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Deep Singha Roy

Publications and source records attributed to Deep Singha Roy.

6 recordsLinked to original sources

Emergence of a hidden-order phase well below the charge density wave transition in a topological Weyl semimetal (TaSe$_4$)$_2$I

The emergence of a charge density wave (CDW) in a Weyl semimetal -- a correlated topological phase, is exceptionally rare in condensed matter systems. In this context, the quasi-one-dimensional type-III Weyl semimetal (TaSe$_4$)$_2$I undergoes a CDW transition at $T_{\mathrm{CDW}} \approx 263$~K, providing an exceptional platform to investigate correlated topological CDW states. Here, we uncover an additional hidden-order phase transition at $T^* \sim 100$ K, well below the CDW onset, using low-frequency resistance noise spectroscopy, electrical transport, and thermoelectric measurements. This transition is characterized by a sharp enhancement in the noise exponent ($α$) and variance of resistance fluctuations. Analysis of higher-order statistics of resistance fluctuations reveals the correlated dynamics underlying the transition. A pronounced anomaly in the Seebeck coefficient near $T^*$ further suggests a Fermi surface reconstruction. First-principles calculations reveal a structural distortion from the high-symmetry $I422$ phase to a low-symmetry $C2$ phase, via an intermediate $I4$ symmetry. This leads to renormalization of the electronic structure near the Fermi level and opening of a bandgap in the hidden-order phase. These findings demonstrate a previously unidentified correlated phase transition in the topological CDW-Weyl semimetal (TaSe$_4$)$_2$I, enriching the phase diagram of this material and establishing it as an ideal platform for studying intertwined electronic and structural orders.

cond-mat.str-el

Signatures of emergent surface states across a displacive topological phase transition in Bi$_4$I$_4$

Topological phase transitions involving crystalline symmetry breaking provide a fertile ground to explore the interplay between symmetry, topology, and emergent quantum phenomena. Recently discovered quasi-one-dimensional topological material, Bi$_4$I$_4$, has been predicted to host topologically non-trivial gapless surfaces at high temperature, which undergo a finite temperature phase transition to a low temperature gapped phase. Here we present experimental signatures of this room temperature phase transition from a high-temperature $β$-phase with a surface state to a gapped $α$-phase hosting hinge states. Using real-space current mapping and resistance fluctuation spectroscopy, we identify signatures of a displacive topological phase transition mediated by a first-order thermodynamic structural change. Near the emergence of $β$-phase, we observe pronounced telegraphic noise, indicating fluctuating phase domains with topological surface states. The spatially resolved current map reveals electron transport via the gapless surface states in the $β$-phase, which vanishes upon transitioning to the $α$-phase with localized conduction channels (or hinge modes). Our experimental results, supported by first principles estimates and effective theory of a topological displacive phase transition, establish Bi$_4$I$_4$ as a candidate material showing intricate interplay of classical thermodynamic phase transitions with topological quantum phenomena.

cond-mat.str-el

Exceptionally Slow, Long Range, and Non-Gaussian Critical Fluctuations Dominate the Charge Density Wave Transition

$(TaSe_4)_2I$ is a well-studied quasi-one-dimensional compound long-known to have a charge-density wave (CDW) transition around 263 K. We argue that the critical fluctuations of the pinned CDW order parameter near the transition can be inferred from the resistance noise on account of their coupling to the dissipative normal carriers. Remarkably, the critical fluctuations of the CDW order parameter are slow enough to survive the thermodynamic limit and dominate the low-frequency resistance noise. The noise variance and relaxation time show rapid growth (critical opalescence and critical slowing down) within a temperature window of $ \varepsilon \approx \pm 0.1$, where $\varepsilon$ is the reduced temperature. This is very wide but consistent with the Ginzburg criterion. We further show that this resistance noise can be quantitatively used to extract the associated critical exponents. Below $|\varepsilon | \lesssim 0.02$, we observe a crossover from mean-field to a fluctuation-dominated regime with the critical exponents taking anomalously low values. The distribution of fluctuations in the critical transition region is skewed and strongly non-Gaussian. This non-Gaussianity is interpreted as the breakdown of the validity of the central limit theorem as the diverging coherence volume becomes comparable to the macroscopic sample size. The large magnitude critical fluctuations observed over an extended temperature range, as well as the crossover from the mean-field to the fluctuation-dominated regime highlight the role of the quasi-one dimensional character in controlling the phase transition.

cond-mat.str-el

Raman signatures of lattice dynamics across inversion symmetry breaking phase transition in quasi-1D compound, (TaSe$_4$)$_3$I

Structural phase transition can occur due to complex mechanisms other than simple dynamical instability, especially when the parent and daughter structure is of low dimension. This article reports such an inversion symmetry-breaking structural phase transition in a quasi-1D compound (TaSe$_4$)$_3$I at T$_S\sim$ 141~K studied by Raman spectroscopy. Our investigation of collective lattice dynamics reveals three additional Raman active modes in the low-temperature non-centrosymmetric structure. Two vibrational modes become Raman active due to the absence of an inversion center, while the third mode is a soft phonon mode resulting from the vibration of Ta atoms along the \{-Ta-Ta-\} chains. Furthermore, the most intense Raman mode display Fano-shaped asymmetry, inferred as the signature of strong electron-phonon coupling. The group theory and symmetry analysis of Raman spectra confirm the displacive-first-order nature of the structural transition. Therefore, our results establish (TaSe$_4)_3$I as a model system with broken inversion symmetry and strong electron-phonon coupling in the quasi-1D regime.

cond-mat.str-el

Enhanced coercivity and emergence of spin cluster glass state in 2D ferromagnetic material Fe3GeTe2

Two-dimensional (2D) van der Waals (vdW) magnetic materials with high coercivity and high $T_\text{C}$ are desired for spintronics and memory storage applications. Fe$_3$GeTe$_2$ (F3GT) is one such 2D vdW ferromagnet with a reasonably high $T_\text{C}$, but with a very low coercive field, $H_\text{c}$ ($\lesssim$100~Oe). Some of the common techniques of enhancing $H_\text{c}$ are by introducing pinning centers, defects, stress, doping, etc. They involve the risk of undesirable alteration of other important magnetic properties. Here we propose a very easy, robust, and highly effective method of phase engineering by altering the sample growth conditions to greatly enhance the intrinsic coercivity (7-10 times) of the sample, without compromising its fundamental magnetic properties ($T_\text{C}\simeq$210K). The phase-engineered sample (F3GT-2) comprises of parent F3GT phase with a small percentage of randomly embedded clusters of a coplanar FeTe (FT) phase. The FT phase serves as both mosaic pinning centers between grains of F3GT above its antiferromagnetic transition temperature ($T_\text{C1}\sim$70~K) and also as anti-phase domains below $T_\text{C1}$. As a result, the grain boundary disorder and metastable nature are greatly augmented, leading to highly enhanced coercivity, cluster spin glass, and meta-magnetic behavior. The enhanced coercivity ($\simeq$1~kOe) makes F3GT-2 much more useful for memory storage applications and is likely to elucidate a new route to tune useful magnetic properties. Moreover, this method is much more convenient than hetero-structure and other cumbersome techniques.

cond-mat.str-el

Nonlinear coherent light-matter interaction in 2D MoSe$_2$ nanoflakes for all-optical switching and logic applications

We report a strong nonlinear optical response of 2D MoSe$_2$ nanoflakes (NFs) through spatial self-phase modulation (SSPM) and cross-phase modulation (XPM) induced by nonlocal coherent light-matter interactions. The coherent interaction of light and MoSe$_2$ NFs creates the SSPM of laser beams, forming concentric diffraction rings. The nonlinear refractive index ($n_2$) and the third-order broadband nonlinear optical susceptibility ($χ^{(3)}$) of MoSe$_2$ NFs are determined from the self diffraction pattern at different exciting wavelengths of 405, 532, and 671 nm with varying the laser intensity. The evolution and deformation of diffraction ring patterns are observed and analyzed by the `wind-chime' model and thermal effect. By taking advantage of the reverse saturated absorption of 2D SnS$_2$ NFs compared to MoSe$_2$, an all-optical diode has been designed with MoSe$_2$/SnS$_2$ hybrid structure to demonstrate the nonreciprocal light propagation. Also a few other optical devices based on MoSe$_2$ and other semiconducting materials such as Bi$_2$Se$_3$, CuPc, and graphene have been investigated. The all-optical logic gates and all-optical information conversion have been demonstrated through the XPM technique using two laser beams. The proposed optical scheme based on MoSe$_2$ NFs has been demonstrated as a potential candidate for all-optical nonlinear photonic devices such as all-optical diodes and all-optical switches.

physics.optics