arXiv subjects

David W. Kanaar

Publications and source records attributed to David W. Kanaar.

9 recordsLinked to original sources

arXiv2026

Rapid Charge Stability Diagram Generation from Device-level Modeling of Semiconductor Quantum Dots

Self-consistent Schrödinger-Poisson calculations are a powerful tool for predicting the behavior of layered semiconductor quantum dot devices. However, characterization of charge stability diagrams through fully simulated gate-voltage sweeps is computationally expensive. Combining a Multi-Domain Multi-Model (MDMM) approach with an automated tuning routine, we identify gate voltages associated with selected charge configurations. This small set of self-consistent simulations can be augmented with Full Configuration Interaction (FCI) energy calculations to extract charging energies, lever arms, and interdot Coulomb interactions to directly parameterize a Hubbard model for rapid charge stability diagram generation. For an Intel Tunnel Falls Si/SiGe device, we demonstrate the Hubbard model's ability to reproduce charge stability diagrams at a fraction of the computational cost in comparison to voltage bias sweeps. We further compare the simulated diagrams to experimental data and demonstrate qualitative agreement. Our result represents a step towards predictive digital twin models for semiconductor quantum dot devices. Finally, we apply this workflow towards lever arm engineering in a second device, demonstrating that the method extends to multiple architectures.

cond-mat.mes-hall↗

arXiv2026

Silicon-Germanium Heterostructures with Enhanced Valley Splitting for Spin Qubits

Achieving valley splittings well in excess of the thermal energy of electrons and avoiding valley excitations is essential for the consistent initialization, operation and readout of gate-defined Si spin qubits. In this work, we present a device-level optimization strategy for pushing valley splittings to between 1 and 5 meV, well beyond values reported in nearly all previous theoretical studies. Using device-scale simulations that incorporate atomistic alloy disorder through a 1D tight-binding theory, we demonstrate that our proposed approach yields large valley splittings with a tight distribution across disorder realizations, a key requirement for reproducible qubit performance at scale. The approach rests on an unorthodox Si/SiGe heterostructure design combining a narrow quantum well, a small Ge spike, and a pure-Ge cap. We corroborate these predictions with targeted atomistic density functional theory calculations. These results offer a clear path forward for scalable Si/SiGe spin qubit devices and, if realized experimentally, effectively eliminate valley splitting as an existential problem for large scale SiGe-based quantum processors.

cond-mat.mes-hall↗

arXiv2025

Fast charge noise sensing using a spectator valley state in a singlet-triplet qubit

Semiconductor spin qubits are a promising platform for quantum computing but remain vulnerable to charge noise. Accurate, in situ measurement of charge noise could enable closed-loop control and improve qubit performance. Here, we propose a method for real-time detection of charge noise using a silicon singlet-triplet qubit with one electron initialized in an excited valley state. This valley excitation acts as a spectator degree of freedom, coupled to a high-quality resonator via the exchange interaction, which is sensitive to charge-noise-induced voltage fluctuations. Dispersive readout of the resonator enables a continuous, classical measurement of exchange fluctuations during qubit operation. Signal-to-noise analysis shows that, under realistic device parameters, sub-millisecond measurement times are possible using a quantum-limited amplifier. Even without such an amplifier, similar performance is achievable with appropriately engineered resonator parameters. This approach allows the probe to monitor slow drift in exchange in real time, opening the door to feedback and feedforward strategies for maintaining high-fidelity quantum operations. Importantly, the protocol preserves spin coherence and can be run concurrently with qubit logic gates.

cond-mat.mes-hall↗

arXiv2024

Proposed real-time charge noise measurement via valley state reflectometry

We theoretically propose a method to perform in situ measurements of charge noise during logical operations in silicon quantum dot spin qubits. Our method does not require ancillary spectator qubits but makes use of the valley degree of freedom in silicon. Sharp interface steps or alloy disorder in the well provide a valley transition dipole element that couples to the field of an on-chip microwave resonator, allowing rapid reflectometry of valley splitting fluctuations caused by charge noise. We derive analytic expressions for the signal-to-noise ratio that can be expected and use tight binding simulations to extract the key parameters (valley splitting and valley dipole elements) under realistic disorder. We find that unity signal-to-noise ratio can often be obtained with measurement times below 1ms, faster than typical decoherence times, opening the potential for closed-loop control, real-time recalibration, and feedforward circuits

cond-mat.mes-hall↗

arXiv2023

Robust shaped pulses for arrays of superconducting or semiconductor spin qubits with fixed Ising coupling

A major current challenge in solid-state quantum computing is to scale qubit arrays to a larger number of qubits. This is hampered by the complexity of the control wiring for the large number of independently tunable interqubit couplings within these arrays. One approach to simplifying the problem is to use a qubit array with fixed Ising ($ZZ$) interactions. When simultaneously driving a specific subset of qubits in such a system, the dynamics are confined to a set of commuting $\mathfrak{su}$(2) subalgebras. Within these $\mathfrak{su}$(2)s we describe how to perform $X$-gates and $\fracπ{2}$ $ZZ$ rotations robustly against either leakage, which is the main source of error in transmon qubits, or coupling fluctuations, which is the main source of infidelity in flux or semiconductor spin qubits. These gates together with virtual-$z$ gates form a universal set of gates for quantum computing. We construct this set of robust gates for two-edge, three-edge, and four-edge vertices, which compose all existing superconducting qubit and semiconductor spin qubit arrays.

cond-mat.mes-hall↗

arXiv2023

Neural-network-designed three-qubit gates robust against charge noise and crosstalk in silicon

Spin qubits in semiconductor quantum dots are a promising platform for quantum computing, however scaling to large systems is hampered by crosstalk and charge noise. Crosstalk here refers to the unwanted off-resonant rotation of idle qubits during the resonant rotation of the target qubit. For a three-qubit system with crosstalk and charge noise, it is difficult to analytically create gate protocols that produce three-qubit gates, such as the Toffoli gate, directly in a single shot instead of through the composition of two-qubit gates. Therefore, we numerically optimize a physics-informed neural network to produce theoretically robust shaped pulses that generate a Toffoli-equivalent gate. Additionally, robust $\fracπ{2}$ $X$ and CZ gates are also presented in this work to create a universal set of gates robust against charge noise. The robust pulses maintain an infidelity of $10^{-3}$ for average quasistatic fluctuations in the voltage of up to a few mV instead of tenths of mV for non-robust pulses.

cond-mat.mes-hall↗

arXiv2022

Nonadiabatic quantum control of quantum dot arrays with fixed exchange using Cartan decomposition

In semiconductor spin qubits which typically interact through short-range exchange coupling, shuttling of spin is a practical way to generate quantum operations between distant qubits. Although the exchange is often tunable through voltages applied to gate electrodes, its minimal value can be significantly large, which hinders the applicability of existing shuttling protocols to such devices, requiring a different approach. In this work, we extend our previous results for double- and triple-dot systems, and describe a method for implementing spin shuttling in long chains of quantum dots in a nonadiabatic manner. We make use of Cartan decomposition to break down the interacting problem into simpler problems in a systematic way, and use dynamical invariants to design smooth nonadiabatic pulses that can be implemented in devices with modest control bandwidth. Finally, we discuss the extensibility of our results to directed shuttling of spin states on two-dimensional lattices of quantum dots with fixed coupling.

cond-mat.mes-hall↗

arXiv2022

Two-qubit CZ gates robust against charge noise in silicon while compensating for crosstalk using neural network

The fidelity of two-qubit gates using silicon spin qubits is limited by charge noise. When attempting to dynamically compensate for charge noise using local echo pulses, crosstalk can cause complications. We present a method of using a deep neural network to optimize the components of an analytically designed composite pulse sequence, resulting in a two-qubit gate robust against charge noise errors while also taking crosstalk into account. We analyze two experimentally motivated scenarios. For a scenario with strong EDSR driving and negligible crosstalk, the composite pulse sequence yields up to an order of magnitude improvement over a simple cosine pulse. In a scenario with moderate ESR driving and appreciable crosstalk such that simple analytical control fields are not effective, optimization using the neural network approach allows one to maintain order-of-magnitude improvement despite the crosstalk.

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arXiv2021

Single-tone pulse sequences and robust two-tone shaped pulses for three silicon spin qubits with always-on exchange

Quantum computation requires high-fidelity single-qubit and two-qubit gates on a scalable platform. Silicon spin qubits are a promising platform toward realization of this goal. In this paper we show how to perform single-qubit and CZ gates in a linear chain of three spin qubits with always-on exchange coupling, which is relevant for certain dot- and donor-based silicon devices. We also show how to make the CZ gate robust against both charge noise and pulse length error using a two-tone pulse shaping method. The robust pulse maintains a fidelity of 99.99% at 3.5% fluctuations in exchange or pulse amplitude, which is an improvement over the uncorrected pulses where this fidelity can only be maintained for fluctuations in exchange up to 2% or up to 0.2% in amplitude.

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