Searcharxiv⌕ Search

arXiv subjects

Delphine Néel

Publications and source records attributed to Delphine Néel.

2 recordsLinked to original sources

Mode-locking in a semiconductor photonic bandgap laser

Multimode lasers have a very complex dynamics, as expected when oscillators are nonlinearly coupled. Order emerges when the modes lock together; in this case the coherent superposition of the modes results into a periodic train of pulses or a nearly constant power output with a linearly chirped frequency, for instance. The first is promoted by a saturable absorber, or an equivalent physical mechanism, while the latter is connected to more subtle conditions, such as the fast dynamics of the gain. Here we consider the case of a multimode semiconductor laser with gain provided by quantum wells but without any saturable absorber. The cavity is designed to have a photonic bandgap and very low dispersion. We show, first in theory, that modes can lock together and generate a variety of waveforms which are not trains of pulses nor chirped continuous power waves. Mode locking is observed in experiments on a III-V/Silicon hybrid laser with the cavity made of a suitably tapered grating. Moreover, we find that the mode-locking beatnote is strongly dependent on the injected current: we reach more than 1 GHz modulation amplitude of the beatnote at a modulation frequency of 50 kHz. The behaviour of the laser is critically determined by the dispersion, which can be controlled by the photonic crystal structure. By scaling up the number of interacting modes, this laser source may offer an effective and extremely flexible way of generating waveforms à la carte.

physics.optics↗

High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots

We compare the quality factor values of the whispery gallery modes of microdisks incorporating GaN quantum dots (QDs) grown on AlN and AlGaN barriers by performing room temperature photoluminescence (PL) spectroscopy. The PL measurements show a large number of high Q factor (Q) resonant modes on the whole spectrum which allows us to identify the different radial mode families and to compare them with simulations. We report a considerable improvement of the Q factor which reflect the etching quality and the relatively low cavity loss by inserting QDs into the cavity. GaN/AlN QDs based microdisks show very high Q values (Q > 7000) whereas the Q factor is only up to 2000 in microdisks embedding QDs grown on AlGaN barrier layer. We attribute this difference to the lower absorption below bandgap for AlN barrier layers at the energies of our experimental investigation.

cond-mat.mtrl-sci↗