arXiv subjects

Deming Zhang

Publications and source records attributed to Deming Zhang.

6 recordsLinked to original sources

arXiv2024

Automatic Extraction and Compensation of P-Bit Device Variations in Large Array Utilizing Boltzmann Machine Training

Probabilistic Bit (P-Bit) device serves as the core hardware for implementing Ising computation. However, the severe intrinsic variations of stochastic P-Bit devices hinder the large-scale expansion of the P-Bit array, significantly limiting the practical usage of Ising computation. In this work, a behavioral model which attributes P-Bit variations to two parameters {\alpha} and {\Delta}V is proposed. Then the weight compensation method is introduced, which can mitigate {\alpha} and {\Delta}V of P-Bits device variations by rederiving the weight matrix, enabling them to compute as ideal identical PBits without the need for weights retraining. Accurately extracting the {\alpha} and {\Delta}V simultaneously from a large P-Bit array which is prerequisite for the weight compensation method is a crucial and challenging task. To solve this obstacle, we present the novel automatic variation extraction algorithm which can extract device variations of each P-Bit in a large array based on Boltzmann machine learning. In order for the accurate extraction of variations from an extendable P-Bit array, an Ising Hamiltonian based on 3D ferromagnetic model is constructed, achieving precise and scalable array variation extraction. The proposed Automatic Extraction and Compensation algorithm is utilized to solve both 16-city traveling salesman problem(TSP) and 21-bit integer factorization on a large P-Bit array with variation, demonstrating its accuracy, transferability, and scalability.

cond-mat.mes-hall↗

arXiv2022

Time Division Multiplexing Ising Computer Using Single Tunable True Random Number Generator Based on Spin Torque Nano-Oscillator

Ising computer is a powerful computation scheme to deal with NP-hard optimization problems that cannot be efficiently addressed by conventional computers. A robust probabilistic bit (P-Bit) which is realized by a hardware entity fluctuating in time between -1 and 1 plays a key role in the success of Ising computer. Spintronics technology, such as stochastic nanomagnet, is recently proposed as a good platform for the hardware emulation of P-Bit. Here, we report, for the first time, a Time Division Multiplexing (TDM) Ising computer using single tunable true random number generator which is comprised of a Spin Torque Nano-Oscillator (STNO). First, the intrinsic frequency fluctuation of the STNO is utilized to design a simple digital true random number generator (TRNG). The true random number generator is further evolved into a tunable random number generator to act as a P-Bit. Second, in order to accomplish combinational optimization with our proposed P-Bit under Ising model, a novel incremental coupling rule is proposed. With such coupling rule between P-Bit array, high fidelity NOT and XOR logic gate is demonstrated. Third, it is proposed that our digital TRNG can be simply reused acting as a P-Bit array by time division multiplexing. The whole Ising computer can be implemented by one single STNO, and integer factorization of as high as 87% accuracy rate is achieved.

cond-mat.mes-hall↗

arXiv2019

Frequency Modulation and Voltage Locking of the Voltage Controlled Spin Oscillators (VCSOs)

The oscillating frequency of typical Spin Torque Nano Oscillators (STNOs) can be modulated by injected DC current or bias magnetic field. And phase locking of STNOs to an external Radio Frequency (RF) signal can be imposed by AC current or RF bias magnetic field. However, in this study, we have proposed a Voltage Controlled Spin Oscillators (VCSOs) by introducing Voltage Controlled Magnetic Anisotropy (VCMA) effect. The oscillating frequency of VCSOs can be modulated by VCMA voltage as well as injected DC current. Furthermore, we have shown a novel locking mechanism caused by AC VCMA voltage. Both the frequency modulation and voltage locking mechanism are analyzed theoretically by Nonlinear Auto-oscillator theory and verified by numerical simulation. At last, we proposed that by utilizing negative capacitance material to enhance VCMA effect, the locking range for voltage locking can be expanded thus may lead to easy mutual synchronization of multiple VCSOs.

cond-mat.mes-hall↗

arXiv2018

Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches

Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory (MRAM) and resistive random access memory (RRAM) suffer from limitations of low tunnel magnetoresistance (TMR), low access speed or finite endurance. NVMs with synergetic advantages are still highly desired for future computer architectures. Here, we report a heterogeneous memristive device composed of a magnetic tunnel junction (MTJ) nanopillar surrounded by resistive silicon switches, named resistively enhanced MTJ (Re-MTJ), that may be utilized for novel memristive memories, enabling new functionalities that are inaccessible for conventional NVMs. The Re-MTJ device features a high ON/OFF ratio of >1000% and multilevel resistance behaviour by combining magnetic switching together with resistive switching mechanisms. The magnetic switching originates from the MTJ, while the resistive switching is induced by a point-switching filament process that is related to the mobile oxygen ions. Microscopic evidence of silicon aggregated as nanocrystals along the edges of the nanopillars verifies the synergetic mechanism of the heterogeneous memristive device. This device may provide new possibilities for advanced memristive memory and computing architectures, e.g., in-memory computing and neuromorphics.

physics.app-ph↗

arXiv2016

Amplicification of Voltage Controlled Magnetic Anisotropy Effect with Negative Capacitance

The high current density required by Magnetic Tunneling Junction (MTJ) switching driven by Spin Transfer Torque (STT) effect leads to large power consumption and severe reliability issues therefore hinder the timetable for STT Magnetic Random Access Memory (STT-MRAM) to mass market. By utilizing Voltage Controlled Magnetic Anisotropy (VCMA) effect, the MTJ can be switched by voltage effect and is postulated to achieve ultra-low power (fJ). However, the VCMA coefficient measured in experiments is far too small for MTJ dimension below 100 nm. Here in this work, a novel approach for the amplification of VCMA effect which borrow ideas from negative capacitance is proposed. The feasibility of the proposal is proved by physical simulation and in-depth analysis.

cond-mat.mes-hall↗

arXiv2016

Far-field head-media optical interaction in heat-assisted magnetic recording

We have used a plane-wave expansion method to theoretically study the far-field head-media optical interaction in HAMR. For the ASTC media stack specifically, we notice the outstanding sensitivity related to interlayer's optical thickness for media reflection and magnetic layer's light absorption. With 10-nm interlayer thickness change, the recording layer absorption can be changed by more than 25%. The 2-D results are found to correlate well with full 3-D model and magnetic recording tests on flyable disc with different interlayer thickness.

physics.optics↗