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Debangsu Roy

Publications and source records attributed to Debangsu Roy.

13 recordsLinked to original sources

Symmetry Breaking by Interfacial Dead Layers: Observation of Forbidden Self-Induced Spin-Orbit Torque in Symmetric Ferromagnets

Conventionally, spin-orbit torques (SOTs) in ferromagnets require heavy-metal layers or engineered structural asymmetry to break inversion symmetry. In this work, we report the observation of robust, self-generated SOTs in a nominally symmetric, heavy-metal-free MgO/NiFe/MgO trilayer - a geometry where such torques are theoretically forbidden. By combining harmonic Hall measurements with SQUID magnetometry and X-ray photoelectron spectroscopy, we identify the symmetry-breaking origin: a 1.8 nm magnetic dead layer at the bottom interface. Crucially, we demonstrate a quantitative agreement between our data and the drift-diffusion theory predicted by Kim and Lee, yielding a theoretically extracted dead-layer thickness (1.2 nm) which matches structural characterization. Furthermore, density-functional calculations confirm that NiFe possesses sufficient intrinsic spin Hall conductivity to support the observed spin currents. These results reframe the parasitic dead layer as a functional spintronic component, establishing a universal, all-ferromagnetic route to SOTs in standard magnetic heterostructures.

cond-mat.mes-hall

Harnessing Native Chromium Oxidation for Giant Orbital Torque and Field-Free Magnetization Switching in NiFe/Cr Bilayers

Orbital currents offer charge-to-spin conversion beyond the efficiency limit of conventional heavy-metal Spin Hall sources. However, harnessing them has so far required either thick orbital-Hall materials or additional heavy-metal conversion layers. Here, we show that the native oxide of chromium, typically regarded as parasitic, transforms a simple NiFe\Cr bilayer into a self-contained dual-channel orbital-current source without the need for any conversion layer. First-principles calculations predict a nearly threefold enhancement of the orbital Hall conductivity upon surface oxygenation, driven by Cr(3d)-O(2p) hybridization. Experimentally, naturally oxidized NiFe\Cr heterostructures exhibit a giant damping-like torque efficiency of $3.9 \times 10^{6}$ $\Omega^{-1}$ m$^{-1}$, exceeding Pt (Ta) by one (two) orders of magnitude. The torque depicts a non-monotonic Cr-thickness dependence which cannot be explained by a conventional model. We have developed a drift-diffusion model with an oxidation-gated interfacial source which quantitatively reproduces the data, revealing that the Cr-CrO$_x$ interface generates orbital currents over an order of magnitude stronger than the bulk orbital Hall channel with an orbital transport length of $\approx 4$ nm. The enhanced torque enables field-free magnetization switching at $1.58 \times 10^{11}$ A m$^{-2}$, outperforming heavy-metal and CuO$_x$ benchmarks. These results establish native oxidation as a scalable strategy for realizing efficient orbital-torque devices.

cond-mat.mes-hall

Observation of Non-linear hall effect in Polycrystalline magnetic multilayes

The Nonlinear Hall effect(NLHE) driven principally by the Berry curvature dipole has been established in non-centrosymmetric vander Waals crystals, topological semimetals, and moir\'e superlattices, but its extension to technologically mature heavy-metal/ferromagnet multilayer platforms remains largely unexplored. Here, we report the observation of a robust NLHE in polycrystalline magnetic multilayers, persisting from 2 K to room temperature. The second-harmonic transverse voltage is independent of both excitation frequency and applied out-of-plane magnetic field, while the vanishingly small third-harmonic response confirms that the observed signal is not dominated by a quantum-metric contribution and instead reflects a genuine second-order electronic response. A scaling analysis of the second-order Hall conductivity against the longitudinal conductivity identifies a dominant, conductivity-independent term establishing the intrinsic berry curvature dipole. Our theoretical analysis, supported by first-principles DFT calculations, further satisfies and corroborates the experimental results. These results establish sputter-deposited polycrystalline thin film as the first engineered magnetic multilayer platform for BCD-driven nonlinear Hall transport, extending the NLHE material landscape beyond van der Waals systems into scalable, industry-compatible thin-film spintronic architectures suitable for high frequency rectifications and nonlinear sensors.

cond-mat.mes-hall

Reconfigurable Spin Logics and High-density Multistate Memory in a Single Spin-orbit Torque Device

Nonvolatile devices based on the spin-orbit torque (SOT) mechanism are highly suitable for in-memory logic operations. The current objective is to enhance the memory density of memory cells while performing logic operations within the same memory unit. Present study demonstrates that integrating SOT with an out-of-plane magnetic field effectively achieves multiple magnetic states in perpendicularly magnetized heterostructures. This study further explores this approach, experimentally demonstrating reconfigurable logic operations within a single SOT device using W/Pt/Co/AlOxheterostructures. Our results show that multistate tuning by SOT integration with out-of-plane magnetic field enables reconfigurable logic operations, including AND, OR, NOR, NAND, and Always ON, within a single device. Additionally, we found that careful selection of input logic operations allows multiple configurations to achieve the same logic function within a single memory device. To enhance multistate memory density, we proposed and experimentally verified a two-step writing process, achieving the highest reported multistate memory density in SOT-based memory devices. These findings highlight the potential of integrating SOT and magnetic field effects to realize high-density, multifunctional in-memory logic devices.

physics.app-ph

Correlation of Magnetic State Configurations in Nanotubes with FMR spectrum

Magnetic nanotubes have garnered immense attention for their potential in high-density magnetic memory, owing to their stable flux closure configuration and fast, reproducible reversal processes. However, characterizing their magnetic configuration through straightforward methodologies remains a challenge in both scope and detail. Here, we elucidate the magnetic state details using Remanence Field Ferromagnetic Resonance Spectroscopy (RFMR) for arrays of electrodeposited nanotubes. Micromagnetic simulations revealed distinct spin configurations while coming from saturation, including the edge vortex, onion, uniform and curling states, with chirality variations depending on the preparation field direction. Dynamic measurements, coupled with RFMR spectra analysis, unveiled multiple FMR modes corresponding to these spin configurations. The evolution of spin configurations under bias fields were studied, indicating nucleation within the curling state. Observations revealed opposite RFMR spectra, denoting opposite magnetic spin configurations after removing the positive and negative saturating fields when the magnetic field was applied along {theta_H=0} and perpendicular {theta_H= 90} to the nanotube axis. We observed a mixture of the non-uniform curling states with the end vortex state (onion-like curling state) at the end of the nanotubes for the theta_H=0(90) and uniform magnetization states in the middle of the nanotubes for the theta_H=0 configuration. Building on RFMR information, frequency-swept FMR absorption spectra obtained at different bias fields allowed the characterization of magnetization states. This picture was supported by micromagnetic simulations. These findings were further substantiated with First Order Reversal Curve measurements (FORC).

cond-mat.mes-hall

Initialization-Free Multistate Memristor: Synergy of Spin-Orbit Torque and Magnetic Fields

Spin-orbit torque (SOT)-based perpendicularly magnetized memory devices with multistate memory have garnered significant interest due to their applicability in low-power in-memory analog computing. However, current methods are hindered by initialization problems such as prolonged writing duration, and limitations on the number of magnetic states. Consequently, a universal method for achieving multistate in PMA-based stacks remains elusive. Here, we propose a general experimental method for achieving multistate without any initialization step in SOT-driven magnetization switching by integrating an external out-of-plane magnetic field. Motivated by macrospin calculations coupled with micromagnetic simulations, which demonstrate the plausibility of magnetization state changes due to out-of-plane field integration, we experimentally verify multistate behavior in Pt/Co/Pt and W/Pt/Co/AlOx stacks. The occurrence of multistate behavior is attributed to intermediate domain states with N\'eel domain walls. We achieve repeatable 18 multistate configurations with a minimal reduction in retentivity through energy barrier measurements, paving the way for efficient analog computing.

cond-mat.mes-hall

Odd symmetry planar Hall effect: A method of detecting current-induced in-plane magnetization switching

Type-x device attracts considerable interest in the field of spintronics due to its robust spin-orbit torque (SOT) induced magnetization switching, and easy deposition technique. However, universally applicable and straightforward detection of type-X magnetization reversal is still elusive, unlike type-Z switching, which employs DC-based anomalous Hall effect measurement. Here, we, demonstrated that the odd planar Hall signal (O-PHV) exhibits an odd symmetry with the application of an external magnetic field which motivates us to develop a reading mechanism for detecting magnetization switching of in-plane magnetized type-X devices. We verified our DC-based reading mechanism in the Pt/Co/NiFe/Pt stack where a thin Co layer is inserted to create dissimilar interfaces about the NiFe layer. Remarkably, the current-induced in-plane fields are found to be significantly large in Pt/Co/NiFe/Pt stack. Further, we successfully employed the O-PHV method to detect the current-induced magnetization switching. The pure DC nature of the writing and reading mechanism of our proposed type-X detection technique through O-PHV makes it the easiest in-plane magnetization detection technique. Moreover, the high repeatability and easy detection of our proposed method will open new avenues toward in-plane SOT switching based memory devices and sensors.

cond-mat.mes-hall

Detection of field-free magnetization switching through thermoelectric effect in Ta/Pt/Co/Pt with significant spin-orbit torque and competing spin currents

Application of sufficient lateral current to a heavy metal (HM) can switch the perpendicular magnetization orientation of adjacent ferromagnetic layer (FM) through spin-orbit torques (SOTs). The choice of the HM and its arrangement plays a major role for the SOT induced magnetization switching in magnetic heterostructures. Here, in asymmetric Pt/Co/Pt heterostructures, anti-damping (AD) SOT prevails. Ta addition to this stack (Ta/Pt/Co/Pt) give rise to several compelling effects viz. competing spin currents (due to opposite spin-Hall angles of adjacent Ta and Pt layers), significant AD-SOT, thermoelectric effects (particularly, anomalous Nernst effect (ANE)), and enhanced perpendicular magnetic anisotropy. For this Ta/Pt/Co/Pt stack, the AD-SOT values are stabilized to that of the Pt/Co/Pt stack, which is significant than what is expected for a stack with competing spin currents. Current-induced field-free magnetization switching was absent in uniformly grown Ta/Pt/Co/Pt stack. It was observed that a thickness gradient is essential to assist the field-free magnetization switching in these heterostructures. Further, the thermoelectric effects are utilized to develop a technique to detect the field-free magnetization switching. This technique detects the second harmonic ANE signal as a reading mechanism. Using ANE symmetry with the applied current, the switching can be detected in a single current sweep which was corroborated to the conventional DC Hall method.

cond-mat.mes-hall

Current-induced nonuniform enhancement of sheet resistance in Ar+ irradiated SrTiO3

The sheet resistance Rs of Ar+ irradiated SrTiO3 in patterns with a length scale of several microns increases significantly below 40 K in connection with driving currents exceeding a certain threshold. The initial lower Rs is recovered upon warming with accelerated recovery around 70 and 160 K. Scanning superconducting quantum interference device microscopy shows local irreversible changes in the spatial distribution of the current with a length scale of several microns. We attribute the observed nonuniform enhancement of Rs to the attraction of the charged single-oxygen and dioxygen vacancies by the crystallographic domain boundaries in SrTiO3. The boundaries, which are nearly ferroelectric below 40 K, are polarized by the local electrical field associated with the driven current and the clustered vacancies which suppress conductivity in their vicinity and yield a noticeable enhancement in the device resistance when the current path width is on the order of the boundary extension. The temperatures of accelerated conductivity recovery are associated with the energy barriers for the diffusion of the two types of vacancies.

cond-mat.supr-con

Spin transport in an insulating ferrimagnetic-antiferromagnetic-ferrimagnetic trilayer as a function of temperature

We present a study of the transport properties of thermally generated spin currents in an insulating ferrimagnetic-antiferromagnetic-ferrimagnetic trilayer over a wide range of temperature. Spin currents generated by the spin Seebeck effect (SSE) in a yttrium iron garnet (YIG) YIG/NiO/YIG trilayer on a gadolinium gallium garnet (GGG) substrate were detected using the inverse spin Hall effect in Pt. By studying samples with different NiO thicknesses, the NiO spin diffusion length was determined to be 4.2 nm at room temperature. Interestingly, below 30 K, the inverse spin Hall signals are associated with the GGG substrate. The field dependence of the signal follows a Brillouin function for a S=7/2 spin ($\mathrm{Gd^{3+}}$) at low temperature. Sharp changes in the SSE signal at low fields are due to switching of the YIG magnetization. A broad peak in the SSE response was observed around 100 K, which we associate with an increase in the spin-diffusion length in YIG. These observations are important in understanding the generation and transport properties of spin currents through magnetic insulators and the role of a paramagnetic substrate in spin current generation.

cond-mat.mes-hall

First harmonic measurements of the spin Seebeck effect

We present measurements of the spin Seebeck effect (SSE) by a technique that combines alternating currents (AC) and direct currents (DC). The method is applied to a ferrimagnetic insulator/heavy metal bilayer, Y$_3$Fe$_5$O$_{12}$(YIG)/Pt. Typically, SSE measurements use an AC current to produce an alternating temperature gradient and measure the voltage generated by the inverse spin-Hall effect in the heavy metal at twice the AC frequency. Here we show that when Joule heating is associated with AC and DC bias currents, the SSE response occurs at the frequency of the AC current drive and can be larger than the second harmonic SSE response. We compare the first and second harmonic responses and show that they are consistent with the SSE. The field dependence of the voltage response is used to characterize the damping-like and field-like torques. This method can be used to explore nonlinear thermoelectric effects and spin dynamics induced by temperature gradients.

cond-mat.mes-hall

Control of magnetization reversal in oriented Strontium Ferrite thin films

Oriented Strontium Ferrite films with the c axis orientation were deposited with varying oxygen partial pressure on Al2O3(0001) substrate using PLD technique. The angle dependent magnetic hysteresis, remanent coercivity and temperature dependent coercivity had been employed to understand the magnetization reversal of these films. It was found that the Strontium Ferrite thin film grown at lower (higher) oxygen partial pressure shows Stoner-Wohlfarth type (Kondorsky like) reversal. The relative importance of pinning and nucleation processes during magnetization reversal is used to explain the type of the magnetization reversal with different oxygen partial pressure during growth.

cond-mat.mtrl-sci

On the evolution of the non exchange spring behaviour to the exchange spring behaviour: A First Order Reversal Curve Analysis

The magnetization behaviour of the soft Cobalt Ferrite-hard Strontium Ferrite nanocomposite is tuned from the non exchange spring nature to the exchange spring nature, by controlling the particle size of the soft Cobalt Ferrite in the Cobalt Ferrite: Strontium Ferrite (1:8) nanocomposite. The relative strength of the interaction governing the magnetization process in the nanocomposites is investigated using Henkel plot and First Order Reversal Curve (FORC) method. The FORC method has been utilized to understand the magnetization reversal behaviour as well as the extent of the irreversible magnetization present in both the nanocomposites having smaller and larger particle size of the Cobalt Ferrite. The magnetization process is primarily controlled by the domain wall movement in the nanocomposites. Using the FORC distribution in the (Ha, Hb) co-ordinate, the onset of the nucleation field, invasion of the domain wall from the soft to the hard phase, domain wall annihilation and the presence of the reversible magnetization with the applied reversal field for both the nanocomposites has been investigated. It has been found that for the composite having lower particle size of the soft phase shows a single switching behaviour corresponding to the coherent reversal of the both soft and hard phases. However, the composite having higher Cobalt Ferrite particle size shows two peak behaviour in the FORC distribution resembling individual switching of the soft and hard phases. The FORC distribution in (Hu, Hc) co-ordinate and the Henkel measurement confirms the dominant exchange interaction in the nanocomposites exhibiting exchange spring behaviour where as the occurrence of both the dipolar and exchange interaction is substantiated for the non exchange coupled nanocomposite.

cond-mat.mtrl-sci