arXiv subjects

Demid Kirilenko

Publications and source records attributed to Demid Kirilenko.

3 recordsLinked to original sources

arXiv2026

Telecom C-band single-photon sources with a semiconductor-dielectric microresonator

Secure communications with quantum key distribution over fiber-optic links is one of the few recognized applications of quantum physics at the level of individual quanta -- single C-band photons. Currently, the widely used sources of such photons are highly attenuated laser pulses, featured by a low probability of single photon occurrence. Here, we present an efficient source with an InAs/GaAs quantum dot on a metamorphic buffer layer inside a micropillar-shaped microcavity. The key innovation is the use of different semiconductor and dielectric materials to form the lower (GaAs/AlGaAs) and upper (Si/SiO$_2$) Bragg reflectors. Compatibility of these materials in a monolithic source is achieved by depositing a small amount of Si/SiO$_2$ pairs on an incomplete micropillar made from a coherent heterostructure grown by molecular beam epitaxy. This design enables resonant excitation with $\pi$-pulses and generation of polarized photons with a record-breaking end-to-end efficiency of 11%.

cond-mat.mes-hall↗

arXiv2024

Formation of Thin GaAs Buffer Layers on Silicon for Light-Emitting Devices

This paper presents the experimental results on research of growth processes of GaAs layers on silicon substrates by molecular beam epitaxy. The formation of buffer Si layer in a single growth process has been found to significantly improve the crystalline quality of the GaAs layers formed on its surface, as well as to prevent the formation of anti-phase domains both on offcutted towards the [110] direction and on singular Si(100) substrates. It has been demonstrated that the use of cyclic thermal annealing at temperatures 350-660{\deg}C in the flow of arsenic atoms makes it possible to reduce the number of threading dislocations and increase the smoothness of the GaAs layers surface. At the same time, the article considers possible mechanisms that lead to an improvement in the quality of the surface layers of GaAs. It is shown that the thus obtained GaAs layers of submicron thickness on the singular Si(100) substrates have a mean square value of surface roughness 1.9 nm. The principal possibility of using thin GaAs layers on silicon as templates for forming on them light-emitting semiconductor heterostructures with active area based on self-organizing InAs quantum dots and InGaAs quantum well is presented. They are shown to exhibit photoluminescence at 1.2 um at room temperature.

physics.app-ph↗

arXiv2023

Allotropic Ga$_2$Se$_3$/GaSe nanostructures grown by van der Waals epitaxy: Narrow exciton lines and single-photon emission

The ability to emit narrow exciton lines, preferably with a clearly defined polarization, is one of the key conditions for the use of nanostructures based on III-VI monochalcogenides and other layered crystals in quantum technology to create non-classical light. Currently, the main method of their formation is exfoliation followed by strain and defect engineering. A factor limiting the use of epitaxy is the presence of different phases in the grown films. In this work, we show that control over their formation makes it possible to create structures with the desired properties. We propose Ga$_2$Se$_3$/GaSe nanostructures by van der Waals epitaxy with a high VI/III flux ratio as a source of narrow exciton lines. Actually, these nanostructures are a combination of allotropes: GaSe and Ga$_2$Se$_3$, consisting of the same atoms in different arrangements. The energy position of the narrow lines is determined by the quantum confinement in Ga$_2$Se$_3$ inclusions of different sizes in the GaSe matrix, similar to quantum dots, and their linear polarization is due to the ordering of Ga vacancies in a certain crystalline direction in Ga$_2$Se$_3$. Such nanostructures exhibit single-photon emission with second-order correlation function $g^{(2)}(0)\sim$0.1 at 10 K that makes them promising for quantum technologies.

cond-mat.mes-hall↗