arXiv subjects

Davit A. Ghazaryan

Publications and source records attributed to Davit A. Ghazaryan.

10 recordsLinked to original sources

arXiv2026

Towards on-chip nascent all-van-der-Waals polarization optical components for nanoscale photonic applications

The integration of polarization-control elements into nanoscale photonic circuits remains a central challenge for modern on-chip optical technologies, which call for continuous miniaturization. Van der Waals (vdW) crystals provide a versatile platform for the creation of such components owing to their strong optical anisotropy, high-refractive indices and atomically precise heterostructure assembly capabilities. In this work, we demonstrate an approach towards the creation of all-vdW on-chip polarization optical components, exemplified with quarter-wave plates operating in the near-infrared (NIR) spectral region, realized in specifically twisted ReSe2/alpha-MoO3 vdW heterostructures on a Si/SiO2 platform. Here, low-symmetry ReSe2 layer serves as a source of exceptionally high linearly polarized excitonic emission, whereas in-plane birefringent alpha-MoO_3 provides polarization-state conversion. Furthermore, our finite-difference time-domain (FDTD) simulations quantitatively reproduce the experimental observations with high accuracy revealing the critical roles of layer thicknesses, twist-angle, Fabry-Perot interference and emitter distribution effects in the determination of polarization conversion efficiency, which yields up to 95 % degrees of circular polarization (DoCP) for the optimized parametrization. Our findings establish a practical route towards fully integrated all-vdW polarization optical components, providing a foundation for nanoscale photonic architectures based entirely on layered materials.

physics.optics↗

arXiv2026

Probing the temperature dependence of dielectric function of ternary transition metal dichalcogenides: towards thermo-driven ultrathin photonic components

Transition metal dichalcogenides (TMDs), along with their ternary derivatives, have attracted considerable attention mostly due to pronounced excitonic resonances emerging in visible (Vis) and near-infrared (NIR) spectral regions, enabling strong light-matter interaction. Nevertheless, a comprehensive insight of the temperature-dependent optical dispersions for the most of representatives of the family remains yet unrevealed. Here, we report on systematic studies of dielectric permittivity functions of uniaxial ternary MoSSe and WSSe across 430-1000 nm spectral region over a broad temperature window of 80-670 K. We show that the temperature evolution of their dielectric responses is governed by Varshni's formalism in Vis spectral region further affecting their high refractive index properties at the lossless NIR spectral tails. Furthermore, we exploit the measured optical dispersion of ternary WSSe designing ultrathin plano-convex NIR photonic lenses that demonstrate continuous modulation of performance with temperature variation. Our work provides critical insights for the creation of next-generation thermo-driven nanophotonic and optoelectronic devices.

physics.optics↗

arXiv2026

Broadband dielectric permittivity tensor of muscovite for next-generation all van der Waals photonic components

We report a comprehensive determination of the broadband dielectric permittivity tensor of van der Waals (vdW) muscovite also referred to as mica, establishing it as a low-index low-loss platform for ultrathin nanophotonics. Resolving its anisotropic vibrational response and extracting accurate tensor components across broadband ultraviolet (UV) to near-infrared (NIR) spectral region, we show that vdW muscovite exhibits consistently low refractive indices negligible extinction and weak in-plane anisotropy allowing its effective treatment as a uniaxial dielectric in thin-film limits. Leveraging these properties, we design muscovite based vdW heterostructures pairing it MoS2, engineering few-layer distributed Bragg reflectors (DBR) and dichroic beam splitters (DBS) with high efficiency robust optical performance in a broad NIR spectral region achieved with sub-micron thicknesses. Our findings spotlight the high significance of low-index extinctionless vdW crystals, positioning muscovite as a highly perspective atomically flat building block for next-generation, broadband, all-vdW nanophotonic components.

physics.optics↗

arXiv2025

Dielectric permittivity tensor dynamics of in-plane hyperbolic van der Waals MoOCl2 and emergent chiral photonic applications

Van der Waals (vdW) crystals offer unique opportunities for modern nanophotonic applications owing to their intrinsic anisotropic nature. While most of them exhibit uniaxial anisotropy arising from weak out-of-plane vdW interaction, some of their representative families also exhibit an in-plane biaxial anisotropy. Among the latter, outstand vdW oxochlorides with in-plane axes of a different physical character (metallic or dielectric). Here, we present an accurate dynamics of dielectric permittivity tensor components of vdW MoOCl2 in the ultraviolet (UV) to visible (Vis) spectral region partly covering near-infrared (NIR). Addressing its enormously anisotropic optical constants, we focus on another hyperbolicity window of vdW MoOCl2 emerging in the UV spectral region that may potentially unlock rich light-matter interaction effects. Furthermore, we propose an approach towards designing nanoscale handedness preserved Vis light circular polarizers based on twisted helical vdW MoOCl2 heterostructures. Our findings display that vdW MoOCl2 provides a highly promising platform not only for hyperbolic, but also for chiral nanophotonic applications.

physics.optics↗

arXiv2025

Probing the features of electron dispersion by tunneling between slightly twisted bilayer graphene sheets

Tunneling conductance between two bilayer graphene (BLG) sheets separated by 2 nm-thick insulating barrier was measured in two devices with the twist angles between BLGs less than 1°. At small bias voltages, the tunneling occurs with conservation of energy and momentum at the points of intersection between two relatively shifted Fermi circles. Here, we experimentally found and theoretically described signatures of electron-hole asymmetric band structure of BLG: since holes are heavier, the tunneling conductance is enhanced at the hole doping due to the higher density of states. Another key feature of BLG that we explore is gap opening in a vertical electric field with a strong polarization of electron wave function at van Hove singularities near the gap edges. This polarization, by shifting electron wave function in one BLG closer to or father from the other BLG, gives rise to asymmetric tunneling resonances in the conductance around charge neutrality points, which result in strong sensitivity of the tunneling current to minor changes of the gate voltages. The observed phenomena are reproduced by our theoretical model taking into account electrostatics of the dual-gated structure, quantum capacitance effects, and self-consistent gap openings in both BLGs.

cond-mat.mes-hall↗

arXiv2023

Infrared photodetection in graphene-based heterostructures: bolometric and thermoelectric effects at the tunneling barrier

Graphene/hBN/graphene tunnel devices offer promise as sensitive mid-infrared photodetectors but the microscopic origin underlying the photoresponse in them remains elusive. In this work, we investigated the photocurrent generation in graphene/hBN/graphene tunnel structures with localized defect states under mid-IR illumination. We demonstrate that the photocurrent in these devices is proportional to the second derivative of the tunnel current with respect to the bias voltage, peaking during tunneling through the hBN impurity level. We revealed that the origin of the photocurrent generation lies in the change of the tunneling probability upon radiation-induced electron heating in graphene layers, in agreement with the theoretical model that we developed. Finally, we show that at a finite bias voltage, the photocurrent is proportional to the either of the graphene layers heating under the illumination, while at zero bias, it is proportional to the heating difference. Thus, the photocurrent in such devices can be used for accurate measurements of the electronic temperature providing a convenient alternative to Johnson noise thermometry.

cond-mat.mes-hall↗

arXiv2023

Chiral photonic super-crystals based on helical van der Waals homostructures

Chirality is probably the most mysterious among all symmetry transformations. Very readily broken in biological systems, it is practically absent in naturally occurring inorganic materials and is very challenging to create artificially. Chiral optical wavefronts are often used for the identification, control and discrimination of left- and right-handed biological and other molecules. Thus, it is crucially important to create materials capable of chiral interaction with light, which would allow one to assign arbitrary chiral properties to a light field. In this paper, we utilized van der Waals technology to assemble helical homostructures with chiral properties (e. g. circular dichroism). Because of the large range of van der Waals materials available such helical homostructures can be assigned with very flexible optical properties. We demonstrate our approach by creating helical homostructures based on multilayer As$_2$S$_3$, which offers the most pronounced chiral properties even in thin structures due to its strong biaxial optically anisotropy. Our work showcases that the chirality of an electromagnetic system may emerge at an intermediate level between the molecular and the mesoscopic one due to the tailored arrangement of non-chiral layers of van der Waals crystals and without additional patterning.

physics.optics↗

arXiv2023

Exploring van der Waals materials with high anisotropy: geometrical and optical approaches

The emergence of van der Waals (vdW) materials resulted in the discovery of their giant optical, mechanical, and electronic anisotropic properties, immediately enabling countless novel phenomena and applications. Such success inspired an intensive search for the highest possible anisotropic properties among vdW materials. Furthermore, the identification of the most promising among the huge family of vdW materials is a challenging quest requiring innovative approaches. Here, we suggest an easy-to-use method for such a survey based on the crystallographic geometrical perspective of vdW materials followed by their optical characterization. Using our approach, we found As2S3 as a highly anisotropic vdW material. It demonstrates rare giant in-plane optical anisotropy, high refractive index and transparency in the visible range, overcoming the century-long record set by rutile. Given these benefits, As2S3 opens a pathway towards next-generation nanophotonics as demonstrated by an ultrathin true zero-order quarter-waveplate that combines classical and the Fabry-Perot optical phase accumulations. Hence, our approach provides an effective and easy-to-use method to find vdW materials with the utmost anisotropic properties.

physics.optics↗

arXiv2022

High-refractive index and mechanically cleavable non-van der Waals InGaS3

The growing families of two-dimensional crystals derived from naturally occurring van der Waals materials offer an unprecedented platform to investigate elusive physical phenomena and could be of use in a diverse range of devices. Of particular interest are recently reported atomic sheets of non-van der Waals materials, which could allow a better comprehension of the nature of structural bonds and increase the functionality of prospective heterostructures. Here, we study the optostructural properties of ultrathin non-van der Waals InGaS3 sheets produced by standard mechanical cleavage. Our ab initio calculation results suggest an emergence of authentically delicate out-of-plane covalent bonds within its unit cell, and, as a consequence, an artificial generation of layered structure within the material. Those yield to singular layer isolation energies of around 50 meVA-2, which is comparable with the conventional van der Waals material's monolayer isolation energies of 20 - 60 meVA-2. In addition, we provide a comprehensive analysis of the structural, vibrational, and optical properties of the materials presenting that it is a wide bandgap (2.73 eV) semiconductor with a high-refractive index (higher than 2.5) and negligible losses in the visible and infrared spectral ranges. It makes it a perfect candidate for further establishment of visible-range all-dielectric nanophotonics.

cond-mat.mtrl-sci↗

arXiv2021

Twisted monolayer and bilayer graphene for vertical tunneling transistors

We prepare twist-controlled resonant tunneling transistors consisting of monolayer (Gr) and Bernal bilayer (BGr) graphene electrodes separated by a thin layer of hexagonal boron nitride (hBN). The resonant conditions are achieved by closely aligning the crystallographic orientation of the graphene electrodes, which leads to momentum conservation for tunneling electrons at certain bias voltages. Under such conditions, negative differential conductance (NDC) can be achieved. Application of in-plane magnetic field leads to electrons acquiring additional momentum during the tunneling process, which allows control over the resonant conditions.

cond-mat.mes-hall↗