arXiv subjects

David W. Abraham

Publications and source records attributed to David W. Abraham.

9 recordsLinked to original sources

arXiv2026

Reconfigurable Superconducting Quantum Circuits Enabled by Micro-Scale Liquid-Metal Interconnects

Modular architectures are a promising route toward scalable superconducting quantum processors, but finite fabrication yield and the lack of high quality temporary interconnects impose fundamental limitations on system size. Here, we demonstrate chip-scale liquid-metal interconnects that show promise for plug-and-play superconducting quantum circuits by enabling non-destructive module replacement while maintaining high microwave performance. Using gallium-based liquid metals, we realize high-quality inter-module signal and ground interconnects, comparable in performance to conventional coplanar waveguide resonators. We illustrate consistent device characteristics across three thermal cycles between room temperature and 15 mK, as well as the ability to reform superconducting connections following module replacement. A width-dependent resonance frequency shift reveals a significant kinetic inductance fraction, which we attribute to the presence of $β$-phase tantalum as confirmed by X-ray characterization. Finally, we investigate power-dependent loss mechanisms and observe high-power dissipative nonlinearities qualitatively consistent with a readout-power heating model. These results establish liquid metals as viable chip-scale interconnects for reconfigurable, modular superconducting quantum systems.

quant-ph↗

arXiv2024

Low-loss liquid metal interconnects for superconducting quantum circuits

Building a modular architecture with superconducting quantum computing chips is one of the means to achieve qubit scalability, allowing the screening, selection, replacement, and integration of individual qubit modules into large quantum systems. However, the nondestructive replacement of modules within a compact architecture remains a challenge. Liquid metals, specifically gallium alloys, can be alternatives to solid-state galvanic interconnects. This is motivated by their self-healing, self-aligning, and other desirable fluidic properties, potentially enabling the nondestructive replacement of modules at room temperatures, even after operating the entire system at millikelvin regimes. In this study, we present coplanar waveguide resonators (CPWRs) interconnected by gallium alloy droplets, achieving high internal quality factors up to nearly one million and demonstrating performance on par with the continuous solid-state CPWRs. Leveraging the desirable fluidic properties of gallium alloys at room temperature and their compact design, we envision a modular quantum system enabled by liquid metals.

physics.app-ph↗

arXiv2015

Bulk and surface loss in superconducting transmon qubits

Decoherence of superconducting transmon qubits is purported to be consistent with surface loss from two-level systems on the substrate surface. Here, we present a study of surface loss in transmon devices, explicitly designed to have varying sensitivities to different surface loss contributors. Our experiments also encompass two particular different sapphire substrates, which reveal the onset of a yet unknown additional loss mechanism outside of surface loss for one of the substrates. Tests across different wafers and devices demonstrate substantial variation, and we emphasize the importance of testing large numbers of devices for disentangling different sources of decoherence.

quant-ph↗

arXiv2015

Characterizing a Four-Qubit Planar Lattice for Arbitrary Error Detection

Quantum error correction will be a necessary component towards realizing scalable quantum computers with physical qubits. Theoretically, it is possible to perform arbitrarily long computations if the error rate is below a threshold value. The two-dimensional surface code permits relatively high fault-tolerant thresholds at the ~1% level, and only requires a latticed network of qubits with nearest-neighbor interactions. Superconducting qubits have continued to steadily improve in coherence, gate, and readout fidelities, to become a leading candidate for implementation into larger quantum networks. Here we describe characterization experiments and calibration of a system of four superconducting qubits arranged in a planar lattice, amenable to the surface code. Insights into the particular qubit design and comparison between simulated parameters and experimentally determined parameters are given. Single- and two-qubit gate tune-up procedures are described and results for simultaneously benchmarking pairs of two-qubit gates are given. All controls are eventually used for an arbitrary error detection protocol described in separate work [Corcoles et al., Nature Communications, 6, 2015]

quant-ph↗

arXiv2014

Blackbox Quantization of Superconducting Circuits using exact Impedance Synthesis

We propose a new quantization method for superconducting electronic circuits involving a Josephson junction device coupled to a linear microwave environment. The method is based on an exact impedance synthesis of the microwave environment considered as a blackbox with impedance function Z(s). The synthesized circuit captures dissipative dynamics of the system with resistors coupled to the reactive part of the circuit in a non-trivial way. We quantize the circuit and compute relaxation rates following previous formalisms for lumped element circuit quantization. Up to the errors in the fit our method gives an exact description of the system and its losses.

quant-ph↗

arXiv2013

Implementing a strand of a scalable fault-tolerant quantum computing fabric

Quantum error correction (QEC) is an essential step towards realising scalable quantum computers. Theoretically, it is possible to achieve arbitrarily long protection of quantum information from corruption due to decoherence or imperfect controls, so long as the error rate is below a threshold value. The two-dimensional surface code (SC) is a fault-tolerant error correction protocol} that has garnered considerable attention for actual physical implementations, due to relatively high error thresholds ~1%, and restriction to planar lattices with nearest-neighbour interactions. Here we show a necessary element for SC error correction: high-fidelity parity detection of two code qubits via measurement of a third syndrome qubit. The experiment is performed on a sub-section of the SC lattice with three superconducting transmon qubits, in which two independent outer code qubits are joined to a central syndrome qubit via two linking bus resonators. With all-microwave high-fidelity single- and two-qubit nearest-neighbour entangling gates, we demonstrate entanglement distributed across the entire sub-section by generating a three-qubit Greenberger-Horne-Zeilinger (GHZ) state with fidelity ~94%. Then, via high-fidelity measurement of the syndrome qubit, we deterministically entangle the otherwise un-coupled outer code qubits, in either an even or odd parity Bell state, conditioned on the syndrome state. Finally, to fully characterize this parity readout, we develop a new measurement tomography protocol to obtain a fidelity metric (90% and 91%). Our results reveal a straightforward path for expanding superconducting circuits towards larger networks for the SC and eventually a primitive logical qubit implementation.

quant-ph↗

arXiv2013

Improved superconducting qubit coherence using titanium nitride

We demonstrate enhanced relaxation and dephasing times of transmon qubits, up to ~ 60 μs by fabricating the interdigitated shunting capacitors using titanium nitride (TiN). Compared to lift-off aluminum deposited simultaneously with the Josephson junction, this represents as much as a six-fold improvement and provides evidence that previous planar transmon coherence times are limited by surface losses from two-level system (TLS) defects residing at or near interfaces. Concurrently, we observe an anomalous temperature dependent frequency shift of TiN resonators which is inconsistent with the predicted TLS model.

quant-ph↗

arXiv2011

Thermoelectric Spin-Transfer Torque MRAM with Sub-Nanosecond Bi-Directional Writing using Magnonic Current

A new genre of Spin-Transfer Torque (STT) MRAM is proposed, in which bi-directional writing is achieved using thermoelectrically controlled magnonic current as an alternative to conventional electric current. The device uses a magnetic tunnel junction (MTJ), which is adjacent to a non-magnetic metallic and a ferrite film. This film stack is heated or cooled by a Peltier element which creates a bi-directional magnonic pulse in the ferrite film. Conversion of magnons to spin current occurs at the ferrite-metal interface, and the resulting spin-transfer torque is used to achieve sub-nanosecond precessional switching of the ferromagnetic free layer in the MTJ. Compared to electric current driven STT-MRAM with perpendicular magnetic anisotropy (PMA), thermoelectric STT-MRAM reduces the overall magnetization switching energy by more than 40% for nano-second switching, combined with a write error rate (WER) of less than 10-9 and a lifetime of 10 years or higher. The combination of higher thermal activation energy, sub-nanosecond read/write speed, improved tunneling magneto-resistance (TMR) and tunnel barrier reliability make thermoelectric STT-MRAM a promising choice for future non-volatile memory applications.

cond-mat.mtrl-sci↗

arXiv2011

Magnonic spin-transfer torque MRAM with low power, high speed, and error-free switching

A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The magnonic pulses are used to destabilize the magnetic free layer from its initial direction, and are followed immediately by a bipolar electric current exerting conventional spin-transfer torque on the free layer. The combination of thermal and electric currents greatly reduces switching errors, and simultaneously reduces the electric switching current density by more than an order of magnitude as compared to conventional STT-MRAM. The energy efficiency of several possible electro-thermal circuit designs have been analyzed numerically. As compared to STT-MRAM with perpendicular magnetic anisotropy, magnonic STT-MRAM reduces the overall switching energy by almost 80%. Furthermore, the lower electric current density allows the use of thicker tunnel barriers, which should result in higher tunneling magneto-resistance and improved tunnel barrier reliability. The combination of lower power, improved reliability, higher integration density, and larger read margin make magnonic STT-MRAM a promising choice for future non-volatile storage.

cond-mat.mtrl-sci↗