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Davie Mtsuko

Publications and source records attributed to Davie Mtsuko.

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Effects of Rashba-spin-orbit coupling on superconducting boron-doped nanocrystalline diamond films: evidence of interfacial triplet superconductivity

Among the many remarkable properties of diamond, the ability to superconduct when heavily doped with boron has attracted much interest in the carbon community. When considering the nanocrystalline boron doped system, the reduced dimensionality and confinement effects have led to several intriguing observations most notably, signatures of a mixed superconducting phase. Here we present ultra-high-resolution transmission electron microscopy imaging of the grain boundary and demonstrate how the complex microstructure leads to enhanced carrier correlations. We observe hallmark features of spin-orbit coupling (SOC) manifested as the weak anti-localization effect. The enhanced SOC is believed to result from a combination of inversion symmetry breaking at the grain boundary interfaces along with antisymmetric confinement potential between grains, inducing a Rashba-type SOC. From a pronounced zero bias peak in the differential conductance, we demonstrate signatures of a triplet component believed to result from spin mixing caused by tunneling of singlet Cooper pairs through such Rashba-SOC grain boundary junctions.

cond-mat.supr-con

Finite bias dependent evolution of superconductor-insulator transition and Zero Bias Conductance in boron doped nanodiamond films

We report on transport features in heavily boron doped nanocrystalline diamond (BNCD) films which are not seen in conventional (s-wave) granular superconductors. Observations include an anomalous resistance peak near to the superconducting transition temperature as well as a strong zero bias conductance peak in the current-voltage spectra. The effect of finite bias current on the evolution of the resistance peak is systematically investigated in this system. The shape of the resistance-temperature curves near the critical temperature is seen to be strongly influenced by both magnetic field and bias current. As the bias current is lowered the resistance peak becomes more pronounced whereas when the magnetic field is varied the peak shifts towards lower temperatures, the resistance upturn shows a quadratic temperature dependence as expected for a Kondo transition. We find that a number of transport features such as resistance peak height, zero bias conduction peak height and width as well as magnetoresistance peaks scale according to a power law dependence. We interpret these features as a result of a charge-Kondo effect where hole dopants act as degenerate Kondo impurities by opening additional pseudo-spin scattering channels.

cond-mat.supr-con

Non-s wave superconductivity in boron-doped nanodiamond films with 0-π Josephson junction array

Superconducting transport properties of granular materials are greatly influenced by the microstructure. We show that in heavily boron-doped diamond films (HBDDF) films some sharp transport features can be manipulated by applying a magnetic field and controlled finite bias current. We demonstrate the conductivity cross-over from dirty metal to the superconducting state through an insulating peak arising at a very low current or magnetic field region and particularly pronounced negative magnetoresistance with periodic oscillatory features. The current-voltage characteristics show features of the Berezinskii-Kosterlitz-Thouless (BKT) phase transitions which verifies the two-dimensional structure in HBDDF observed recently. A zero bias conductance peak can be attributed to the Andreev bound state formed at the grain boundaries of diamond nanocrystals. The set of observations can be qualitatively explained consistently through the concept of a superconducting transition with a non-s wave order parameter in the diamond heterostructures.

cond-mat.supr-con

Observation of Shubnikov de Haas and Aharanov-Bohm oscillations in silicon nanowires

We record fine oscillations of 20 to 60 mT superimposed on larger oscillations having periodicity ~ 2 T at temperatures up to 100 K and fields up to 10 T from silicon nanowires. Having confirmed that these features appear from the edge states associated with skipping orbits at nanowire edges and confined pure orbits in the interior of the nanowires we derive electron effective mass of 0.001 me to 0.006 me, carrier lifetime in the range 3 to 19 fs and carrier density that varies from 2x10^11 cm^-2 to 9x10^12 cm^-2. However, at low temperature the observed oscillation amplitude invariant of the field is attributed to not only a strong size confinement and the pinning of orbits by impurities but also Aharanov Bohm (AB) oscillations due to edge-states that propagate quasi-ballistically through the nanowire. The overall oscillation on a linear positive magnetoresistance background can be attributed to temperature-dependent crossover of Shubnikov de Haas oscillations (SdHO) and AB oscillations in silicon nanowires.

cond-mat.mes-hall

Observation of quantum transport features in graphene devices fabricated utilizing a nano-manipulating probe technique

A novel method for fast fabrication of mesoscopic multilayered graphene electronic devices utilizing nanoprobes to exfoliate graphite flakes is developed. The magnetoresistance of these devices exhibit pronounced Shubnikov-de Haas oscillations at magnetic fields above 4 T and at temperatures below 30 K. From the analysis of the SdH oscillations we show that multilayer graphene devices have a carrier density and effective mass (m*= 0.042me - 0.083me) comparable to those of bilayer and trilayer graphene. The quantum lifetime in this multilayered graphene is in the range 22 to 90 fs corresponding to a disorder-broadening of 5 to 15 meV.

cond-mat.mes-hall