arXiv subjects

Dayu Yan

Publications and source records attributed to Dayu Yan.

29 records · Page 2Linked to original sources

arXiv2020

Magnetic and electronic properties of a topological nodal line semimetal candidate: HoSbTe

We report the experimental and theoretical studies of a magnetic topological nodal line semimetal candidate HoSbTe. Single crystals of HoSbTe are grown from Sb flux, crystallizing in a tetragonal layered structure (space group: P4/nmm, no.129), in which the Ho-Te bilayer is separated by the square-net Sb layer. The magnetization and specific heat present distinct anomalies at 4 K related to an antiferromagnetic (AFM) phase transition. Meanwhile, with applying magnetic field perpendicular and parallel to the crystallographic c axis, an obvious magnetic anisotropy is observed. Electrical resistivity undergoes a bad-metal-like state below 200 K and reveals a plateau at about 8 K followed by a drop due to the AFM transition. In addition, with the first-principle calculations of band structure, we find that HoSbTe is a topological nodal line semimetal or a weak topological insulator with or without taking the spin-orbit coupling into account, providing a platform to investigate the interplay between magnetic and topological fermionic properties.

cond-mat.mtrl-sci↗

arXiv2020

Topologically Nontrivial Interband Plasmons in Type-II Weyl Semimetal MoTe$_2$

In many realistic topological materials, more than one kind of fermions contribute to the electronic bands crossing the Fermi level, leading to various novel phenomena. Here, using momentum-resolved inelastic electron scattering, we investigate the plasmons and their evolution across the phase transition in a type-II Weyl Semimetal MoTe$_2$, in which both Weyl fermions and trivial nonrelativistic fermions contribute to the Fermi surface in the Td phase. One plasmon mode in the 1T' phase at high temperature and two plasmon modes in the topological T$_d$ phase at low temperature are observed. Combining with first-priciples calculations, we show that all the plasmon modes are dominated by the interband correlations between the inverted bands of MoTe$_2$. Especially in the T$_d$ phase, since the electronic bands split due to inversion symmetry breaking and spin-orbit coupling, the plasmon modes manifest the interband correlation between the topological Weyl fermions and the trivial nonrelativistic electrons. Our work emphasizes the significance of the interplay between different kinds of carriers in plasmons of topological materials.

cond-mat.mtrl-sci↗

arXiv2020

Anomalous Hall Effect in Layered Ferrimagnet MnSb2Te4

We report on low-temperature electron transport properties of MnSb2Te4, a candidate of ferrimagnetic Weyl semimetal. Long -range magnetic order is manifested as a nearly square-shaped hysteresis loop in the anomalous Hall resistance, as well as sharp jumps in the magnetoresistance. At temperatures below 4 K, a lnT-type upturn appears in the temperature dependence of longitudinal resistance, which can be attributed to the electron-electron interaction (EEI), since the weak localization can be excluded by the temperature dependence of magnetoresistance. Although the anomalous Hall resistance exhibits a similar lnT-type upturn in the same temperature range, such correction is absent in the anomalous Hall conductivity. Our work demonstrates that MnSb2Te4 microflakes provide an ideal system to test the theory of EEI correction to the anomalous Hall effect.

cond-mat.mes-hall↗

arXiv2020

Topological phase transition in layered magnetic compound MnSb2Te4: Spin-orbit coupling and interlayer coupling dependeces

Based on the first-principles calculations and theoretical analysis, we investigate the electronic structures, topological phase transition (TPT) and topological properties of layered magnetic compound MnSb2Te4. It has the similar crystal and magnetic structure as the magnetic topological insulator MnBi2Te4. We find that when the spin-orbit coupling (SOC) is considered, the band structure of MnSb2Te4 in antiferromagnetic (AFM) state has no band inversion at Γ. This is due to the SOC strength of Sb is less than that of Bi. The band inversion can be realized by increasing the SOC of Sb by 0.3 times, which drives MnSb2Te4 from a trivial AFM insulator to an AFM topological insulator (TI) or axion insulator. Uniaxial compressive strain along the layer stacking direction is another way to control the band inversion. The interlayer distance shorten by 5% is needed to drive the similar TPT. For the ferromagnetic (FM) MnSb2Te4 with experimental crystal structure, it is a normal FM insulator. The band inversion can happen when SOC is enhanced by 0.1 times or the interlayer distance is decreased by more than 1%. Thus, FM MnSb2Te4 can be tuned to be the simplest type-I Weyl semimetal with only one pair of Weyl nodes on the three-fold rotational axis. These two Weyl nodes are projected onto (1-10) surface with one Fermi arc connecting them.

cond-mat.mtrl-sci↗

arXiv2020

Direct Measurement of the Electronic Structure and band gap nature of atomic-layer-thick 2H-MoTe2

The millimeter sized monolayer and bilayer 2H-MoTe2 single crystal samples are prepared by a new mechanical exfoliation method. Based on such high-quality samples, we report the first direct electronic structure study on them, using standard high resolution angle-resolved photoemission spectroscopy (ARPES). A direct band gap of 0.924eV is found at K in the rubidium-doped monolayer MoTe2. Similar valence band alignment is also observed in bilayer MoTe2,supporting an assumption of a analogous direct gap semiconductor on it. Our measurements indicate a rather large band splitting of 212meV at the valence band maximum (VBM) in monolayer MoTe2, and the splitting is systematically enlarged with layer stacking, from monolayer to bilayer and to bulk. Meanwhile, our PBE band calculation on these materials show excellent agreement with ARPES results. Some fundamental electronic parameters are derived from the experimental and calculated electronic structures. Our findings lay a foundation for further application-related study on monolayer and bilayer MoTe2.

cond-mat.mtrl-sci↗

arXiv2019

Robust edge photocurrent response on layered Type II Weyl semimetal WTe2

Photo sensing and energy harvesting based on exotic properties of quantum materials and new operation principles have great potentials to break the fundamental performance limit of conventional photodetectors and solar cells. As topological nontrivial materials, Weyl semimetals have demonstrated novel optoelectronic properties that promise potential applications in photo detection and energy harvesting arising from their gapless linear dispersion near Weyl nodes and Berry field enhanced nonlinear optical effect at the vicinity of Weyl nodes. In this work, we demonstrate robust photocurrent generation from charge separation of photoexctied electron-hole pairs at the edge of Td-WTe2, a type-II Weyl semimetal, due to crystalline-symmetry breaking along certain crystal fracture directions and possibly enhanced by robust fermi-arc type surface states. Using scanning photocurrent microscopy (SPCM) measurements, we further demonstrate that the edge current response is robust over a wide excitation photon energy. We find that this robust feature is highly generic, and shall arise universally in a wide class of quantum materials with similar crystal symmetries. In addition, possible connections between these edge photocurrents and topological properties of Weyl semimetals are explored. The robust and generic edge current response demonstrated in this work provides a new type of charge separation mechanism for photosensing and energy harvesting over broad wavelength range.

cond-mat.mes-hall↗

arXiv2019

Large Magnetoelectric Response in Sr2IrO4/SrTiO3 superlattices with non-equivalent interfaces

Large magnetoelectric response in thin films is highly desired for high-throughput and high-density microelectronic applications. However, the d0 rule in single-phase compounds usually results in a weak interaction between ferroelectric and magnetic orders; the magnetoelectric coupling via elastic resonance in composites restricts their thin-film integration in broadband. Here, we effectuate a concurrence of ferroelectric-like and antiferromagnetic phase transitions in Sr2IrO4/SrTiO3 superlattices by artificial design periodically non-equivalent interfaces, where a maximum magnetoelectric coefficient of ~980 mV cm-1 Oe-1 can be measured. Evidenced by synchrotron X-ray absorption and electron energy loss spectroscopies, a lopsided electron occupation occurs at the interfacial Ti ions. From perturbative calculations and numerical results, a strong coupling of antiferromagnetism and asymmetric electron occupation mediated by spin-orbit interaction leads to a large bulk magnetoelectric response. This atomic tailoring of the quantum order parameters in 3d and 5d oxides provides an alternative pathway towards strong magnetoelectric effects with thin-film integrations.

cond-mat.str-el↗

arXiv2019

Lattice frustration in spin-orbit Mott insulator Sr3Ir2O7 at high pressure

The intertwined charge, spin, orbital, and lattice degrees of freedom could endow 5d compounds with exotic properties. Current interest is focused on electromagnetic interactions in these materials, whereas the important role of lattice geometry remains to be fully recognized. For this sake, we investigate pressure-induced phase transitions in the spin-orbit Mott insulator Sr3Ir2O7 with Raman, electrical resistance, and x-ray diffraction measurements. We reveal an interesting magnetic transition coinciding with a structural transition at 14.4 GPa, but without a concurrent insulator-metal transition. The conventional correlation between magnetic and Mott insulating states is thereby absent. The observed softening of the one-magnon mode can be explained by a reduced tetragonal distortion, while the actual magnetic transition is associated with tilting of the IrO6 octahedra. This work highlights the critical role of lattice frustration in determining the high-pressure phases of Sr3Ir2O7. The ability to control electromagnetic properties via manipulating the crystal structure with pressure promises a new way to explore new quantum states in spin-orbit Mott insulators.

cond-mat.str-el↗

arXiv2019

Direct evidence for charge compensation induced large magnetoresistance in thin WTe2

Since the discovery of extremely large non-saturating magnetoresistance (MR) in WTe2, much effort has been devoted to understanding the underlying mechanism, which is still under debate. Here, we explicitly identify the dominant physical origin of the large non-saturating MR through in-situ tuning of the magneto-transport properties in thin WTe2 film. With an electrostatic doping approach, we observed a non-monotonic gate dependence of the MR. The MR reaches a maximum (10600%) in thin WTe2 film at certain gate voltage where electron and hole concentrations are balanced, indicating that the charge compensation is the dominant mechanism of the observed large MR. Besides, we show that the temperature dependent magnetoresistance exhibits similar tendency with the carrier mobility when the charge compensation is retained, revealing that distinct scattering mechanisms may be at play for the temperature dependence of magneto-transport properties. Our work would be helpful for understanding mechanism of the large MR in other nonmagnetic materials and offers an avenue for achieving large MR in the non-magnetic materials with electron-hole pockets.

cond-mat.mes-hall↗

arXiv2018

Effect of Zn doping on the antiferromagnetism in kagome Cu$_{4-x}$Zn$_x$(OH)$_6$FBr

Barlowite Cu$_4$(OH)$_6$FBr shows three-dimensional (3D) long-range antiferromagnetism, which is fully suppressed in Cu$_3$Zn(OH)$_6$FBr with a kagome quantum spin liquid ground state. Here we report systematic studies on the evolution of magnetism in the Cu$_{4-x}$Zn$_x$(OH)$_{6}$FBr system as a function of $x$ to bridge the two limits of Cu$_4$(OH)$_6$FBr ($x$=0) and Cu$_3$Zn(OH)$_6$FBr ($x$=1). Neutron-diffraction measurements reveal a hexagonal-to-orthorhombic structural change with decreasing temperature in the $x$ = 0 sample. While confirming the 3D antiferromagnetic nature of low-temperature magnetism, the magnetic moments on some Cu$^{2+}$ sites on the kagome planes are found to be vanishingly small, suggesting strong frustration already exists in barlowite. Substitution of interlayer Cu$^{2+}$ with Zn$^{2+}$ with gradually increasing $x$ completely suppresses the bulk magnetic order at around $x$ = 0.4, but leaves a local secondary magnetic order up to $x\sim 0.8$ with a slight decrease in its transition temperature. The high-temperature magnetic susceptibility and specific heat measurements further suggest that the intrinsic magnetic properties of kagome spin liquid planes may already appear from $x>0.3$ samples. Our results reveal that the Cu$_{4-x}$Zn$_x$(OH)$_6$FBr may be the long-thought experimental playground for the systematic investigations of the quantum phase transition from a long-range antiferromagnet to a topologically ordered quantum spin liquid.

cond-mat.str-el↗

arXiv2018

V$_5$S$_8$: a Kondo lattice based on intercalation of van der Waals layered transition metal dichalcogenide

Since the discovery of graphene, a tremendous amount of two dimensional (2D) materials have surfaced. Their electronic properties can usually be well understood without considering correlations between electrons. On the other hand, strong electronic correlations are known to give rise to a variety of exotic properties and new quantum phases, for instance, high temperature superconductivity, heavy fermions and quantum spin liquids. The study of these phenomena has been one of the main focuses of condensed matter physics. There is a strong incentive to introduce electronic correlations into 2D materials. Via intercalating a van der Waals layered compound VS$_2$, we show an emergence of a Kondo lattice, an extensively studied strongly correlated system, by magnetic, specific heat, electrical and thermoelectric transport studies. In particular, an exceptionally large Sommerfeld coefficient, 440 mJ$\cdot$K$^{-2}\cdot$mol$^{-1}$, indicates a strong electron correlation. The obtained Kadowaki-Woods ratio, $2.7\times 10^{-6}$ $μΩ\cdot$cm$\cdot$mol$^2\cdot$K$^2\cdot$mJ$^{-2}$, also supports the strong electron-electron interaction. The temperature dependence of the resistivity and thermopower corroborate the Kondo lattice picture. The intercalated compound is one of a few rare examples of $d$-electron Kondo lattices. We further show that the Kondo physics persists in ultra-thin films. This work thus demonstrates a route to generate strong correlations in 2D materials.

cond-mat.mtrl-sci↗