arXiv subjects

David Vanderbilt

Publications and source records attributed to David Vanderbilt.

At least 55 records · Page 3Linked to original sources

arXiv2020

First principles theory of Dirac semimetal Cd$_3$As$_2$ under Zeeman magnetic field

Time-reversal broken Weyl semimetals have attracted much attention recently, but certain aspects of their behavior, including the evolution of their Fermi surface topology and anomalous Hall conductivity with Fermi-level position, have remained underexplored. A promising route to obtain such materials may be to start with a nonmagnetic Dirac semimetal and break time-reversal symmetry via magnetic doping or magnetic proximity. Here we explore this scenario in the case of the Dirac semimetal Cd$_{3}$As$_{2}$, based on first-principles density-functional calculations and subsequent low-energy modeling of Cd$_{3}$As$_{2}$ in the presence of a Zeeman field applied along the symmetry axis. We clarify how each four$-$fold degenerate Dirac node splits into four Weyl nodes, two with chirality $\pm 1$ and two higher-order nodes with chirality $\pm 2$. Using a minimal \kdotp model Hamiltonian whose parameters are fit to the first-principles calculations, we detail the evolution of the Fermi surfaces and their Chern numbers as the Fermi energy is scanned across the region of the Weyl nodes at fixed Zeeman field. We also compute the intrinsic anomalous Hall conductivity as a function of Fermi-level position, finding a characteristic inverted-dome structure. Cd$_{3}$As$_{2}$ is especially well suited to such a study because of its high mobility, but the qualitative behavior revealed here should be applicable to other Dirac semimetals as well.

cond-mat.mtrl-sci↗

arXiv2020

Molecular Mott state in the deficient spinel GaV$_4$S$_8$

In this study, we investigated theoretically the Mott-insulating phase of a deficient spinel chalcogenide GaV$_4$S$_8$, which is known to form a tetrahedral V$_4$S$_4$ cluster unit that results in molecular orbitals (MOs) with a narrow bandwidth in the noninteracting limit. We used a cluster extension of charge self-consistent embedded dynamical mean-field theory to study the impact of strong intra-cluster correlations on the spectral properties as well as the structural degrees of freedom of the system. We found that the strong tetrahedral clustering renders the atomic Mott picture ineffective, and that the resulting MO picture is essential to describe the Mott phase. It was also found that, while the spectral properties can be qualitatively described by the truncation of the Hilbert space down to the lowest-energy MO, a proper description of the structural degrees of freedom requires the inclusion of multi-MO correlations that span a larger energy window. Specifically, we found that the lowest-energy MO description overemphasizes the clustering tendency, while the inclusion of the Hund's coupling between the lower- and higher-energy MOs corrects this tendency, bringing the theoretically predicted crystal structure into good agreement with the experiment.

cond-mat.str-el↗

arXiv2020

Controlling a quantum point junction on the surface of an antiferromagnetic topological insulator

The abstract notion of topology has led to profound insights into real materials. Notably, the surface and edges of topological materials can host physics, such as unidirectional charge or spin transport, that is unavailable in isolated one- and two-dimensional systems. However, to fully control the mixing and interference of edge-state wave functions, one needs robust and tunable junctions. We propose to achieve this control using an antiferromagnetic topological insulator that supports two distinct types of gapless unidirectional channels on its surface, one from antiferromagnetic domain walls and the other from single-height steps. The distinct geometric nature of these edge modes allows them to intersect robustly to form quantum point junctions, and their presence at the surface makes them subject to control by magnetic and electrostatic tips like those used in scanning probe microscopes. Prospects for realizing such junctions are encouraged by recent material candidate proposals, potentially leading to exciting applications in quantum computing and sensing.

cond-mat.mes-hall↗

arXiv2020

Engineering Weyl phases and nonlinear Hall effects in T$_d$-MoTe$_2$

MoTe$_2$ has recently attracted much attention due to the observation of pressure-induced superconductivity, exotic topological phase transitions, and nonlinear quantum effects. However, there has been debate on the intriguing structural phase transitions among various observed phases of MoTe$_2$, and their connection to the underlying topological electronic properties. In this work, by means of density-functional theory (DFT+U) calculations, we investigate the structural phase transition between the polar T$_d$ and nonpolar 1T$'$ phases of MoTe$_2$ in reference to a hypothetical high-symmetry T$_0$ phase that exhibits higher-order topological features. In the T$_d$ phase we obtain a total of 12 Weyl points, which can be created/annihilated, dynamically manipulated, and switched by tuning a polar phonon mode. We also report the existence of a tunable nonlinear Hall effect in T$_d$-MoTe$_2$, and propose the use of this effect as a probe for the detection of polarity orientation in polar (semi)metals. By studying the role of dimensionality, we identify a configuration in which a nonlinear surface response current emerges. The potential technological applications of the tunable Weyl phase and the nonlinear Hall effect are discussed.

cond-mat.mtrl-sci↗

arXiv2020

Berry Flux Diagonalization: Application to Electric Polarization

The switching polarization of a ferroelectric is a characterization of the current that flows due to changes in polarization when the system is switched between two states. Computation of this change in polarization in crystal systems has been enabled by the modern theory of polarization, where it is expressed in terms of a change in Berry phase as the material switches. It is straightforward to compute this change of phase, but only modulo $2π$, requiring a branch choice from among a lattice of values separated by $2π$. The measured switching polarization depends on the actual path along which the material switches, which in general involves nucleation and growth of domains and is therefore quite complex. In this work, we present a physically motivated approach for predicting the experimentally measured switching polarization that involves separating the change in phase between two states into as many gauge-invariant smaller phase changes as possible. As long as the magnitudes of these smaller phase changes remain smaller than $π$, their sum forms a phase change which corresponds to the change one would find along any path involving minimal evolution of the atomic and electronic structure. We show that for typical ferroelectrics, including those that would have otherwise required a densely sampled path, this technique allows the switching polarization to be computed without any need for intermediate sampling between oppositely polarized states.

cond-mat.mtrl-sci↗

arXiv2020

Magnetic phase transitions and spin density distribution in the molecular multiferroic GaV$_4$S$_8$ system

We have carried out neutron diffraction and small angle neutron scattering measurements on a high quality single crystal of the cubic lacunar spinel multiferroic, GaV$_4$S$_8$, as a function of magnetic field and temperature to determine the magnetic properties for the single electron that is located on the tetrahedrally coordinated V$_4$ molecular unit. Our results are in good agreement with the structural transition at 44 K from cubic to rhombohedral symmetry where the system becomes a robust ferroelectric, while long range magnetic order develops below 13 K in the form of an incommensurate cycloidal magnetic structure, which can transform into a Néel-type skyrmion phase in a modest applied magnetic field. Below 5.9(3) K, the crystal enters a ferromagnetic phase, and we find the magnetic order parameter indicates a long range ordered ground state with an ordered moment of 0.23(1) $μ_\mathrm{B}$ per V ion. Both polarized and unpolarized neutron data in the ferroelectric-paramagnetic phase have been measured to determine the magnetic form factor. The data are consistent with a model of the single spin being uniformly distributed across the V$_4$ molecular unit, rather than residing on the single apical V ion, in substantial agreement with the results of first-principles theory. In the magnetically ordered state, polarized neutron measurements are important since both the cycloidal and ferromagnetic order parameters are clearly coupled to the ferroelectricity, causing the structural peaks to be temperature and field dependent. For the ferromagnetic ground state, the spins are locked along the $[1,1,1]$ direction by a surprisingly large anisotropy.

cond-mat.str-el↗

arXiv2020

Gapless hinge states from adiabatic pumping of axion coupling

We demonstrate that chiral hinge modes naturally emerge in insulating crystals undergoing a slow cyclic evolution that changes the Chern-Simons axion angle $θ$ by $2π$. This happens when the surface (not just the bulk) returns to its initial state at the end of the cycle, in which case it must pass through a metallic state to dispose of the excess quantum of surface anomalous Hall conductivity pumped from the bulk. If two adjacent surfaces become metallic at different points along the cycle, there is an interval in which they are in topologically distinct insulating states, with chiral modes propagating along the connecting hinge. We illustrate these ideas for a tight-binding model consisting of coupled layers of the Haldane model with alternating parameters. The surface topology is determined in a slab geometry using two different markers, surface anomalous Hall conductivity and surface-localized charge pumping (flow of surface-localized Wannier bands), and we find that both correctly predict the appearance of gapless hinge modes in a rod geometry. When viewing the axion pump as a four-dimensional (4D) crystal with one synthetic dimension, the hinge modes trace Fermi arcs in the Brillouin zone of the 2D hinge connecting a pair of 3D surfaces of the 4D crystal.

cond-mat.mtrl-sci↗

arXiv2020

Robust A-type order and spin-flop transition on the surface of the antiferromagnetic topological insulator MnBi$_2$Te$_4$

Here we present microscopic evidence of the persistence of uniaxial A-type antiferromagnetic order to the surface layers of MnBi$_2$Te$_4$ single crystals using magnetic force microscopy. Our results reveal termination-dependent magnetic contrast across both surface step edges and domain walls, which can be screened by thin layers of soft magnetism. The robust surface A-type order is further corroborated by the observation of termination-dependent surface spin-flop transitions, which have been theoretically proposed decades ago. Our results not only provide key ingredients for understanding the electronic properties of the antiferromagnetic topological insulator MnBi$_2$Te$_4$, but also open a new paradigm for exploring intrinsic surface metamagnetic transitions in natural antiferromagnets.

cond-mat.mtrl-sci↗

arXiv2020

Axion coupling in the hybrid Wannier representation

Many magnetic point-group symmetries induce a topological classification on crystalline insulators, dividing them into those that have a nonzero quantized Chern-Simons magnetoelectric coupling ("axion-odd" or "topological"), and those that do not ("axion-even" or "trivial"). For time-reversal or inversion symmetries, the resulting topological state is usually denoted as a "strong topological insulator" or an "axion insulator" respectively, but many other symmetries can also protect this "axion $Z_2$" index. Topological states are often insightfully characterized by choosing one crystallographic direction of interest, and inspecting the hybrid Wannier (or equivalently, the non-Abelian Wilson-loop) band structure, considered as a function of the two-dimensional Brillouin zone in the orthogonal directions. Here, we systematically classify the axion-quantizing symmetries, and explore the implications of such symmetries on the Wannier band structure. Conversely, we clarify the conditions under which the axion$Z_2$ index can be deduced from the Wannier band structure. In particular, we identify cases in which a counting of Dirac touchings between Wannier bands, or a calculation of the Chern number of certain Wannier bands, or both, allows for a direct determination of the axion $Z_2$ index. We also discuss when such symmetries impose a "flow" on the Wannier bands, such that they are always glued to higher and lower bands by degeneracies somewhere in the projected Brillouin zone, and the related question of when the corresponding surfaces can remain gapped, thus exhibiting a half-quantized surface anomalous Hall conductivity. Our formal arguments are confirmed and illustrated in the context of tight-binding models for several paradigmatic axion-odd symmetries including time reversal, inversion, simple mirror, and glide mirror symmetries.

cond-mat.mes-hall↗

arXiv2019

Mott metal-insulator transitions in pressurized layered trichalcogenides

Transition metal phosphorous trichalcogenides, $M{\rm P}X_3$ ($M$ and $X$ being transition metal and chalcogen elements respectively), have been the focus of substantial interest recently because of their possible magnetism in the two-dimensional limit. Here we investigate material properties of the compounds with $M$ = Mn and Ni employing $\textit{ab-initio}$ density functional and dynamical mean-field calculations, especially their electronic behavior under external pressure in the paramagnetic phase. Mott metal-insulator transitions (MIT) are found to be a common feature for both compounds, but their lattice structures show drastically different behaviors depending on the relevant orbital degrees of freedom, i.e. $t_{\rm 2g}$ or $e_{g}$. MnPS$_3$ undergoes an isosymmetric structural transition by forming Mn-Mn dimers due to the strong direct overlap between the neighboring $t_{\rm 2g}$ orbitals, accompanied by a significant volume collapse and a spin-state transition. In contrast, NiPS$_3$ and NiPSe$_3$, with their active $e_g$ orbital degrees of freedom, do not show a structural change at the MIT pressure or deep in the metallic phase. Hence NiPS$_3$ and NiPSe$_3$ become rare examples of materials hosting electronic bandwidth-controlled Mott MITs, thus showing promise for ultrafast resistivity switching behavior.

cond-mat.str-el↗

arXiv2019

Influence of magnetic ordering on the spectral properties of binary transition metal oxides

Using the ab initio embedded DMFT (eDMFT) approach, we study the effect of long-range magnetic ordering on the spectral properties in the binary transition metal oxides, and find that the most significant changes appear in the momentum resolved spectral functions, which sharpen into quite well-defined bands in the antiferromagnetic (AFM) phase. The strongest change across the transition is found at the topmost valence band edge (VBE), which is commonly associated with the Zhang-Rice bound state. This VBE state strengthens in the AFM phase, but only for the minority spin component, which is subject to stronger fluctuations. A similar hybridized VBE state also appears in the DFT single-particle description of the AFM phase, but gets much stronger and acquires a well-defined energy in the eDMFT description.

cond-mat.str-el↗

arXiv2019

Polar and phase domain walls with conducting interfacial states in a Weyl semimetal MoTe2

Much of the dramatic growth in research on topological materials has focused on topologically protected surface states. While the domain walls of topological materials such as Weyl semimetals with broken inversion or time-reversal symmetry can provide a hunting ground for exploring topological interfacial states, such investigations have received little attention to date. Here, utilizing in-situ cryogenic transmission electron microscopy combined with first-principles calculations, we discover intriguing domain-wall structures in MoTe2, both between polar variants of the low-temperature(T) Weyl phase, and between this and the high-T high-order topological phase. We demonstrate how polar domain walls can be manipulated with electron beams and show that phase domain walls tend to form superlattice-like structures along the c axis. Scanning tunneling microscopy indicates a possible signature of a conducting hinge state at phase domain walls. Our results open avenues for investigating topological interfacial states and unveiling multifunctional aspects of domain walls in topological materials.

cond-mat.mtrl-sci↗

arXiv2019

Systematic beyond-DFT study of binary transition metal oxides

Various methods going beyond density-functional theory (DFT), such as DFT+U, hybrid functionals, meta-GGAs, GW, and DFT-embedded dynamical mean field theory (eDMFT), have been developed to describe the electronic structure of correlated materials, but it is unclear how accurate these methods can be expected to be when applied to a given strongly correlated solid. It is thus of pressing interest to compare their accuracy as they apply to different categories of materials. Here, we introduce a novel paradigm in which a chosen set of beyond-DFT methods is systematically and uniformly tested on a chosen class of materials. For a first application, we choose the target materials to be the binary transition-metal oxides FeO, CoO, MnO, and NiO in their antiferromagnetic phase and present a head-to-head comparison of spectral properties as computed using the various methods. We also compare with available experimental angle-resolved photoemission spectroscopy (ARPES), inverse-photoemission spectroscopy, and with optical absorption. We find both B3LYP and eDMFT can reproduce the experiments quite well, with eDMFT doing best in particular when comparing with the ARPES data.

cond-mat.str-el↗

arXiv2019

Wannier90 as a community code: new features and applications

Wannier90 is an open-source computer program for calculating maximally-localised Wannier functions (MLWFs) from a set of Bloch states. It is interfaced to many widely used electronic-structure codes thanks to its independence from the basis sets representing these Bloch states. In the past few years the development of Wannier90 has transitioned to a community-driven model; this has resulted in a number of new developments that have been recently released in Wannier90 v3.0. In this article we describe these new functionalities, that include the implementation of new features for wannierisation and disentanglement (symmetry-adapted Wannier functions, selectively-localised Wannier functions, selected columns of the density matrix) and the ability to calculate new properties (shift currents and Berry-curvature dipole, and a new interface to many-body perturbation theory); performance improvements, including parallelisation of the core code; enhancements in functionality (support for spinor-valued Wannier functions, more accurate methods to interpolate quantities in the Brillouin zone); improved usability (improved plotting routines, integration with high-throughput automation frameworks), as well as the implementation of modern software engineering practices (unit testing, continuous integration, and automatic source-code documentation). These new features, capabilities, and code development model aim to further sustain and expand the community uptake and range of applicability, that nowadays spans complex and accurate dielectric, electronic, magnetic, optical, topological and transport properties of materials.

cond-mat.mtrl-sci↗

arXiv2019

Negative piezoelectric response of van der Waals layered bismuth tellurohalides

The polarization and piezoelectric response of the BiTe$X$ ($X$=Cl, Br, and I) layered tellurohalides are computed from first principles. The results confirm a mixed ionic-covalent character of the bonding, and demonstrate that the internal structure within each triple layer is only weakly affected by the external stress, while the changes in the charge distribution with stress produce a substantial negative piezoelectric response. This suggests a new mechanism for negative piezoelectric response that should remain robust even in ultra-thin film form in this class of materials.

cond-mat.mtrl-sci↗

arXiv2019

Ferromagnetic Anomalous Hall Effect in Cr-doped Bi$_2$Se$_3$ Thin Films via Surface-State Engineering

The anomalous Hall effect (AHE) is a non-linear Hall effect appearing in magnetic conductors, boosted by internal magnetism beyond what is expected from the ordinary Hall effect. With the recent discovery of the quantized version of the AHE, the quantum anomalous Hall effect (QAHE), in Cr- or V-doped topological insulator (TI) (Sb,Bi)$_2$Te$_3$ thin films, the AHE in magnetic TIs has been attracting significant interest. However, one of the puzzles in this system has been that while Cr- or V-doped (Sb,Bi)$_2$Te$_3$ and V-doped Bi$_2$Se$_3$ exhibit AHE, Cr-doped Bi$_2$Se$_3$ has failed to exhibit even ferromagnetic AHE, the expected predecessor to the QAHE, though it is the first material predicted to exhibit the QAHE. Here, we have successfully implemented ferromagnetic AHE in Cr-doped Bi$_2$Se$_3$ thin films by utilizing a surface state engineering scheme. Surprisingly, the observed ferromagnetic AHE in the Cr-doped Bi$_2$Se$_3$ thin films exhibited only positive slope regardless of the carrier type. We show that this sign problem can be explained by the intrinsic Berry curvature of the system as calculated from a tight-binding model combined with a first-principles method.

cond-mat.mtrl-sci↗

arXiv2018

Metric-wave approach to flexoelectricity within density-functional perturbation theory

Within the framework of density functional perturbation theory (DFPT), we implement and test a novel "metric wave" response-function approach. It consists in the reformulation of an acoustic phonon perturbation in the curvilinear frame that is comoving with the atoms. This means that all the perturbation effects are encoded in the first-order variation of the real-space metric, while the atomic positions remain fixed. This approach can be regarded as the generalization of the uniform strain perturbation of Hamann et al. [D. R. Hamann, X. Wu, K. M. Rabe, and D. Vanderbilt, Phys. Rev. B 71, 035117 (2005)] to the case of inhomogeneous deformations, and greatly facilitates the calculation of advanced electromechanical couplings such as the flexoelectric tensor. We demonstrate the accuracy of our approach with extensive tests on model systems and on bulk crystals of Si and SrTiO$_3$.

cond-mat.mtrl-sci↗

arXiv2018

Surfaces of Axion Insulators

Axion insulators are magnetic topological insulators in which the non-trivial $\mathbb{Z}_2$ index is protected by inversion symmetry instead of time-reversal symmetry. The naturally gapped surfaces of axion insulators give rise to a half-quantized surface anomalous Hall conductivity (AHC), but the sign of the surface AHC cannot be determined from topological arguments. In this paper, we consider topological phenomena at the surface of an axion insulator. To be explicit, we construct a minimal tight-binding model on the pyrochlore lattice and investigate the all-in-all-out (AIAO) and ferromagnetic (FM) spin configurations. We also implement a recently proposed approach for calculating the surface AHC directly, which allows us to explore how the interplay between surface termination and magnetic ordering determines the sign of the half-quantized surface AHC. In the case of AIAO ordering, we show that it is possible to construct a topological state with no protected metallic states on boundaries of any dimension (surfaces, hinges, or corners), although chiral hinge modes do occur for many surface configurations. In the FM case, rotation of the magnetization by an external field offers a promising means of control of chiral hinge modes, which can also appear on surface steps or where bulk domain walls emerge at the surface.

cond-mat.mtrl-sci↗