arXiv subjects

Delang Liang

Publications and source records attributed to Delang Liang.

4 recordsLinked to original sources

arXiv2026

Ultrafast Non-Volatile Weyl LuminoMem for Mid-Infrared In-Memory Computing

Integrated optoelectronic systems strive to combine the logic/memory density of electronics with the bandwidth of photonics, but monolithic realization is impeded by the inefficient electronic-to-photonic interface. Current architectures rely on separate readout circuitry and modulators, creating bottlenecks in energy and latency, while existing direct transduction methods often compromise on switching speed or non-volatility. Here, we report an ultrafast, non-volatile optoelectronic memory, named LuminoMem, that integrates electrical storage and mid-infrared light emission in a single device. The device utilizes a floating-gate architecture, in which the Weyl semiconductor tellurium serves simultaneously as a charge-trapping storage layer and an emissive medium. This design enables nanosecond-scale electrical programming of non-volatile photoluminescence at 3.4 um, allowing direct optical access to stored states without external modulation. We demonstrate 4-bit (16-level) optical storage capacity and validate the device's performance through neural network simulations that achieve high accuracy on the Fashion-MNIST dataset. By effectively bridging the gap between electronic storage and mid-infrared photonics, the demonstrated mid-infrared LuminoMem provides a hardware foundation for promoting current computation efficiency and potential intelligent platforms that co-integrate computing, memory, and sensing capabilities.

cond-mat.mtrl-sci↗

arXiv2026

Gate-Tunable Mid-Infrared Electroluminescence from Te/MoS2 p-n Heterojunctions

Mid-infrared (MIR) emitters are critical components in advanced photonic systems, driving progress in fields such as chemical sensing, environmental monitoring, medical diagnostics, thermal imaging and free-space communications. Conventional MIR emitters based on III-V heterostructures rely on complex epitaxial growth on rigid lattice-matched substrates and suffer from limited integration compatibility with CMOS or flexible platforms. The recent development of novel MIR emitters based on two-dimensional (2D) materials such as black phosphorus (BP) is more suitable for on-chip applications but faces challenges related to stability and emission efficiency. Based on the recently discovered highly efficient photoluminescence of Te, we demonstrate a gate-tunable midinfrared light-emitting diode based on a van der Waals heterojunction formed by multilayer transition metal dichalcogenide (TMD) MoS2 and tellurium (Te). The device emits polarized electroluminescence (EL) centered at 3.5 $\mu$m under forward bias at 25 K, and the EL persists up to 80 K with reduced intensity. Gate control of the MoS2 Fermi level modulates the band alignment and injection efficiency, enabling dynamic tuning of the EL intensity. The emission remains spectrally stable under varying bias and gating, indicating robust band-edge recombination. These results establish the Te/TMD heterostructure as a promising platform for integrated polarized mid-infrared optoelectronics.

cond-mat.mes-hall↗

arXiv2025

Versatile tunable optical injection of chiral polarized Weyl fermions in a magnetic Weyl semimetal Co3Sn2S2

Precise probe and control of various quantum degrees of freedom in novel quantum matter are central to understanding fundamental quantum physics and hold promise for innovative routes to encode and process information. Chirality is one such degree of freedom that has recently attracted intense research interest, especially for Weyl fermions in topological Weyl semimetals. The coupling of chiral degrees of freedom through light-matter interactions and the versatile control of these couplings through external fields can lead to precise quantum control of Weyl fermions. In this work, we demonstrate the observation of light chirality-dependent photocurrent in the mid-infrared regime. Excitation wavelength-dependent measurements reveal that the photocurrent originates from the injection of chiral polarized Weyl fermions by chiral polarized mid-infrared photons. The optical process that generates unbalanced chiral polarized Weyl fermions is determined to be a third-order nonlinear photocurrent process. Compared with nonmagnetic Weyl semimetals, such coupling is versatilely tunable in magnetic Weyl semimetals with the magnetization direction and external electric field in addition to the chirality of light. Our results are not only directly applicable to tunable circular-polarization-sensitive photodetection in the mid-infrared regime, but also pave the way toward functional quantum devices that utilize the chiral quantum degrees of freedom of Weyl fermions.

cond-mat.mes-hall↗

arXiv2025

High-speed readout for direct light orbital angular momentum photodetector via photoelastic modulation

Recent progress in direct photodetection of light orbital angular momentum (OAM) based on the orbital photogalvanic effect (OPGE) provides an effective way for on-chip direct electric readout of orbital angular momentum, as well as large-scale integration focal-plane array devices. However, the recognition of OAM order from photocurrent response requires the extraction of circular polarization-dependent response. To date, the operation speed of such detector is currently at the minute level and is limited by slow mechanical polarization modulation and low OAM recognition capability. In this work, we demonstrate that the operation speed can be greatly improved via electrical polarization modulation strategy with photoelasitc modulator accompanied by phase-locked readout approach with lock-in amplifier. We demonstrate an operation speed of up to 1 kHz with this new technology in the mid-infrared region (4 {\mu}m) on an OAM detector using multilayer graphene (MLG) as photosensitive material. In principle, with new modulation and readout scheme, we can potentially increase the operation speed to 50.14 kHz with a PEM that operates at a state-of-the-art speed. Our work paves the way toward high-speed operation of direct OAM detection devices based on OPGE effect and pushes such technology to a more practical stage for focal plane array applications.

physics.optics↗