arXiv subjects

Davide Romanin

Publications and source records attributed to Davide Romanin.

14 recordsLinked to original sources

arXiv2025

Discovery of magnetic-field-tunable density waves in a layered altermagnet

Altermagnets recently came into the spotlight as a new class of magnetic materials, arising as a consequence of specific crystal symmetries. They are characterized by a spin-polarized electronic band structure similar to ferromagnets, but with net zero magnetization, and touted as a promising platform to host a slew of exotic properties, many of which are yet to be explored. Here we study a new layered triangular lattice altermagnet, Co-intercalated NbSe$_2$ using scanning tunneling microscopy and spectroscopy (STM/S). Differential conductance dI/dV spectra at low temperature reveal a surprising partial gap opening centered at the Fermi level, which is not captured by density functional theory calculations of the system in the pure altermagnetic state. Spatial mapping using spectroscopic-imaging STM and spin-polarized STM further reveals emergent tri-directional charge and spin density modulations with a 2a$_0$ wave length. Interestingly, we discover that out-of-plane magnetic field can serve as a knob to tune the amplitudes of the modulations as well as alter the overall electronic density-of-states in a manner that is strongly dependent on the field direction and strength. This can be attributed to the tilting of spins by the external magnetic field, which can have profound implications on the electronic properties of the altermagnet. By providing elusive atomic-scale insights, our work uncovers a tunable density wave accompanied by concomitant changes in the electronic band structure, and sets the foundation for studies of correlated electronic phenomena in altermagnets.

cond-mat.str-el↗

arXiv2025

Robust spin splitting and fermiology in a layered altermagnet

Altermagnetism defies conventional classifications of collinear magnetic phases, standing apart from ferromagnetism and antiferromagnetism with its unique combination of spin-dependent symmetries, net-zero magnetization, and anomalous Hall transport. Although altermagnetic states have been realized experimentally, their integration into functional devices has been hindered by the structural rigidity and poor tunability of existing materials. First, through cobalt intercalation of the superconducting 2H-NbSe$_2$ polymorph, we induce and stabilize a robust altermagnetic phase and using both theory and experiment, we directly observe the lifting of Kramers degeneracy. Additionally, we present spectroscopic insight into a previously hinted low-temperature phase, and provide evidence of its electronic origin. While shedding light on overlooked aspects of altermagnetism, these findings open pathways to spin-based technologies and lay a foundation for advancing the emerging field of altertronics.

cond-mat.str-el↗

arXiv2023

Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe2 on GaP(111) Heterostructure

The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over more established 3D semiconductors while retaining some specificities of 2D materials. Understanding and exploiting these phenomena hinge on knowing the electronic properties and the hybridization of these structures. Here, we demonstrate that rhombohedral-stacked bilayer (AB stacking) can be obtained by molecular beam epitaxy growth of tungsten diselenide (WSe2) on gallium phosphide (GaP) substrate. We confirm the presence of 3R-stacking of the WSe2 bilayer structure using scanning transmission electron microscopy (STEM) and micro-Raman spectroscopy. Also, we report high-resolution angle-resolved photoemission spectroscopy (ARPES) on our rhombohedral-stacked WSe2 bilayer grown on GaP(111)B substrate. Our ARPES measurements confirm the expected valence band structure of WSe2 with the band maximum located at the gamma point of the Brillouin zone. The epitaxial growth of WSe2 on GaP(111)B heterostructures paves the way for further studies of the fundamental properties of these complex materials, as well as prospects for their implementation in devices to exploit their promising electronic and optical properties.

cond-mat.mes-hall↗

arXiv2022

Competing oxygen evolution reaction mechanisms revealed by high-speed compressive Raman imaging

Transition metal oxides are state-of-the-art materials for catalysing the oxygen evolution reaction (OER), whose slow kinetics currently limit the efficiency of water electrolysis. However, microscale physicochemical heterogeneity between particles, dynamic reactions both in the bulk and at the surface, and an interplay between particle reactivity and electrolyte makes probing the OER challenging. Here, we overcome these limitations by applying state-of-the-art compressive Raman imaging to uncover competing bias-dependent mechanisms for the OER in a solid electrocatalyst, α-Li2IrO3. By spatially and temporally tracking changes in the in- and out-of-plane Ir-O stretching modes - identified by density functional theory calculations - we follow catalytic activation and charge accumulation following ion exchange under a variety of electrolytes, particle compositions and cycling conditions. We extract velocities of phase fronts and demonstrate that at low overpotentials oxygen is evolved by the combination of an electrochemical-chemical mechanism and a classical electrocatalytic adsorbate mechanism, whereas at high overpotentials only the latter occurs. These results provide strategies to promote mechanisms for enhanced OER performances, and highlight the power of compressive Raman imaging for low-cost, chemically specific tracking of microscale reaction dynamics in a broad range of systems where ion and electron exchange can be coupled to structural changes, i.e. catalysts, battery materials, memristors, etc.

cond-mat.mtrl-sci↗

arXiv2022

Migdal-Eliashberg theory of multi-band high-temperature superconductivity in field-effect-doped hydrogenated (111) diamond

We perform single- and multi-band Migdal-Eliashberg (ME) calculations with parameters exctracted from density functional theory (DFT) simulations to study superconductivity in the electric-field-induced 2-dimensional hole gas at the hydrogenated (111) diamond surface. We show that according to the Eliashberg theory it is possible to induce a high-T$_{\text{c}}$ superconducting phase when the system is field-effect doped to a surface hole concentration of $6\times10^{14}\,$cm$^{-2}$, where the Fermi level crosses three valence bands. Starting from the band-resolved electron-phonon spectral functions $α^2F_{jj'}(ω)$ computed ab initio, we iteratively solve the self-consistent isotropic Migdal-Eliashberg equations, in both the single-band and the multi-band formulations, in the approximation of a constant density of states at the Fermi level. In the single-band formulation, we find T$_{\text{c}}\approx40\,$K, which is enhanced between $4\%$ and $8\%$ when the multi-band nature of the system is taken into account. We also compute the multi-band-sensistive quasiparticle density of states to act as a guideline for future experimental works.

cond-mat.supr-con↗

arXiv2022

High pressure tuning of magnon-polarons in the layered antiferromagnet FePS$_3$

Magnetic layered materials have emerged recently as promising systems to introduce magnetism in structures based on two-dimensional (2D) materials and to investigate exotic magnetic ground states in the 2D limit. In this work, we apply high hydrostatic pressures up to P = 8.7 GPa to the bulk layered antiferromagnet FePS$_3$ to tune the collective lattice excitations (phonons) in resonance with magnetic excitations (magnons). Close to P = 4 GPa, the magnon-phonon resonance is achieved and the strong coupling between these collective modes leads to the formation of new quasi-particles, the magnon-polarons, evidenced in our low temperature Raman scattering experiments by a particular avoided crossing behavior between the phonon and the doubly degenerate antiferromagnetic magnon. At the pressure-induced magnon-phonon resonance, three distinct coupled modes emerge. As it is mainly defined by intralayer properties, we show that the energy of the magnon is nearly pressure independent. We additionally apply high magnetic fields up to B = 30 T to fully identify and characterize the magnon excitations, and to explore the different magnon-polaron regimes for which the phonon has an energy lower-, equal to-, or higher- than the magnon energy. The description of our experimental data requires introducing a phonon-phonon coupling not taken into account in actual calculations.

cond-mat.mes-hall↗

arXiv2022

Highly tunable optics across a topological transition in organic polymers

Controllable topological phase transitions are appealing as they allow for tunable single particle electronic properties. Here, by using state-of-the-art manybody perturbation theory techniques, we show that the topological $Z_2$ phase transition occurring in the single particle spectrum of the recently synthetized ethynylene bridged polyacene polymers is accompanied by a topological excitonic phase transition: the band inversion in the non-trivial phase yields real-space exciton wave functions in which electrons and holes exchange orbital characters with respect to the trivial phase. The topological excitonic phase transition results in a broad tunability of the singlet-triplet splittings, opening appealing perspectives for the occurrence of singlet fission. Finally, the flatness of the single-particle electronic structure in the topological non trivial phase leads to negatively dispersing triplet excitons in a large portion of the Brillouin zone, opening a route for spontaneously coherent energy transport at room temperature.

cond-mat.mes-hall↗

arXiv2020

Strong band-filling-dependence of the scattering lifetime in gated MoS2 nanolayers induced by the opening of intervalley scattering channels

Gated molybdenum disulphide (MoS2) exhibits a rich phase diagram upon increasing electron doping, including a superconducting phase, a polaronic reconstruction of the bandstructure, and structural transitions away from the 2H polytype. The average time between two charge-carrier scattering events - the scattering lifetime - is a key parameter to describe charge transport and obtain physical insight in the behavior of such a complex system. In this work, we combine the solution of the Boltzmann transport equation (based on ab-initio density functional theory calculations of the electronic bandstructure) with the experimental results concerning the charge-carrier mobility, in order to determine the scattering lifetime in gated MoS2 nanolayers as a function of electron doping and temperature. From these dependencies, we assess the major sources of charge-carrier scattering upon increasing band filling, and discover two narrow ranges of electron doping where the scattering lifetime is strongly suppressed. We indentify the opening of additional intervalley scattering channels connecting the simultaneously-filled K/K' and Q/Q' valleys in the Brillouin zone as the source of these reductions, which are triggered by the two Lifshitz transitions induced by the filling of the high-energy Q/Q' valleys upon increasing electron doping.

cond-mat.mes-hall↗

arXiv2020

Mapping multi-valley Lifshitz transitions induced by field-effect doping in strained MoS2 nanolayers

Gate-induced superconductivity at the surface of nanolayers of semiconducting transition metal dichalcogenides (TMDs) has attracted a lot of attention in recent years, thanks to the sizeable transition temperature, robustness against in-plane magnetic fields beyond the Pauli limit, and hints to a non-conventional nature of the pairing. A key information necessary to unveil its microscopic origin is the geometry of the Fermi surface hosting the Cooper pairs as a function of field-effect doping, which is dictated by the filling of the inequivalent valleys at the K/K$^{\prime}$ and Q/Q$^{\prime}$ points of the Brillouin Zone. Here, we achieve this by combining Density Functional Theory calculations of the bandstructure with transport measurements on ion-gated 2H-MoS$_{2}$ nanolayers. We show that, when the number of layers and the amount of strain are set to their experimental values, the Fermi level crosses the bottom of the high-energy valleys at Q/Q$^{\prime}$ at doping levels where characteristic kinks in the transconductance are experimentally detected. We also develop a simple 2D model which is able to quantitatively describe the broadening of the kinks observed upon increasing temperature. We demonstrate that this combined approach can be employed to map the dependence of the Fermi surface of TMD nanolayers on field-effect doping, detect Lifshitz transitions, and provide a method to determine the amount of strain and spin-orbit splitting between sub-bands from electric transport measurements in real devices.

cond-mat.mes-hall↗

arXiv2020

Field-effect induced superconductivity in surfaces of tetrahedrally coordinated semiconductors: the case of (111) hydrogenated silicon

We show the possibility of inducing a superconductive phase transition in tetrahedrally coordinated semiconductors via field-effect (FET) doping by taking as an example the hydrogenated (111) silicon surface. We perform density functional theory computations of the electronic and vibrational properties of the system in the proper FET geometry, by taking into account the applied electric field and the induced charge density. Using a simplified superconductive model at $q=Γ$ and the McMillan/Allen-Dynes formula, we get an estimate of the superconductive critical temperature. We observe that, by heavily doping with holes at $n_{dop}=6\cdot10^{14}$ cm$^{-2}$, we get an electron-phonon coupling constant of $λ_{Si}=0.98$ and a superconductive phase transition at $T_{\text{c}}\in[8.94;10.91]$ K, with $μ^*\in[0.08;0.12]$.

cond-mat.supr-con↗

arXiv2019

Two-dimensional hole transport in ion-gated diamond surfaces: A brief review

Electrically-conducting diamond is a promising candidate for next-generation electronic, thermal and electrochemical applications. One of the major obstacles towards its exploitation is the strong degradation that some of its key physical properties - such as the carrier mobility and the superconducting transition temperature - undergo upon the introduction of disorder. This makes the two-dimensional hole gas induced at its surface by electric field-effect doping particularly interesting from both a fundamental and an applied perspective, since it strongly reduces the amount of extrinsic disorder with respect to the standard boron substitution. In this short review, we summarize the main results achieved so far in controlling the electric transport properties of different field-effect doped diamond surfaces via the ionic gating technique. We analyze how ionic gating can tune their conductivity, carrier density and mobility, and drive the different surfaces across the insulator-to-metal transition. We review their strongly orientation-dependent magnetotransport properties, with a particular focus on the gate-tunable spin-orbit coupling shown by the (100) surface. Finally, we discuss the possibility of field-induced superconductivity in the (110) and (111) surfaces as predicted by density functional theory calculations.

cond-mat.mes-hall↗

arXiv2019

Theoretical explanation of electric field-induced superconductive critical temperature shifts in Indium thin films

We calculate the effect of a static electric field on the superconductive critical temperature of Indium thin films in the framework of proximity effect Eliashberg theory, in order to explain 60 years old experimental data. Since in the theoretical model we employ all quantities of interest can be computed ab-initio (i.e. electronic densities of states, Fermi energy shifts and Eliashberg spectral functions), the only free parameter is in general the thickness of the surface layer where the electric field acts. However, in the weak electrostatic field limit Thomas-Fermi approximation is still valid and therefore no free parameters are left, as this perturbed layer is known to have a thickness of the order of the Thomas-Fermi screening length. We show that the theoretical model can reproduce experimental data, even when the magnitude of the induced charge densities are so small to be usually neglected.

cond-mat.supr-con↗

arXiv2019

Electric field exfoliation and high-T$_{\text{C}}$ superconductivity in field-effect hole-doped hydrogenated diamond (111)

We investigate the possible occurrence of field-effect induced superconductivity in the hydrogenated $(111)$ diamond surface by first-principles calculations. By computing the band alignment between bulk diamond and the hydrogenated surface we show that the electric field exfoliates the sample, separating the electronic states at the valence band top from the bulk projected ones. At the hole doping values considered here, ranging from $n=2.84\times10^{13}$cm$^{-2}$ to $n=6\times 10^{14} $ cm$^{-2}$, the valence band top is composed of up to three electronic bands hosting holes with different effective masses. These bands resemble those of the undoped surface, but they are heavily modified by the electric field and differ substantially from a rigid doping picture. We calculate superconducting properties by including the effects of charging of the slab and of the electric field on the structural properties, electronic structure, phonon dispersion and electron-phonon coupling. We find that at doping as large as $n=6\times 10^{14} $ cm$^{-2}$, the electron-phonon interaction is $λ=0.81$ and superconductivity emerges with $T_{\text{C}}\approx 29-36$K. Superconductivity is mostly supported by in-plane diamond phonon vibrations and to a lesser extent by some out-of-plane vibrations. The relevant electron-phonon scattering processes involve both intra and interband scattering so that superconductivity is multiband in nature.

cond-mat.supr-con↗

arXiv2018

Anomalous screening of an electrostatic field at the surface of niobium nitride

The interaction between an electric field and the electric charges in a material is described by electrostatic screening, which in metallic systems is commonly thought to be confined within a distance of the order of the Thomas-Fermi length. The validity of this picture, which holds for surface charges up to $\sim 10^{13}\,\mathrm{cm^{-2}}$, has been recently questioned by several experimental results when dealing with larger surface charges, such as those routinely achieved via the ionic gating technique. Whether these results can be accounted for in a purely electrostatic picture is still debated. In this work, we tackle this issue by calculating the spatial dependence of the charge carrier density in thin slabs of niobium nitride via an ab initio density functional theory approach in the field-effect transistor configuration. We find that perturbations induced by surface charges $\lesssim 10^{14}\,\mathrm{cm^{-2}}$ are mainly screened within the first layer, while those induced by larger surface charges $\sim 10^{15}\,\mathrm{cm^{-2}}$ can penetrate over multiple atomic layers, in reasonable agreement with the available experimental data. Furthermore, we show that a significant contribution to the screening of large fields is associated not only to the accumulation layer of the induced charge carriers at the surface, but also to the polarization of the pre-existing charge density of the undoped system.

cond-mat.mes-hall↗