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Denglu Hou

Publications and source records attributed to Denglu Hou.

6 recordsLinked to original sources

Scalar Spin Chiral Order via Bond Selectivity in Strained Collinear Ferrimagnets

Scalar spin chirality (SSC) drives a series of topological transports in noncoplanar magnets. However, the ordering temperature of magnet hosting intrinsic SSC order is typically below 100 K. Current approaches to achieve near room temperature SSC order largely rely on external fields or chemical doping in noncollinear magnets. A significant challenge persists in generating and controlling SSC order in high temperature collinear magnets. Here, using the collinear ferrimagnet Mn4N with Neel temperature ~740 K as a platform, we demonstrate that isotropic strain acts as a clean and continuous tuning parameter to induce long range SSC order by first principles calculations. As strain increases from to, the magnetic ground state evolves continuously from a collinear to a noncoplanar configuration, activating the SSC order and enhancing its magnitude from 0 to ~2.32. Our quantitative orbital-resolved bonding analysis reveals that strain selectively suppresses the bond between Mn 3d orbitals and N 2p orbitals, driving dual prerequisites for the SSC order. Specifically, the decreased covalent spin-pairing activates Mn3c moments within the plane, simultaneously the suppressed N-mediated ferromagnetic superexchange interaction shifts the balance of the nearest-neighbor Mn3c sites toward antiferromagnetic exchange interaction. Our findings establish a powerful strain mediated route to construct the SSC order in high temperature collinear magnets.

cond-mat.mtrl-sci

Giant Full-Space Anomalous Hall Effect Induced by Non-Coplanar Spin State in Mn-Rich Mn3Sn

Antiferromagnets are promising candidates for next-generation spintronic devices owing to their negligible stray fields and ultrafast spin dynamics. The noncollinear antiferromagnet $\mathrm{Mn}_{3}\mathrm{Sn}$ exhibits a large anomalous Hall effect (AHE). However, its specific noncollinear spin configuration leads to the forbiddance of the anomalous Hall conductivity from the (0001) basal plane, $\sigma_{(0001)}$, limiting practical applications. Here, using first-principles density functional theory, we demonstrate that Mn enrichment in $\mathrm{Mn}_{3}\mathrm{Sn}$ drives a magnetic transition from the coplanar $120^\circ$ spin configuration to a non-coplanar state with moments tilted toward the $c$-axis. This transition is primarily mediated by four-spin ring exchange interaction in the local triangular lattice, which breaks the time-reversal symmetry and generates a giant intrinsic anomalous Hall conductivity over the full three-dimensional space in $\mathrm{Mn}_{3}\mathrm{Sn}$. We predict that $\sigma_{(0001)}$ reaches as high as $\sim\!-468~\Omega^{-1}\cdot\mathrm{cm}^{-1}$, and an enhanced $\sigma_{(01\bar{1}0)}$ of $\sim\!-229~\Omega^{-1}\cdot\mathrm{cm}^{-1}$ is expected in light Mn self-doping of $\mathrm{Mn}_{3}\mathrm{Sn}$ ($\mathrm{Mn}_{3.125}\mathrm{Sn}_{0.875}$). Unlike previously reported mechanisms relying on external magnetic fields or strain, our approach exploits intrinsic compositional tuning to stabilize a non-coplanar magnetic ground state for realizing a strong full-space AHE in antiferromagnets, providing another viable pathway toward high-performance, low-power spintronic devices.

cond-mat.mtrl-sci

Flexible manipulation of chiral spin state by chemical bond in Mn triangular lattice magnet

This study investigates the influence of chemical bonds on the magnetic structure of materials, a less explored area compared to their effect on crystal stability. By analyzing the strength and directionality of chemical bonds using the electron localization function (ELF) and charge density difference (CDD) methods, we examine their impact on magnetic exchange interactions and magnetocrystalline anisotropy under specific interstitial conditions in Mn4X compounds. Our findings indicate that these properties can effectively modulate the magnetic ground state. This work not only elucidates the varied magnetism observed in Mn triangular lattice magnets but also proposes an approach for engineering chiral spin states through chemical bonding manipulation.

cond-mat.mtrl-sci

Extrinsic suppression of anomalous Hall effect in Fe-rich kagome magnet Fe3Sn

In Fe-based kagome magnets, Fe3Sn has been predicted to have the largest intrinsic anomalous Hall conductivity (AHC) and the highest Curie temperature TC = 743 K. However, the current experimental results show that the total AHC is much lower than the predicted value due to the strong extrinsic contribution. To suppress the extrinsic contribution and thus enhance the intrinsic contribution, we increased the Fe content in the stoichiometric Fe3Sn. We found that the extrinsic contribution is greatly suppressed, and the intrinsic contribution is dominant and is close to the theoretically predicted value of 555 S/cm over the whole temperature range. Based on the formula of the skew scattering, we analyzed the reason why the skew scattering is suppressed and found that the spin-orbit coupling strength provided by the impurity center is the key. The spin-orbit coupling strength provided by Fe as an impurity center in this study is much smaller than that of Sn as an impurity center in previous studies. Therefore, the AHC in Fe-rich Fe3Sn obeys the unified theory, while the AHC in Sn-rich Fe3Sn deviates from the unified theory. Our study provides a promising solution for the regulation of the extrinsic contribution to the anomalous Hall effect in kagome magnets.

cond-mat.mtrl-sci

Large topological Hall effect arising from spin reorientation in kagome magnet Fe3Ge

Materials systems with spin chirality can provide ultra-high-density, ultra-fast, and ultralow-power information carriers for digital transformation. These material systems include magnetic skyrmions, chiral domain walls, spin reorientation,and so on. The topological Hall effect (THE) has been identified as the most convenient and effective tool for detecting the presence of spin chirality in these systems. The research on the THE that may arise from spin reorientation and specifically in Fe3Ge with spin reorientation remains an unexplored area, so we study the THE in Fe3Ge Conduct systematic research. X-Ray Diffraction (XRD) results indicate that our Fe3Ge ribbon sample has a D019 structure. First-principles calculations and magnetic and electrical testing confirm spin reorientation in the Fe3Ge ribbon sample at 350 K.The Hall resistivity test results are consistent with our expectations, indicating the presence of the THE in the Fe3Ge ribbon sample. The topological Hall resistivity reaches a maximum value of 0.69 mΩ cm at 400 K. For the first time, a detailed experimental study of the THE in Fe3Ge with spin reorientation has been conducted, introducing a new member to the family of THE.

cond-mat.mtrl-sci

Absence of Metallic Behavior in Epitaxial NiCo2O4 Thin Films: Role of Microstructural Disorder

Despite the low resistivity (~ 1 mohm cm), the metallic electrical transport has not been commonly observed in the inverse spinel NiCo2O4, except in certain epitaxial thin films. Previous studies have stressed the effect of valence mixing and degree of spinel inversion on the electric conduction of NiCo2O4 films. In this work, we have studied the effect of microstructure by comparing the NiCo2O4 epitaxial films grown on MgAl2O4 (111) and on Al2O3 (0001) substrates. Although the optimal growth condition and the magnetic properties are similar for the NiCo2O4/MgAl2O4 and the NiCo2O4/Al2O3, they show metallic and semiconducting electrical transport respectively. Despite similar temperature and field dependence of magnetization, the NiCo2O4/Al2O3 show much larger magnetoresistance at low temperature. Post-growth annealing decreases the resistivity of NiCo2O4/Al2O3, but the annealed films are still semiconducting. The correlation between the structural correlation length and the resistivity suggests that the microstructural disorder, generated by the dramatic mismatch between the NiCo2O4 and Al2O3 crystal structures, may be the origin of the absence of the metallic electrical transport in NiCo2O4. These results reveal microstructural disorder as another key factor in controlling the electrical transport of NiCo2O4, with potentially large magnetoresistance for spintronics application.

cond-mat.mtrl-sci