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Debjani Karmakar

Publications and source records attributed to Debjani Karmakar.

At least 19 recordsLinked to original sources

Spin Reorientation Driven Renormalization of Spin-Phonon Coupling in Fe$_4$GeTe$_2$

Quasi-2D van der Waals ferromagnet Fe$_4$GeTe$_2$, featuring the simultaneous presence of high Curie temperature ($T_\mathrm{C}$ $\sim 270$ K) and a spin-reorientation transition at $T_\mathrm{SR}$ $\sim 110$ K, is a rare system where strong interplay of spin dynamics, lattice vibrations, and electronic structure leads to a wide range of interesting phenomena. Here, we investigate the lattice response of exfoliated Fe$_4$GeTe$_2$ nanoflakes using temperature-dependent Raman spectroscopy. Polarization-resolved measurements reveal that, while one Raman mode exhibits a purely out-of-plane character, the rest display mixed symmetry, reflecting interlayer vibrational nonuniformity and symmetry-driven mode degeneracies. Below $T_\mathrm{C}$, phonons harden, and the linewidth narrows, consistent with reduced anharmonicity, while across the spin reorientation transition at $T_\mathrm{SR}$ they display anomalous softening, linewidth broadening, and a peak in lifetime, which are signatures of strengthened spin-phonon coupling. Complementary DFT+DMFT calculations and atomistic spin dynamical simulations reveal temperature-dependent spin excitations whose energies overlap with the Raman-active phonons, providing a natural route for the observed magnon-phonon interaction. Together, these insights establish Fe$_4$GeTe$_2$ as a versatile platform for exploring intertwined spin, lattice, and electronic degrees of freedom, with relevance for dynamic spintronic and magneto-optic functionalities near technologically meaningful temperatures.

cond-mat.mes-hall

Electrostatically Controlled Pyrophototronic Effect Enabled Accident Alert System using a Strain-Polarized WS2 Phototransistor

Event-based dynamic light detection, specifically in low illumination power environments, is a critical requirement in autonomous vehicles. This work reports low optical power photodetection through the dynamic pyrophototronic effect in an ultra-thin 2D WS2 phototransistor. A four-stage pyrophototronic photoresponse has been realized through biaxial strain-polarization of the non-centrosymmetric (5-layer) WS2 channel using a sub-wavelength, nanopatterned hBN gate dielectric. Presence of strain in WS2 has been verified through extensive spectroscopic characterization and that of strain-induced charge polarization through density functional theory calculations as well as piezo force microscopy. The pyrophototronic effect boosts dynamic photoresponsivity (0.7 A/W) and detectivity (1.2x10^(15) Jones cm^(-1)) by up to 8x and enhances the photodetection speed by 3x over the non-patterned (unstrained) phototransistor, demonstrating a path to ameliorating the responsivity-speed trade-off in 2D photodetectors. Analysis of gate voltage, wavelength, and optical power dependence of the pyrophototronic current through measurements and band physics highlights its prominence under low channel population of electrostatically- or optically-induced free carriers. Gate tunability of the pyrophototronic current has been leveraged to design an optical spike-triggered dynamic accident alert system with speed-specific control for self-driving applications under low light conditions.

physics.app-ph

Dynamical electronic correlation and chiral magnetism in van der Waals magnet Fe4GeTe2

Among the quasi-2D van der Waals magnetic systems, Fe4GeTe2 imprints a profound impact due to its near-room temperature ferromagnetic behaviour and the complex magnetothermal phase diagram exhibiting multiple phase transformations, as observed from magnetization and magnetotransport measurements. A complete analysis of these phase transformations in the light of electronic correlation and its impact on the underlying magnetic interactions remain unattended in the existing literature. Using first-principles methodologies, incorporating the dynamical nature of electron correlation, we have analysed the interplay of the direction of magnetization in the easy-plane and easy-axis manner with the underlying crystal symmetry, which reveals the opening of a pseudogap feature beyond the spin-reorientation transition (SRT) temperature. The impact of dynamical correlation on the calculated magnetic circular dichroism and x-ray absorption spectrum of the L-edge of the Fe atoms compared well with the existing experimental observations. The calculated intersite Heisenberg exchange interactions display a complicated nature, depending upon the pairwise interactions among the two inequivalent Fe sites, indicating a RKKY-like behaviour of the magnetic interactions. We noted the existence of significant anisotropic and antisymmetric exchanges interactions, resulting into a chirality in the magnetic behaviour of the system. Subsequent investigation of the dynamical aspects of magnetism in Fe4GeTe2 and the respective magnetothermal phase diagram reveal that the dynamical nature of spins and the decoupling of the magnetic properties for both sites of Fe is crucial to explain all the experimentally observed phase transformations.

cond-mat.other

How to Measure and Model Light-Induced Spin Transfer

Femtosecond laser light can transfer spin angular momentum between magnetic subspecies that exhibit hybridized valence bands within an alloy or compound, and represents the fastest route for manipulating the magnetization of a material. To date, ultrafast spin transfer has predominantly been explained in terms of the initial and final states available for laser excitation. Here, by comparing the measured and calculated dynamics across the entire $M$-edges of two very similar Heusler compounds, $Co_2MnGa$ and $Co_2MnGe$ as well as a sample of elemental Co, we find that simply accounting for the initial and final electron states available for laser excitation cannot alone explain the experimental observations. The influence of spin lifetimes must also be included, due to the shifting of the Fermi level upon replacing Ga with Ge, or the presence of crystalline disorder. This explains why the ordered $L2_1$ phase of $Co_2MnGa$ demonstrates strong laser-induced magnetic signal enhancements across the entire Co-edge, while similar enhancements were not observed in partially disordered $Co_2MnGe$. Although intra-site spin-transfers were expected in the minority channel in pure Co due to the presence of many more available states in the minority channel above the Fermi level, no such signal was observed due to very short few-femtosecond spin lifetimes in a metal. Finally, we identify key regions in the magnetic asymmetry where a transiently enhanced signal could be misinterpreted as a light-induced spin-transfer signature.

cond-mat.mtrl-sci

Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure

Controlling excitons and their transport in two-dimensional (2D) transition metal dichalcogenides (TMDs) heterostructures is central to advancing photonics and electronics on-chip integration. We investigate the controlled generation and manipulation of excitons and their complexes in monolayer (1L) MoSe2-WSe2 lateral heterostructure (LHS), directly grown via water-assisted chemical vapor deposition. Using a field-effect transistor design by incorporating a few-layer graphene back gate, single-layer graphene edge contact and encapsulation with few-layer hexagonal boron nitride, we achieve precise electrical tuning of exciton complexes and their transfer across 1D interfaces. At cryogenic temperatures (4 K), photoluminescence and photocurrent maps reveal the synergistic effect of local electric field and interface phenomena in the modulation of excitons, trions, and free carriers. We observe spatial variations in exciton and trion densities driven by exciton-trion conversion under electrical manipulation. The first-principle density functional theory calculation reveals significant band modification at the lateral interfaces and graphene-TMDs contact region. Furthermore, we demonstrate the versatility of 2D TMDS LHS in hosting and manipulating quantum emitters, achieving precise control over narrow-band emissions through modulating carrier injection and electrical biasing. This work extends the boundary of the present understanding of excitonic behaviour within lateral heterojunctions, highlighting the potential for controlled exciton manipulation across 1D interfaces and paving the way for next-generation electro-optical quantum devices.

cond-mat.mes-hall

Magnetism in AV3Sb5 (A = Cs, Rb, K): Complex Landscape of the Dynamical Magnetic Textures

We have investigated the dynamical magnetic properties of the V-based kagome stibnite compounds by combining the ab-initio calculated magnetic parameters of a spin Hamiltonian like inter-site exchange parameters, magnetocrystalline anisotropy and site projected magnetic moments, with full-fledged simulations of atomistic spin-dynamics. Our calculations reveal that in addition to a ferromagnetic order along the [001] direction, the system hosts a complex landscape of magnetic configurations comprised of commensurate and incommensurate spin-spirals along the [010] direction. The presence of such chiral magnetic textures may be the key to solve the mystery about the origin of the experimentally observed inherent breaking of the C6 rotational symmetry- and the time-reversal symmetry.

cond-mat.mtrl-sci

Magnetism in AV3Sb5 (Cs, Rb, K): Origin and Consequences for the Strongly Correlated Phases

The V-based kagome systems AV3Sb5 (A = Cs, Rb and K) are unique by virtue of the intricate interplay of non-trivial electronic structure, topology and intriguing fermiology, rendering them to be a playground of many mutually dependent exotic phases like charge-order and superconductivity. Despite numerous recent studies, the interconnection of magnetism and other complex collective phenomena in these systems has yet not arrived at any conclusion. Using first-principles tools, we demonstrate that their electronic structures, complex fermiologies and phonon dispersions are strongly influenced by the interplay of dynamic electron correlations, non-trivial spin-polarization and spin-orbit coupling. An investigation of the first-principles-derived inter-site magnetic exchanges with the complementary analysis of q-dependence of the electronic response functions and the electron-phonon coupling indicate that the system conforms as a frustrated spin-cluster, where the occurrence of the charge-order phase is intimately related to the mechanism of electron-phonon coupling, rather than the Fermi-surface nesting.

cond-mat.str-el

1D/2D hybrid Te/Graphene and Te/MoS2: multifaceted broadband photonics and green energy applications

In this letter, we highlight the enhanced functionalization of the electronic and optical properties in the hybrid heterojunction of 1D Tellurene with 2D monolayer of Graphene and MoS2 in both lateral and vertical geometries, having potential applications in the field of photonics and energy harvesting. The structural geometries of the lateral and vertical assemblies are optimized with a comparative and systematic analysis of the energetics of the different positional placement of the 1D system with respect to the hexagonal 2D layer. The 1D/2D coupling of the electronic structure in this unique assembly enables the realization of the four different types of heterojunctions, viz. type I, type II, Z-scheme and Schottky type, with the band-alignments being entirely dependent upon the stacking geometry of 1D Tellurene with respect to the 2D monolayer. With the static and time-dependent first-principles calculations, we indicate the potential applications of these hybrid systems in broadband photo detection and absorption, covering the full range of Infra-red to visible (IR-Vis) spectrum and in green energy harvesting with an effective separation and migration of photo-generated charge carriers.

cond-mat.mtrl-sci

Substrate Dependent Synergistic Many-Body Effects in Atomically Thin Two Dimensional WS$_2$

Mott transition has been realized in atomically thin monolayer (ML) of two dimensional semiconductors (WS$_2$) via optically excited carriers above a critical carrier density through many body interactions. The above nonlinear optical transition occurs when excited electron hole pairs in ML WS2 continuum heavily interact with each other followed by transformation into a collective electron hole plasma phase (EHP), by losing their identity as individual quasiparticles. This is manifested by the alluring red-shift-blue-shift crossover (RBC) phenomena of the excitonic peaks in the emission spectra, resulting from the synergistic attraction-repulsion processes at the Mott-transition point. A systematic investigation of many-body effects is reported on ML WS$_2$, while considering the modulated dielectric screening of three different substrates, viz., silicon dioxide, sapphire, and gold. Substrate doping effects on ML WS$_2$ are discussed using the Raman fingerprints and PL spectral weight, which are further corroborated using theoretical DFT calculations. Further the substrate dependent excitonic Bohr radius of ML WS$_2$ is extracted via modelling the emission energy shift with Lennard-Jones potential. The variation of Mott point as well as excitonic Bohr radius is explained via substrate induced dielectric screening effect for both the dielectric substrates, which is however absent in ML WS$_2$ on Au. Our study therefore reveals diverse many-body ramifications in 2D semiconductors and offers decisive outlooks on selecting the impeccable substrate materials for innovative device engineering.

cond-mat.mtrl-sci

Two-dimensional ReS2: Solution to the Unresolved Queries on Its Structure and Inter-layer Coupling Leading to Potential Optical Applications

Over the last few years, ReS2 has generated a myriad of unattended queries regarding its structure, the concomitant thickness dependent electronic properties and apparently contrasting experimental optical response. In this work, with elaborate first-principles investigations, using density functional theory (DFT) and time-dependent DFT (TDDFT), we identify the structure of ReS2, which is capable of reproducing and analyzing the layer-dependent optical response. The theoretical results are further validated by an in-depth structural, chemical, optical and optoelectronic analysis of the large-area ReS2 thin films, grown by chemical vapor deposition (CVD) process. Micro-Raman (MR), X-ray photoelectron spectroscopy (XPS), cross-sectional transmission electron microscopy (TEM) and energy-dispersive X-ray analysis (EDAX) have enabled the optimization of the uniform growth of the CVD films. The correlation between the layer-dependent optical and electronic properties of the excited states was established by static photoluminescence (PL) and transient absorption (TA) measurements. Sulfur vacancy-induced localized mid-gap states render a significantly long life-time of the excitons in these films. The ionic gel top-gated photo-detectors, fabricated from the as-prepared CVD films, exhibit a large photo-response of ~ 5 A/W and a remarkable detectivity of ~ 1011 Jones. The outcome of the present work will be useful to promote the application of vertically grown large-area films in the field of optics and opto-electronics.

cond-mat.mtrl-sci

Combinatorial Large-area MoS2/Anatase-TiO2 interface: A Pathway to Emergent Optical and Opto-electronic Functionalities

Interface of transition metal dichalcogenide (TMDC) and high-k dielectric transition metal oxides (TMO) had triggerred umpteen discourses due to the indubitable impact of TMO in reducing the contact resistances and restraining the Fermi-level pinning for the metal-TMDC contacts. In the present work, we focus on the unresolved tumults of large-area TMDC/TMO interfaces, grown by adopting different techniques. Here, on a pulsed laser deposited (PLD) MoS2 thin film, a layer of TiO2 is grown by using both atomic layer deposition (ALD) and PLD. These two different techniques emanate TiO2 layers with different crystalline properties, thicknesses and interfacial morphologies, subsequently influencing the electronic and optical properties of the interfaces. In addition, they manifest a boost in the extent of p-type doping with increasing thickness of TiO2, as emerged after analyzing the core-level shifts of the X-ray photoelectron spectra (XPS). Density functional analysis of the MoS2/Anatase-TiO2 interfaces, for pristine and in presence of a wide range of interfacial defects, could explain the interdependence of doping and the terminating atomic-surface of TiO2 on MoS2. The optical properties of the interface, encompassing the photoluminescence, transient absorption and z-scan two-photon absorption indicate the presence of defect-induced localized mid-gap levels in MoS2/TiO2 (PLD), resulting quenched exciton signals. On the contrary, the relatively defect-free interface in MoS2/TiO2 (ALD) demonstrates a clear presence of both A and B excitons of MoS2. From the investigation of optical properties, we indicate that MoS2/TiO2 (PLD) interface may act as a promising saturable absorber. Moreover, MoS2/TiO2 (PLD) interface had resulted a better photo-transport. A potential application of MoS2/TiO2 (PLD) is demonstrated by the fabrication of a p-type photo-transistor with the ionic-gel top gate.

cond-mat.mtrl-sci

Intriguing electronic and optical prospects of FCC bimetallic two-dimensional heterostructures: epsilon near-zero behaviour in UV-vis range

Higher superconducting critical temperature and large-area epsilon-near-zero interfaces are two long-standing goals of Condensed Matter Physics and Optics. Motivated by the recent advancements of experimental interests on metallic nanostructures, we have theoretically investigated some selected bimetallic FCC combinations starting from large-area interface to embedded and doped two-dimensional (2D) nanostructures. Using different first-principles techniques, encompassing density functional theory (DFT), time-dependent DFT (TDDFT), phonon and DFT-coupled quantum transport, we propose the prospects of some selective bimetallic nanostructures like Au/Ag and Pt/Pd to exhibit exotic electronic phenomena. For 2D doped and embedded nanostructures of these systems, non-trivial band-structure and Fermi-surface topology may be emblematic to the presence of instabilities like charge density waves. We specifically highlight the optical attributes extracted from the TDDFT calculations for these systems, where interfacial morphology induced band-localization leads to near-zero behavior of both real and imaginary parts of the dynamical dielectric response is observed in the ultra-violet to visible (UV-vis) optical range. Low-energy intra-band plasmonic oscillations present for individual metallic surfaces are completely suppressed for embedded and doped nanostructures. Phonon-dispersion of the model systems indicates the presence of soft phonons and dynamical instabilities. Quantum transport calculations on simplest possible device made out of these bimetallic systems reveals generation of highly transmitting pockets over the cross-sectional area for some selected device geometry. We envisage that, if observed experimentally, such systems may lead to many fascinating physics and applications in many diverse fields ranging from condensed matter physics to optics or even more.

cond-mat.supr-con

Broken Inversion Symmetry and Interface-induced Spin-polarization for metal-Weyl semimetal stacked interfaces

Weyl semimetal TaAs, a congenial host to the massless Weyl fermions, spontaneously lacks the time-reversal and the inversion symmetry and thus effectuates topologically stable Weyl nodes, resembling magnetic monopoles in momentum space. Former experimental analysis had revealed that the near-zero spin-polarization of bulk TaAs experiences a boost in presence of point-contacts of non-magnetic metals along with the associated phenomena of tip-induced superconductivity, providing the impetus to study the large-area stacked interfaces of TaAs with Noble metals like Au and Ag. First-principles calculations on these interfacial systems have manifested an increment of the interface-induced spin-polarization and contact-induced transport spin-polarization. In contrast to the single interface, for stacked system, the broken inversion symmetry of the system introduces a z-directional band-dispersion resulting in an energetically separated series of Weyl cones. The Weyl cones for TaAs/Ag and TaAs/Au stacked interfaces are observed to be of type-I and type-II nature respectively. Thus, the current study demonstrates the designing of two different types of spin-polarized Weyl systems from non-magnetic metal and type I Weyl components.

cond-mat.mes-hall

Intricate modulation of interlayer coupling at GO/MoSe2 interface: application in time-dependent optics and device transport

In GO/MoSe2 semiconductor heterostructure, we have demonstrated a subtle control on the doping dynamics by modulating interlayer coupling through the combination of strain-reducing relative rotation of the constituting layers and variation of ligand type and concentration. By first-principles calculations incorporating spin-orbital coupling, we have investigated the impact of variable interlayer coupling in introducing non-collinear magnetic behaviour in the heterostructure. The outcome of varying carrier type and their respective concentrations are investigated by static as well as time dependent density functional calculations, which indicates presence of optical anisotropy and time-dependent optical phenomena like exciton quenching and band-gap renormalization. Performance of such heterostructures as channel material in devices with top and edge metal contacts is analyzed. Our self-consistent quantum transport calculations have evinced that the nature of interface-induced variation in doping is extrapolated for devices only in the case of top contacts. The edge contact, although exhibits a better transmission, are inefficient for sensing the ligand-induced doping modulation introduced via vertical inter-layer charge transfer.

cond-mat.mtrl-sci

Designing hybrid graphene oxide- gold nanoparticles for nonlinear optical response: Experiment and theory

Nonlinear optical absorption of light by materials are weak due to its perturbative nature, although a strong nonlinear response is of crucial importance to applications in optical limiting and switching. Here we demonstrate experimentally and theoretically an extremely efficient scheme of excited state absorption by charge transfer between donor and acceptor materials as the new method to enhance the nonlinear absorption by orders of magnitude. With this idea, we have demonstrated strong excited state absorption (ESA) in reduced graphene oxide that otherwise shows increased transparency at high fluence and enhancement of ESA by one orders of magnitude in graphene oxide by attaching gold nanoparticles (AuNP) in the tandem configuration that acts as an efficient charge transfer pair when excited at the plasmonic wavelength. To explain the unprecedented enhancement, we have developed a five-level rate equation model based on the charge transfer between the two materials and numerically simulated the results. To understand the correlation of interfacial charge-transfer with the concentration and type of the functional ligands attached to the graphene oxide sheet, we have investigated the AuNP-graphene oxide interface with various possible ligand configurations from first-principles calculations. By using the strong ESA of our hybrid materials, we have fabricated liquid cell-based high-performance optical limiters with important device parameters better than that of the benchmark optical limiters.

cond-mat.mes-hall

Nature of carrier injection in metal/2D semiconductor interface and its implications to the limits of contact resistance

Monolayers of transition metal dichalcogenides (TMDCs) exhibit excellent electronic and optical properties. However, the performance of these two-dimensional (2D) devices are often limited by the large resistance offered by the metal contact interface. Till date, the carrier injection mechanism from metal to 2D TMDC layers remains unclear, with widely varying reports of Schottky barrier height (SBH) and contact resistance (Rc), particularly in the monolayer limit. In this work, we use a combination of theory and experiments in Au and Ni contacted monolayer MoS2 device to conclude the following points: (i) the carriers are injected at the source contact through a cascade of two potential barriers - the barrier heights being determined by the degree of interaction between the metal and the TMDC layer; (ii) the conventional Richardson equation becomes invalid due to the multi-dimensional nature of the injection barriers, and using Bardeen-Tersoff theory, we derive the appropriate form of the Richardson equation that describes such composite barrier; (iii) we propose a novel transfer length method (TLM) based SBH extraction methodology, to reliably extract SBH by eliminating any confounding effect of temperature dependent channel resistance variation; (iv) we derive the Landauer limit of the contact resistance achievable in such devices. A comparison of the limits with the experimentally achieved contact resistance reveals plenty of room for technological improvements.

cond-mat.mes-hall

Effect of size and aspect ratio on structural parameters and evidence of shape transition in zinc oxide nanostructures

Dependence of structural parameters on the size of nanoparticles is a topic of general interest where the effect of shape is often neglected. We report a comprehensive study on size dependent structural parameters of ZnO nanostructures (NS) having a wide range of aspect ratios (length/diameter). It reveals that with increase in size, ZnO NS undergo a shape transition from spherical to rod like morphology that induces sudden change in internal parameter (u) which represents relative position of two hexagonal close-packed sublattices. The change in u introduces concomitant changes in anion-cation (Zn-O) bond lengths as well as bond angles and thereby bears a linear dependence with the aspect ratio (AR). Further, the unit cell volume and microstrain decrease with increase in particle size and show a drastic reduction when flat crystal faces begin to appear at the spherical surface (AR~1.3). The significant change in structural parameters associated with the shape transition arises due to surface dipole induced electrostatic relaxation that may be further influenced by interaction with the ambient gases as evidenced from the Extended X-ray Absorption Fine Structure (EXAFS) measurement. The present study addresses the underlying reasons of shape induced change in structural and electronic properties of ZnO NS.

cond-mat.mtrl-sci

Doping-induced spin-manipulation in complex trimer system Ca$_{3}$Cu$_{3}$(PO$_{4}$)$_{4}$: A First Principles Study

Spin-manipulated doping with magnetic (Ni) and non-magnetic (Mg) dopants constitutes the experimental attempts to obtain a singlet ground state system from the linear chain Heisenberg antiferromagnetic Cu-based $d^{9}$ spin-1/2 trimer compound Ca$_{3}$Cu$_{3}$(PO$_{4}$)$_{4}$ with doublet ground state. The present study is a first-principles based investigation of the effects of such doping on the spin-exchange mechanism and electronic structure of the parent compound. Site-selective doping with zero-spin dopants like Mg is proved to be more efficient than an integral spin dopant Ni in obtaining a spin-gap system with singlet ground state, as also observed in the experimental studies. Doping induced dimerized state is found to be the lowest in ground-state energy. Calculated spin exchange values along various possible paths resemble nicely with earlier experimental results.

cond-mat.mtrl-sci