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David W. Lipke

Publications and source records attributed to David W. Lipke.

2 recordsLinked to original sources

The Case Against Hall-Petch Hardening in High Entropy Carbide Ceramics

Grain size is often used with the Hall-Petch relationship to justify differences in hardness in ceramic materials. Herein, hardness does not vary systematically with grain-size for fully dense, single-phase (Cr,Mo,Ta,V,W)C1-δ high entropy carbide ceramics for grain sizes that varied by a factor of three. Fully dense, single-phase ceramics with grain sizes from 9.3+/-0.3 to 28.8+/-0.7 microns exhibited a pronounced indentation size effect, with Vickers hardness decreasing from ~28-30 GPa at 0.49 N to ~20-21 GPa at 9.81 N, and Berkovich nanohardness ranging from 26 to 30 GPa at 10 mN. However, at a given load, hardness remained within a narrow range across the grain-size series, and no consistent Hall-Petch dependence was resolved. The lack of grain-size dependence likely indicates that the deformation volume sampled by the indenter was not controlled by grain-boundary interactions; instead, hardness was governed primarily by indentation load and local response of the rock salt carbide matrix.

cond-mat.mtrl-sci

Grain Growth Kinetics in (Cr,Mo,Ta,V,W)C1-δ High-Entropy Carbide Ceramics

Understanding grain-boundary mobility during spark plasma sintering can enable microstructure control in high-entropy carbides, yet quantitative grain-growth kinetics remain scarce. In this work, grain growth kinetics and densification behavior were investigated for single-phase fully dense (Cr,Mo,Ta,V,W)C1-δ high-entropy carbide ceramics. Specimens were densified by spark plasma sintering for a constant dwell time of 10 min at temperatures between 1750 °C and 1950 °C to isolate the role of temperature on microstructural evolution. Increasing sintering temperature produced grain growth and increased lattice parameter, while maintaining a single-phase rock salt structure. Elemental mapping showed a progressive reduction of Ta segregation with increasing sintering temperature, suggesting enhanced chemical homogenization at elevated temperatures. Grain growth kinetics were analyzed using a normal grain growth model with an assumed growth exponent of n=3, physically reasonable for grain-boundary-controlled growth influenced by solute and vacancy pinning. Arrhenius analysis of the growth factor yielded an apparent activation energy of approximately 620 kJ mol-1, comparable to diffusion-controlled processes in refractory transition-metal carbides. Densification curves revealed rapid consolidation prior to reaching the peak temperature followed by temperature-dominated grain coarsening. These results establish quantitative relationships between densification temperature, grain growth, and diffusion kinetics in a carbide system, providing insight into the microstructural stability of high-entropy, ultra-high-temperature carbide ceramics.

cond-mat.mtrl-sci