arXiv subjects

Deniz Çakır

Publications and source records attributed to Deniz Çakır.

6 recordsLinked to original sources

arXiv2021

Comprehensive Study of Lithium Adsorptionand Diffusion on Janus Mo/WXY (X, Y= S,Se, Te) using First Principles and MachineLearning Approaches

The structural asymmetry of two-dimensional (2D) Janus transition metal dichalcogenides (TMDs) produces internal dipole moments that result in interesting electronic properties. These properties differ from the regular (symmetric) TMD structures that the Janus structures are derived from. In this study, we, at first, examine adsorption and diffusion of a single Li atom on regular MX2and Janus MXY (M = Mo, W; XY =S, Se, Te) TMD structures at various concentrations using first principles calculations within density functional theory. To gain more physical insight and prepare for future investigations of regular TMD and Janus materials, we applied a supervised machine learning (ML) model that uses cluster-wise linear regression to predict the adsorption energies of Li on top of 2D TMDs. We developed a universal representation with few descriptors that take into account the intrinsic dipole moment and the electronic structure of regular and Janus 2D layers, the side where the adsorption takes place and the concentration dependence of adatom doping. This representation can easily be generalized to be used for other impurities and 2D layer combinations, including alloys as well. At last, we focus on analyzing these structures as possible anodes in battery applications. We conducted Li diffusion, open-circuit-voltage and storage capacity simulations. We report that Lithium atoms are found to easily migrate between transition metal (Mo, W) top sites for each considered case, and in these respects many of the examined Janus materials are comparable or superior to graphene and to regular TMDs. The results imply that theexamined Janus structures should perform well as electrodes in Li-ion batteries.

cond-mat.mtrl-sci↗

arXiv2020

First-principles discovery of stable two-dimensional materials with high-level piezoelectric response

The rational design of two-dimensional piezoelectric materials has recently garnered great interest due to their increasing use in technological applications, including sensor technology, actuating devices, energy harvesting, and medical applications. Several materials possessing high piezoelectric response have been reported so far, but a high-throughput first-principles approach to estimate the piezoelectric potential of layered materials has not been performed yet. In this study, we systematically investigated the piezoelectric ($e_{11}$, $d_{11}$) and elastic (C$_{11}$ and C$_{12}$) properties of 128 thermodynamically stable two-dimensional (2D) semiconductor materials by employing first-principle methods. Our high-throughput approach demonstrates that the materials containing Group-\textrm{V} elements produce significantly high piezoelectric strain constants, $d_{11}$ $>$ 40 pmV$^{-1}$, and 49 of the materials considered have the $e_{11}$ coefficient higher than MoS$_{2}$ insomuch as BrSSb has one of the largest $d_{11}$ with a value of 373.0 pmV$^{-1}$. Moreover, we established a simple empirical model in order to estimate the $d_{11}$ coefficients by utilizing the relative ionic motion in the unit cell and the polarizability of the individual elements in the compounds.

cond-mat.mes-hall↗

arXiv2019

Silicene Like Domains on IrSi3 Crystallites

Recently, silicene, the graphene equivalent of silicon, has attracted a lot of attention due to its compatibility with Si-based electronics. So far, silicene has been epitaxy grown on various crystalline surfaces such as Ag(110), Ag(111), Ir(111), ZrB2(0001) and Au(110) substrates. Here, we present a new method to grow silicene via high temperature surface reconstruction of hexagonal IrSi3 nanocrystals. The h-IrSi3 nanocrystals are formed by annealing thin Ir layers on Si(111) surface. A detailed analysis of the STM images shows the formation of silicene like domains on the surface of some of the IrSi3 crystallites. We studied both morphology and electronic properties of these domains by using both scanning tunneling microscopy/spectroscopy and first-principles calculation methods.

cond-mat.mtrl-sci↗

arXiv2014

Tuning of the electronic and optical properties of single layer black phosphorus by strain

Using first principles calculations we showed that the electronic and optical properties of single layer black phosphorus (BP) depend strongly on the applied strain. Due to the strong anisotropic atomic structure of BP, its electronic conductivity and optical response are sensitive to the magnitude and the orientation of the applied strain. We found that the inclusion of many body effects is essential for the correct description of the electronic properties of monolayer BP; for example while the electronic gap of strainless BP is found to be 0.90 eV by using semilocal functionals, it becomes 2.31 eV when many-body effects are taken into account within the G0W0 scheme. Applied tensile strain was shown to significantly enhances electron transport along zigzag direction of BP. Furthermore, biaxial strain is able to tune the optical band gap of monolayer BP from 0.38 eV (at -8% strain) to 2.07 eV (at 5.5%). The exciton binding energy is also sensitive to the magnitude of the applied strain. It is found to be 0.40 eV for compressive biaxial strain of -8%, and it becomes 0.83 eV for tensile strain of 4%. Our calculations demonstrate that the optical response of BP can be significantly tuned using strain engineering which appears as a promising way to design novel photovoltaic devices that capture a broad range of solar spectrum.

cond-mat.mes-hall↗

arXiv2014

Magnetoresistance in multilayer fullerene spin valves: a first-principles study

Carbon-based molecular semiconductors are explored for application in spintronics because their small spin-orbit coupling promises long spin life times. We calculate the electronic transport from first principles through spin valves comprising bi- and tri-layers of the fullerene molecules C60 and C70, sandwiched between two Fe electrodes. The spin polarization of the current, and the magnetoresistance depend sensitively on the interactions at the interfaces between the molecules and the metal surfaces. They are much less affected by the thickness of the molecular layers. A high current polarization (CP > 90%) and magnetoresistance (MR > 100%) at small bias can be attained using C70 layers. In contrast, the current polarization and the magnetoresistance at small bias are vanishingly small for C60 layers. Exploiting a generalized Julli`ere model we can trace the differences in spin-dependent transport between C60 and C70 layers to differences between the molecule-metal interface states. These states also allow one to interpret the current polarization and the magnetoresistance as a function of the applied bias voltage.

cond-mat.mes-hall↗

arXiv2014

From spin-polarized interfaces to giant magnetoresistance in organic spin valves

We calculate the spin-polarized electronic transport through a molecular bilayer spin valve from first principles, and establish the link between the magnetoresistance and the spin-dependent inter- actions at the metal-molecule interfaces. The magnetoresistance of a Fe|bilayer-C70|Fe spin valve attains a high value of 70% in the linear response regime, but it drops sharply as a function of the applied bias. The current polarization has a value of 80% in linear response, and also decreases as a function of bias. Both these trends can be modelled in terms of prominent spin-dependent Fe|C70 interface states close to the Fermi level, unfolding the potential of spinterface science to control and optimize spin currents.

cond-mat.mes-hall↗