arXiv subjects

Deepnarayan Biswas

Publications and source records attributed to Deepnarayan Biswas.

27 records · Page 2Linked to original sources

arXiv2019

Electronic structure studies on single crystalline Nd2PdSi3, an exotic Nd-based intermetallic: Evidence for Nd 4f hybridization

In the series R2PdSi3, Nd2PdSi3 is an anomalous compound in the sense that it exhibits ferromagnetic order unlike other members in this family. The magnetic ordering temperature is also unusually high compared to the expected value for a Nd-based system, assuming 4f localization. Here, we have studied the electronic structure of single crystalline Nd2PdSi3 employing high resolution photoemission spectroscopy and ab initio band structure calculations. Theoretical results obtained for the effective electron correlation strength of 6 eV corroborate well with the experimental valence band spectra. While there is significant Pd 4d-Nd 4f hybridization, the states near the Fermi level are found to be dominated by hybridized Nd 4f-Si 3p states. Nd 3d core level spectrum exhibits multiple features manifesting strong final state effects due to electron correlation, charge transfer and collective excitations. These results serve as one of the rare demonstrations of hybridization of Nd 4$f$ states with the conduction electrons possibly responsible for the exoticity of this compound.

cond-mat.str-el↗

arXiv2019

Local excitons in silicon induced by SiGe quantum huts

Conversion of Si to a direct bandgap semiconductor for optoelectronic application is a great challenge for many decades. It is proposed that embedment of suitable sized quantum dots into silicon matrix may be exploited to convert silicon to a direct bandgap semiconductor. The other bottleneck to this outstanding issue is the identification of local excitons, a signature of direct bandgap property and their comportment within the dots that can be utilized in engineering optoelectronic devices, quantum communications, etc. We studied the core level spectra of Si/Ge quantum huts embedded Si employing high resolution photoemission spectroscopy. Inverted quantum huts (IQHs) of Ge (13.3nm x 6.6nm) were grown on a Si buffer layer deposited on Si(001) surface using molecular beam epitaxy method and the photoemission experiments were carried out at different locations of the IQH structures exposed via controlled sputtering and annealing processes. We discover distinct features in the Ge 3$d$ core level spectra at the lower binging energy side of the bulk 3$d$ peak in contrast to the scenario of core level satellites often observed due to photoemission final state effects. The energy of these features are found to be sensitive to the location of the IQH structure probed revealing different core hole screening by the excitons located at different parts of IQHs. These results reveal local character of the excitons in the IQHs necessary for type I photoluminescence and establish core level spectroscopy as a direct probe of local excitons. These finding are expected to help amalgamation of microelectronics and solid state photonics important for optoelectronic applications.

cond-mat.mes-hall↗

arXiv2019

Anisotropic two-dimensional screening at the surface of black phosphorus

Screening in reduced dimensions has strong consequences on the electronic properties in van der Waals semiconductors, impacting the quasiparticle band gap and exciton binding energy. Screening in these materials is typically treated isotropically, yet black phosphorus exhibits in-plane electronic anisotropy seen in its effective mass, carrier mobility, excitonic wavefunctions, and plasmonic dispersion. Here, we use the adsorption of individual potassium atoms on the surface of black phosphorus to vary the near-surface doping over a wide range, while simultaneously probing the dielectric screening via the ordering of the adsorbed atoms. Using scanning tunneling microscopy, we visualize the role of strongly anisotropic screening which leads to the formation of potassium chains with a well-defined orientation and spacing. We quantify the mean interaction potential utilizing statistical methods and find that the dimensionality and anisotropy of the screening is consistent with the presence of a band-bending induced confinement potential near the surface. We corroborate the observed behavior with coverage-dependent studies of the electronic structure with angle-resolved photoemission.

cond-mat.mes-hall↗

arXiv2019

Transient Hot Electron Dynamics in Single-Layer TaS$_2$

Using time- and angle-resolved photoemission spectroscopy, we study the response of metallic single layer TaS$_2$ in the 1H structural modification to the generation of excited carriers by a femtosecond laser pulse. A complex interplay of band structure modifications and electronic temperature increase is observed and analyzed by direct fits of model spectral functions to the two-dimensional (energy and $k$-dependent) photoemission data. Upon excitation, the partially occupied valence band is found to shift to higher binding energies by up to 150 meV, accompanied by electronic temperatures exceeding 3000~K. These observations are explained by a combination of temperature-induced shifts of the chemical potential, as well as temperature-induced changes in static screening. Both contributions are evaluated in a semi-empirical tight-binding model. The shift resulting from a change in the chemical potential is found to be dominant.

cond-mat.str-el↗

arXiv2016

Spin and Valley Control of Free Carriers in Single-Layer WS$_2$

The semiconducting single-layer transition metal dichalcogenides have been identified as ideal materials for accessing and manipulating spin- and valley-quantum numbers due to a set of favorable optical selection rules in these materials. Here, we apply time- and angle-resolved photoemission spectroscopy to directly probe optically excited free carriers in the electronic band structure of a high quality single layer of WS$_2$. We observe that the optically generated free hole density in a single valley can be increased by a factor of 2 using a circularly polarized optical excitation. Moreover, we find that by varying the photon energy of the excitation we can tune the free carrier density in a given spin-split state around the valence band maximum of the material. The control of the photon energy and polarization of the excitation thus permits us to selectively excite free electron-hole pairs with a given spin and within a single valley.

cond-mat.mes-hall↗

arXiv2015

Identification of the surface features in the electronic structure of Cr

We studied the electronic structure of high quality Cr(110) films grown on W(110) surface employing photoemission spectroscopy. Experiments on the differently aged samples revealed distinct signatures of the surface and bulk features in the electronic structure. It is observed that the adsorbed oxygens form covalent bonds with the surface Cr atoms at higher temperatures, while they remain almost unreacted at low temperatures. In addition to the spin density wave transition induced band folding across the bulk Neel temperature, we discover a weakly dispersing sharp feature emerging near the Fermi level at low temperatures presumably due to correlation induced effects.

cond-mat.mtrl-sci↗

arXiv2015

Anomalies in the electronic structure of Bi(2)Se(3)

We studied the electronic structure Bi(2)Se(3) employing density functional theory. The calculations show that the Dirac states primarily consists of the states at the interface of surface and sub-surface quintuple layers and the emergence of the Dirac states depends on the surface terminations in sharp contrast to their surface character expected for such systems. This manifests the complexity of real materials and the realization of topological order in real materials as an outstanding problem. We discover that the surface character of the Dirac states can be achieved by adsorption of oxygen on Bi-terminated surface due to the change in covalency by the relatively more electronegative oxygens.

cond-mat.mtrl-sci↗

arXiv2014

Aging of the surface of Bi(2)Se(3)

We study the electronic structure of Bi(2)Se(3) employing high resolution photoemission spectroscopy and discover the dependence of the behavior of Dirac particles on surface terminations. The Dirac cone apex appears at different energies and exhibits contrasting shift on Bi and Se terminated surface with complex time dependence emerging from subtle adsorbed oxygen-surface atom interactions. These results uncover the surface states behavior of real systems possessing topologically ordered surface.

cond-mat.mtrl-sci↗

arXiv2013

Interplay of electron correlation and covalency in FeTe(0.6)Se(0.4)

We investigate the electronic structure of FeTe(0.6)Se(0.4) employing high resolution photoemission spectroscopy and ab initio band structure calculations. Fe 2p core level and the valence band spectra exhibit signature of strong electron correlation in the electronic structure. The electronic states near the Fermi level reduces in intensity with the decrease in temperature in conformity with the insulating transport observed near 300 K. The observation of an insulator to metal transition around 150 K in the transport properties may be related to the spectral lineshape change in the vicinity of the Fermi level observed in this study. The spectral features near Fermi level exhibit significant p orbital character due to the correlation induced Fe d spectral weight transfer. The experimental spectra reveal dominant temperature dependence of the spectral functions possessing large p-character. These results demonstrate significant renormalization of the character of the conduction electrons due to electron correlation and emphasizes the importance of ligand states in the superconductivity of these materials.

cond-mat.str-el↗