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Dehe Zhang

Publications and source records attributed to Dehe Zhang.

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Nonvolatile Control of Nonlinear Hall and Circular Photogalvanic Effects via Berry Curvature Dipole in Multiferroic Monolayer CrNBr2

The Berry curvature dipole induced by symmetry breaking play a pivotal role in electronic transport properties and nonlinear responses, such as the nonlinear Hall effect and circular photogalvanic effect. The study of the Berry curvature dipole, often explored in time-reversal symmetric systems, but it should not be limited to such materials. Here, we predicted that the ferroelectricity in monolayer CrNBr2 produces Berry curvature dipole, leading to the nonlinear Hall effect and circular photogalvanic current. The linear anomalous Hall effect and circularly polarized optical absorption, governed by spin-orbit coupling, are independent of ferroelectric polarization and exhibit extremely small conductance. In contrast, multiferroic monolayer CrNBr2 achieves a large nonlinear Hall conductivity and circular photogalvanic current, despite its suppression at high temperatures from phonon scattering. The coupling between the ferroelectric polarization and the Berry curvature dipoles allows for nonvolatile switching of these effects, presenting substantial promise for nanoelectronic and optoelectronic devices.

cond-mat.mtrl-sci

Large Enhancement of Properties in Strained Lead-free Multiferroic Solid Solutions with Strong Deviation from Vegard's Law

Efforts to combine the advantages of multiple systems to enhance functionlities through solid solution design present a great challenge due to the constraint imposed by the classical Vegard law. Here, we successfully navigate this trade off by leveraging the synergistic effect of chemical doping and strain engineering in solid solution system of BiFeO3 BaTiO3. Unlike bulks, a significant deviation from the Vegard law accompanying with enhanced multiferroism is observed in the strained solid solution epitaxial films, where we achieve a pronounced tetragonality, enhanced saturated magnetization, substantial polarization, high ferroelectric Curie temperature, all while maintaining impressively low leakage current. These characteristics surpass the properties of their parent BiFeO3 and BaTiO3 films. Moreover, the superior ferroelectricity has never been reported in corresponding bulks. These findings underscore the potential of strained BiFeO3 BaTiO3 films as lead-free, room-temperature multiferroics.

cond-mat.mtrl-sci