2026

Enhancement of topological magnon-driven spin currents through local edge strain in CrI$_3$ nanoribbons

This work describes topological magnon transport in zigzag CrI$_3$ nanoribbons (ZNR) in presence of edge strain. Exchange coupling terms under strain are obtained from first-principles calculations, and the topological properties are introduced \emph{via} second-neighbor Dzyaloshinskii-Moriya interactions. The magnon Hamiltonian is calculated using linear spin-wave theory and the Holstein-Primakoff transformation. Then, we use non-equilibrium Green's function method to calculate the spin-wave-generated currents in ribbons with different edge strain. Our calculations show the formation of strongly localized edge topological magnons within the gap for DMI values slightly higher than the ones reported experimentally and in the presence of a tensile edge strain of the order of 3\%. The magnon-mediated topological spin transport calculations shows an increase of the spin current and characteristic decay length in tensile-strained CrI$_3$ nanoribbons compared with unstrained ones. Our findings demonstrate that straintronics provides a powerful route to harness and control topological magnons in two-dimensional magnetic materials.

cond-mat.mes-hall↗

arXiv2024

Roadmap on Quantum Magnetic Materials

Fundamental research on two-dimensional (2D) magnetic systems based on van der Waals materials has been gaining traction rapidly since their recent discovery. With the increase of recent knowledge, it has become clear that such materials have also a strong potential for applications in devices that combine magnetism with electronics, optics, and nanomechanics. Nonetheless, many challenges still lay ahead. Several fundamental aspects of 2D magnetic materials are still unknown or poorly understood, such as their often-complicated electronic structure, optical properties, and magnetization dynamics, and their magnon spectrum. To elucidate their properties and facilitate integration in devices, advanced characterization techniques and theoretical frameworks need to be developed or adapted. Moreover, developing synthesis methods which increase critical temperatures and achieve large-scale, high-quality homogeneous thin films is crucial before these materials can be used for real-world applications. Therefore, the field of 2D magnetic materials provides many challenges and opportunities for the discovery and exploration of new phenomena, as well as the development of new applications. This Roadmap presents the background, challenges, and potential research directions for various relevant topics in the field on the fundamentals, synthesis, characterization, and applications. We hope that this work can provide a strong starting point for young researchers in the field and provide a general overview of the key challenges for more experienced researchers.

cond-mat.mtrl-sci↗

arXiv2024

Strain-induced valley transport in CrBr$_3$/WSe$_2$/CrBr$_3$ van der Waals heterostructure

Two dimensional magnetic materials are at the forefront of the next generation of spintronic devices. The possibility to interface them with other van der Waals materials such as transition metal dichalcogenides has opened new possibilities for the observation of new and exiting physical phenomena. Here, we present a proof-of-concept valleytronic device based on CrBr$_3$-encapsulated WSe$_2$ showing an unprecedented valley splitting of $\sim 100$ meV under compressive strain of the WSe$_2$, able to be tuned by the relative magnetization of the encapsulating layers. Multiscale transport simulations performed on this device show a spin-valley current with a polarization higher than 80$\%$ than is maintained in a range of $\sim$ 0.3 V gate voltage in a field-effect transistor configuration. The impact of the stacking configuration on the valley splitting is also evaluated.

cond-mat.mes-hall↗

arXiv2023

Monolayer-to-mesoscale modulation of the optical properties in 2D CrI3 mapped by hyperspectral microscopy

Magnetic 2D materials hold promise to change the miniaturization paradigm of unidirectional photonic components. However, the integration of these materials in devices hinges on the accurate determination of the optical properties down to the monolayer limit, which is still missing. By using hyperspectral wide-field imaging we reveal a non-monotonic thickness dependence of the complex optical dielectric function in the archetypal magnetic 2D material CrI3 extending across different length scales: onsetting at the mesoscale, peaking at the nanoscale and decreasing again down to the single layer. These results portray a modification of the electronic properties of the material and align with the layer-dependent magnetism in CrI3, shedding light into the long-standing structural conundrum in this material. The unique modulation of the complex dielectric function from the monolayer up to more than 100 layers will be instrumental for understanding and manipulating the magneto-optical effects of magnetic 2D materials.

cond-mat.mes-hall↗

arXiv2020

Thermal ripples in bilayer graphene

We study thermal fluctuations of a free-standing bilayer graphene subject to vanishing external tension. Within a phenomenological theory, the system is described as a stack of two continuum crystalline membranes, characterized by finite elastic moduli and a nonzero bending rigidity. A nonlinear rotationally-invariant model guided by elasticity theory is developed to describe interlayer interactions. After neglection of in-plane phonon nonlinearities and anharmonic interactions involving interlayer shear and compression modes, an effective theory for soft flexural fluctuations of the bilayer is constructed. The resulting model, neglecting anisotropic interactions, has the same form of a well-known effective theory for out-of-plane fluctuations in a single-layer membrane, but with a strongly wave-vector dependent bare bending rigidity. Focusing on AB-stacked bilayer graphene, parameters governing interlayer interactions in the theory are derived by first-principles calculations. Statistical-mechanical properties of interacting flexural fluctuations are then calculated by a numerical iterative solution of field-theory integral equations within the self-consistent screening approximation (SCSA). The bare bending rigidity in the considered model exhibits a crossover between a long-wavelength regime governed by in-plane elastic stress and a short wavelength region controlled by monolayer curvature stiffness. Interactions between flexural fluctuations drive a further crossover between a harmonic and a strong-coupling regime, characterized by anomalous scale invariance. The overlap and interplay between these two crossover behaviors is analyzed at varying temperatures.

cond-mat.mes-hall↗

arXiv2018

Spin Proximity Effects in Graphene/Topological Insulator Heterostructures

Enhancing the spin-orbit interaction in graphene, via proximity effects with topological insulators, could create a novel 2D system that combines nontrivial spin textures with high electron mobility. In order to engineer practical spintronics applications with such graphene/topological insulator (Gr/TI) heterostructures, an understanding of the hybrid spin-dependent properties is essential. {However to date, despite the large number of experimental studies on Gr/TI heterostructures reporting a great variety of remarkable (spin) transport phenomena, little is known about the true nature of the spin texture of the interface states as well as their role on the measured properties. Here we use {\it ab initio} simulations and tight-binding models to determine the precise spin texture of electronic states in graphene interfaced with a Bi$_2$Se$_3$ topological insulator. Our calculations predict the emergence of a giant spin lifetime anisotropy in the graphene layer, which should be a measurable hallmark of spin transport in Gr/TI heterostructures, and suggest novel types of spin devices

cond-mat.mes-hall↗

arXiv2018

Pseudospin-driven spin relaxation mechanism in graphene

The possibility of transporting spin information over long distances in graphene, owing to its small intrinsic spin-orbit coupling (SOC) and the absence of hyperfine interaction, has led to intense research into spintronic applications. However, measured spin relaxation times are orders of magnitude smaller than initially predicted, while the main physical process for spin dephasing and its charge-density and disorder dependences remain unconvincingly described by conventional mechanisms. Here, we unravel a spin relaxation mechanism for nonmagnetic samples that follows from an entanglement between spin and pseudospin driven by random SOC, which makes it unique to graphene. The mixing between spin and pseudospin-related Berry's phases results in fast spin dephasing even when approaching the ballistic limit, with increasing relaxation times away from the Dirac point, as observed experimentally. The SOC can be caused by adatoms, ripples or even the substrate, suggesting novel spin manipulation strategies based on the pseudospin degree of freedom.

cond-mat.mes-hall↗

arXiv2018

Grain boundary-induced variability of charge transport in hydrogenated polycrystalline graphene

Chemical functionalization has proven to be a promising means of tailoring the unique properties of graphene. For example, hydrogenation can yield a variety of interesting effects, including a metal-insulator transition or the formation of localized magnetic moments. Meanwhile, graphene grown by chemical vapor deposition is the most suitable for large-scale production, but the resulting material tends to be polycrystalline. Up to now there has been relatively little focus on how chemical functionalization, and hydrogenation in particular, impacts the properties of polycrystalline graphene. In this work, we use numerical simulations to study the electrical properties of hydrogenated polycrystalline graphene. We find a strong correlation between the spatial distribution of the hydrogen adsorbates and the charge transport properties. Charge transport is weakly sensitive to hydrogenation when adsorbates are confined to the grain boundaries, while a uniform distribution of hydrogen degrades the electronic mobility. This difference stems from the formation of the hydrogen-induced resonant impurity states, which are inhibited when the honeycomb symmetry is locally broken by the grain boundaries. These findings suggest a tunability of electrical transport of polycrystalline graphene through selective hydrogen functionalization, and also have implications for hydrogen-induced magnetization and spin lifetime of this material.

cond-mat.mes-hall↗

arXiv2018

Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling

Magnetic insulators are a key resource for next-generation spintronic and topological devices. The family of layered metal halides promises ultrathin insulating multiferroics, spin liquids, and ferromagnets, but new characterization methods are required to unlock their potential. Here, we report tunneling through the layered magnetic insulator CrI3 as a function of temperature and applied magnetic field. We electrically detect the magnetic ground state and inter-layer coupling and observe a field-induced metamagnetic transition. The metamagnetic transition results in magnetoresistances of 95%, 300%, and 550% for bilayer, trilayer, and tetralayer CrI3 barriers, respectively. We further measure inelastic tunneling spectra for our junctions, unveiling a rich spectrum of collective magnetic excitations (magnons) in CrI3. Our results establish vertical tunneling as a versatile probe of magnetism in atomically thin insulators.

cond-mat.mes-hall↗

arXiv2016

Localized electronic states at grain boundaries on the surface of graphene and graphite

Recent advances in large-scale synthesis of graphene and other 2D materials have underscored the importance of local defects such as dislocations and grain boundaries (GBs), and especially their tendency to alter the electronic properties of the material. Understanding how the polycrystalline morphology affects the electronic properties is crucial for the development of applications such as flexible electronics, energy harvesting devices or sensors. We here report on atomic scale characterization of several GBs and on the structural-dependence of the localized electronic states in their vicinity. Using low temperature scanning tunneling microscopy (STM) and spectroscopy (STS), together with tight binding and ab initio numerical simulations we explore GBs on the surface of graphite and elucidate the interconnection between the local density of states (LDOS) and their atomic structure. We show that the electronic fingerprints of these GBs consist of pronounced resonances which, depending on the relative orientation of the adjacent crystallites, appear either on the electron side of the spectrum or as an electron-hole symmetric doublet close to the charge neutrality point. These two types of spectral features will impact very differently the transport properties allowing, in the asymmetric case to introduce transport anisotropy which could be utilized to design novel growth and fabrication strategies to control device performance.

cond-mat.mes-hall↗

arXiv2015

Spin Dynamics and Relaxation in Graphene Dictated by Electron-hole Puddles

The understanding of spin dynamics and relaxation mechanisms in clean graphene and the upper time and length scales on which spin devices can operate are prerequisites to realizing graphene spintronic technologies. Here we theoretically reveal the nature of fundamental spin relaxation mechanisms in clean graphene on different substrates with spin-orbit Rashba fields as low as a few tens of micron eV. Spin lifetimes ranging from 50 picoseconds up to several nanoseconds are found to be dictated by substrate-induced electron-hole characteristics. A crossover in the spin relaxation mechanism from a Dyakonov-Perel type for SiO2 substrates to a broadening-induced dephasing for hBN substrates is described. The energy dependence of spin lifetimes, their ratio for spins pointing out-of-plane and in-plane, and the scaling with disorder provide a global picture about spin dynamics and relaxation in ultraclean graphene in presence of electron-hole puddles.

cond-mat.mes-hall↗

arXiv2015

Spin Transport in Hydrogenated Graphene

In this review we discuss the multifaceted problem of spin transport in hydrogenated graphene from a theoretical perspective. The current experimental findings suggest that hydrogenation can either increase or decrease spin lifetimes, which calls for clarification. We first discuss the spin-orbit coupling induced by local $σ-π$ re-hybridization and ${\bf sp}^{3}$ C-H defect formation together with the formation of a local magnetic moment. First-principles calculations of hydrogenated graphene unravel the strong interplay of spin-orbit and exchange couplings. The concept of magnetic scattering resonances, recently introduced \cite{Kochan2014} is revisited by describing the local magnetism through the self-consistent Hubbard model in the mean field approximation in the dilute limit, while spin relaxation lengths and transport times are computed using an efficient real space order N wavepacket propagation method. Typical spin lifetimes on the order of 1 nanosecond are obtained for 1 ppm of hydrogen impurities (corresponding to transport time about 50 ps), and the scaling of spin lifetimes with impurity density is described by the Elliott-Yafet mechanism. This reinforces the statement that magnetism is the origin of the substantial spin polarization loss in the ultraclean graphene limit.

cond-mat.mes-hall↗

arXiv2014

Multiple Quantum Phases in Graphene with Enhanced Spin-Orbit Coupling: From the Quantum Spin Hall Regime to the Spin Hall Effect and a Robust Metallic State

We report an intriguing transition from the quantum spin Hall phase to the spin Hall effect upon segregation of thallium adatoms adsorbed onto a graphene surface. Landauer-Büttiker and Kubo-Greenwood simulations are used to access both edge and bulk transport physics in disordered thallium-functionalized graphene systems of realistic sizes. Our findings not only quantify the detrimental effects of adatom clustering in the formation of the topological state, but also provide evidence for the emergence of spin accumulation at opposite sample edges driven by spin-dependent scattering induced by thallium islands, which eventually results in a minimum bulk conductivity $\sim 4e^{2}/h$, insensitive to localization effects.

cond-mat.mes-hall↗

arXiv2014

Anomalous exchange interaction between intrinsic spins in conducting graphene systems

We address the nature and possible observable consequences of singular one-electron states that appear when strong defects are introduced in the metallic family of graphene, namely, metallic carbon nanotubes and nanotori. In its simplest form, after creating two defects on the same sublattice, a state may emerge at the Fermi energy presenting very unusual properties: It is unique, normalizable, and features a wave function equally distributed around both defects. As a result, the exchange coupling between the magnetic moments generated by the two defects is anomalous. The intrinsic spins couple ferromagnetically, as expected, but do not present an antiferromagnetic excited state at any distance. We propose the use of metallic carbon nanotubes as a novel electronic device based on this anomalous coupling between spins which can be useful for the robust transmission of magnetic information at large distances.

cond-mat.mes-hall↗

arXiv2012

Three-dimensional Models of Topological Insulator Films: Dirac Cone Engineering and Spin Texture Robustness

We have designed three-dimensional models of topological insulator thin films, showing a tunability of the odd number of Dirac cones on opposite surfaces driven by the atomic-scale geometry at the boundaries. This enables creation of a single Dirac cone at the $Γ$-point as well as possible suppression of quantum tunneling between Dirac states at opposite surfaces (and gap formation), when opposite surfaces are geometrically differentiated. The spin texture of surface states was found to change from a spin-momentum-locking symmetry to a progressive loss in surface spin polarization upon the introduction of bulk disorder, related to the penetration of boundary states inside the bulk. These findings illustrate the richness of the Dirac physics emerging in thin films of topological insulators and may prove utile for engineering Dirac cones and for quantifying bulk disorder in materials with ultraclean surfaces.

cond-mat.mes-hall↗

arXiv2011

Magnetoresistance and Magnetic Ordering Fingerprints in Hydrogenated Graphene

Spin-dependent features in the conductivity of graphene, chemically modified by a random distribution of hydrogen adatoms, are explored theoretically. The spin effects are taken into account using a mean-field self-consistent Hubbard model derived from first-principles calculations. A Kubo-Greenwood transport methodology is used to compute the spin-dependent transport fingerprints of weakly hydrogenated graphene-based systems with realistic sizes. Conductivity responses are obtained for paramagnetic, antiferromagnetic, or ferromagnetic macroscopic states, constructed from the mean-field solutions obtained for small graphene supercells. Magnetoresistance signals up to $\sim 7%$ are calculated for hydrogen densities around 0.25%. These theoretical results could serve as guidance for experimental observation of induced magnetism in graphene.

cond-mat.mes-hall↗